页 193 - Vishay Semiconductor Diodes Division 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

Vishay Semiconductor Diodes Division 产品 - 二极管 - 整流器 - 单

记录 10,373
页  193/346
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
MBRB1090-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,808
90V
10A
800mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
FESB8JTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,936
600V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
FESB8HTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,456
500V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 500V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
FESB8GTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,984
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
FESB8FTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,848
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
UGB8GTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,208
400V
8A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
UGB8FTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,600
300V
8A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
GIB1404HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,224
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
GIB1403HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,840
150V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
GIB1402HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,432
100V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
GIB1401HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,040
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
MI3035S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 30A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-220-3
库存6,240
35V
30A
700mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
-
Through Hole
TO-220-3
TO-220AB
-65°C ~ 150°C
BYV29B-400HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,072
400V
8A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
BYV29B-300HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,120
300V
8A
1.25V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
VS-MURB1520-1PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 15A TO262

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存7,440
200V
15A
1.05V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
10µA @ 200V
-
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
-65°C ~ 175°C
hot V10P20-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 2.4A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.34V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存90,000
200V
2.4A
1.34V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 200V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
VB30120S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,496
120V
30A
1.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
V30120SGHM3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V TO-220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-3
库存7,120
120V
30A
1.28V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Through Hole
TO-220-3
TO-220AB
-40°C ~ 150°C
VS-10ETS08S-M3
Vishay Semiconductor Diodes Division

DIODE RECT 800V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,256
800V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
VS-HFA04SD60STR-M3
Vishay Semiconductor Diodes Division

DIODE HEXFRED 4A 600V DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,528
600V
4A
1.8V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
3µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-55°C ~ 150°C
VS-HFA04SD60SR-M3
Vishay Semiconductor Diodes Division

DIODE HEXFRED 4A 600V DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,096
600V
4A
1.8V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
3µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-65°C ~ 175°C
VS-HFA04SD60SL-M3
Vishay Semiconductor Diodes Division

DIODE HEXFRED 4A 600V DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42ns
  • Current - Reverse Leakage @ Vr: 3µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,248
600V
4A
1.8V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
3µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
-65°C ~ 175°C
VS-19TQ015S-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 19A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 19A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 19A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10.5mA @ 15V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,688
15V
19A
360mV @ 19A
Fast Recovery =< 500ns, > 200mA (Io)
-
10.5mA @ 15V
2000pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 125°C
VS-10ETS12S-M3
Vishay Semiconductor Diodes Division

DIODE RECT 1200V 10A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,160
1200V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 150°C
UGB8DTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,248
200V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
UGB8CTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,008
150V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
hot UGB8BTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存18,852
100V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
UGB8ATHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,160
50V
8A
1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 50V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
FESB8CTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,472
150V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C
FESB8BTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,056
100V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-55°C ~ 150°C