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1200V|10A
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DIODE GEN PURP 1.2KV 10A TO220AC
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- TO-220-2
- Packaging
- —
- Weight
- —
Total Inventory
488pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 10ETF12 from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1200V | |
| Current - Average Rectified (Io) | 10A | |
| Voltage - Forward (Vf) (Max) @ If | 1.33V @ 10A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 310ns | |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220AC | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Datasheet & Documents
10etf12.pdf
PDF Document · 9 pages
