页 167 - Vishay Semiconductor Diodes Division 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Vishay Semiconductor Diodes Division 产品 - 二极管 - 整流器 - 单

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制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BYW172F-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存4,320
300V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 300V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYV98-100-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 4A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存3,552
100V
4A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW172F-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存2,896
300V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 300V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYV98-100-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 4A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存3,232
100V
4A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
VS-30BQ040-M3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3.0A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 230pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AB, SMC
库存3,328
40V
3A
530mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
230pF @ 5V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-55°C ~ 150°C
VFT760-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 7.5A 60V ITO-220A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2 Full Pack, Isolated Tab
库存2,384
60V
7.5A
800mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
SS15P3S-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 200°C (Max)
封装: TO-277, 3-PowerDFN
库存2,032
30V
15A
570mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
200°C (Max)
V12P12HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存3,248
120V
3.9A
830mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
VT760-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 7.5A 60V TO-220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2
库存6,432
60V
7.5A
800mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
AU3PG-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存7,648
400V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PD-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存2,944
200V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU3PJ-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存5,264
600V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SS10P4HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 40V
  • Capacitance @ Vr, F: 750pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存7,440
40V
10A
560mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 40V
750pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
SS10P3HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 30V
  • Capacitance @ Vr, F: 750pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存5,984
30V
10A
560mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 30V
750pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
V12P10HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存6,080
120V
3.9A
830mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
V15PN50-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存6,576
50V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
AS3PMHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCH 1KV 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存5,152
1000V
2.1A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.2µs
10µA @ 1000V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS3PKHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存5,392
800V
2.1A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.2µs
10µA @ 800V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS3PJHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存7,392
600V
2.1A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.2µs
10µA @ 600V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS3PGHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存6,368
400V
2.1A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.2µs
10µA @ 400V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS3PDHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存4,416
200V
2.1A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.2µs
10µA @ 200V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SF5402-TR
Vishay Semiconductor Diodes Division

DIODE AVAL 3A 200V SOD-64

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存7,840
200V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
SF5402-TAP
Vishay Semiconductor Diodes Division

DIODE AVAL 3A 200V SOD-64

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存3,344
200V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW76TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存7,504
600V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW172D-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存3,760
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 200V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYV98-50-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 4A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存2,592
50V
4A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW86TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存5,952
1000V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 800V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYW76TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存4,912
600V
3A
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 600V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
hot BYW172D-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存600,000
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
1µA @ 200V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
BYV98-50-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 4A SOD64

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-64, Axial
  • Supplier Device Package: SOD-64
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-64, Axial
库存6,112
50V
4A
1.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
-
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C