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1000V|10A
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DIODE GEN PURP 1KV 10A D2PAK
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Packaging
- —
- Weight
- —
Total Inventory
233pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 10ETF10S from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1000V | |
| Current - Average Rectified (Io) | 10A | |
| Voltage - Forward (Vf) (Max) @ If | 1.33V @ 10A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 310ns | |
| Current - Reverse Leakage @ Vr | 100µA @ 1000V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | TO-263AB (D²PAK) | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Datasheet & Documents
10etf12s.pdf
PDF Document · 7 pages
