页 155 - Vishay Semiconductor Diodes Division 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Vishay Semiconductor Diodes Division 产品 - 二极管 - 整流器 - 单

记录 10,373
页  155/346
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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GI754-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: P600, Axial
库存3,136
400V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 400V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
GI752-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: P600, Axial
库存7,920
200V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 200V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
GI751-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: P600, Axial
库存6,592
100V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 100V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
P600A-E3/73
Vishay Semiconductor Diodes Division

DIODE RECT 6A 50V P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: P600, Axial
库存2,272
50V
6A
900mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 50V
150pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
MURS360HE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 3V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存5,008
600V
3A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 3V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
MURS340HE3_A/I
Vishay Semiconductor Diodes Division

DIODE UFAST 400V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 3V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存2,512
400V
3A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 3V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
hot MURS360-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存192,000
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
MURS340-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存7,248
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
AU2PG-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存5,024
400V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PJ-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存5,840
600V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AU2PD-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.6A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 42pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存7,392
200V
1.6A (DC)
1.9V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
42pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PM-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.4A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存7,344
1000V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PK-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存4,688
800V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SS8P3LHM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 8A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 30V
  • Capacitance @ Vr, F: 330pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存3,728
30V
8A
570mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
330pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
SS34HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-214AB, SMC
库存4,928
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SS33HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-214AB, SMC
库存7,264
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SS32HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-214AB, SMC
库存6,848
20V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SSC53L-M3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 30V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AB, SMC
库存4,800
30V
5A
450mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 150°C
SSC53L-M3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 30V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AB, SMC
库存2,304
30V
5A
450mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
700µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 150°C
SSC54HE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AB, SMC
库存3,696
40V
5A
490mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
10pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 150°C
AS3PD-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存7,984
200V
2.1A (DC)
920mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
10µA @ 200V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS3PJ-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.1A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存6,192
600V
2.1A (DC)
920mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
10µA @ 600V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SGL41-60HE3/96
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-213AB, MELF
库存3,104
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 150°C
SGL41-50HE3/96
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-213AB, MELF
库存3,808
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 150°C
SB5H90-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-201AD, Axial
库存7,536
90V
5A
800mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 90V
-
Through Hole
DO-201AD, Axial
DO-201AD
175°C (Max)
SB5H100-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-201AD, Axial
库存7,408
100V
5A
800mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
175°C (Max)
AS4PJ-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存6,960
600V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PG-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存5,952
400V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS4PD-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.4A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存3,264
200V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
AS3PM-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 2.1A TO277

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 2.1A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: 37pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存3,200
1000V
2.1A (DC)
920mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
10µA @ 1000V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C