Rohm Semiconductor 产品

R6007ENX

Rohm Semiconductor

MOSFET N-CH 600V 7A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-2 Full Pack

封装: TO-220-2 Full Pack

2SD1763AE

Rohm Semiconductor

TRANS NPN 160V 1.5A TO220FP

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 160V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封装: TO-220-3 Full Pack

DTC143ZUBTL

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-85
• Supplier Device Package: UMT3F

封装: SC-85

DTC114YEBTL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-89, SOT-490
• Supplier Device Package: EMT3F (SOT-416FL)

封装: SC-89, SOT-490

EMH6T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

封装: SOT-563, SOT-666

CDZT2R12B

Rohm Semiconductor

DIODE ZENER 12V 100MW VMN2

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 100mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: VMN2

封装: SOD-923

BU9795AKV-E2

Rohm Semiconductor

IC LCD DVR MULTI 35X4COM 48-VQFP

• Display Type: LCD
• Configuration: 140 Segment
• Interface: 3-Wire Serial
• Digits or Characters: -
• Current - Supply: 20µA
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-VQFP

封装: 48-LQFP

SML-012P8TT86

Rohm Semiconductor

LED GREEN CLEAR 1208 SMD

• Color: Green
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 6.3mcd
• Lens Style/Size: Rectangle with Flat Top, 2.30mm x 1.60mm
• Voltage - Forward (Vf) (Typ): 2.2V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 560nm
• Wavelength - Peak: -
• Features: -
• Package / Case: 1208 (3020 Metric)
• Supplier Device Package: 3020(1208)
• Size / Dimension: 3.00mm L x 2.00mm W
• Height (Max): 1.50mm

封装: 1208 (3020 Metric)

SML-210LTT86

Rohm Semiconductor

LED RED CLEAR 0805 SMD

• Color: Red
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 10mcd
• Lens Style/Size: Rectangle with Flat Top, 1.40mm x 1.25mm
• Voltage - Forward (Vf) (Typ): 1.75V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: -
• Wavelength - Peak: 660nm
• Features: -
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 2012(0805)
• Size / Dimension: 2.00mm L x 1.25mm W
• Height (Max): 0.90mm

封装: 0805 (2012 Metric)

MCR006YRTJ130

Rohm Semiconductor

RES SMD 13 OHM 5% 1/20W 0201

• Resistance: 13 Ohms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

MCR01MRTF10R0

Rohm Semiconductor

RES SMD 10 OHM 1% 1/16W 0402

• Resistance: 10 Ohms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0402 (1005 Metric)

MCR100JZHJLR10

Rohm Semiconductor

RES SMD 0.1 OHM 5% 1W 2512

• Resistance: 100 mOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: 200/ +600ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2512 (6432 Metric)

MCR10EZPF6800

Rohm Semiconductor

RES SMD 680 OHM 1% 1/8W 0805

• Resistance: 680 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZPF1131

Rohm Semiconductor

RES SMD 1.13K OHM 1% 1/8W 0805

• Resistance: 1.13 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZHF3903

Rohm Semiconductor

RES SMD 390K OHM 1% 1/8W 0805

• Resistance: 390 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR03EZPJ221

Rohm Semiconductor

RES SMD 220 OHM 5% 1/4W 0603

• Resistance: 220 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR10ERTJ165

Rohm Semiconductor

RES SMD 1.6M OHM 5% 1/8W 0805

• Resistance: 1.6 MOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

KTR18EZPF1650

Rohm Semiconductor

RES SMD 165 OHM 1% 1/4W 1206

• Resistance: 165 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

ESR10EZPJ3R6

Rohm Semiconductor

RES SMD 3.6 OHM 5% 0.4W 0805

• Resistance: 3.6 Ohms
• Tolerance: ±5%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR03ERTF1470

Rohm Semiconductor

RES SMD 147 OHM 1% 1/10W 0603

• Resistance: 147 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR50JZHFLR470

Rohm Semiconductor

RES SMD 0.47 OHM 1% 1/2W 2010

• Resistance: 470 mOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR25JZHF2262

Rohm Semiconductor

RES SMD 22.6K OHM 1% 1/4W 1210

• Resistance: 22.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

KTR25JZPF91R0

Rohm Semiconductor

RES SMD 91 OHM 1% 1/3W 1210

• Resistance: 91 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

LMR934FJ-GE2

Rohm Semiconductor

LOW POWER INPUT-OUTPUT FULL SWIN

• Amplifier Type: General Purpose
• Number of Circuits: 4
• Output Type: -
• Slew Rate: 0.35 V/µs
• Gain Bandwidth Product: 1.4MHz
• -3db Bandwidth: -
• Current - Input Bias: 5nA
• Voltage - Input Offset: 1mV
• Current - Supply: 280µA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

封装: 8-SOIC (0.154", 3.90mm Width)

DTC143TU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

封装: -

R6530KNX3C16

Rohm Semiconductor

MOSFET N-CH 650V 30A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 960µA
• Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 307W (Tc)
• Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: -

PTZTFTE252-0B

Rohm Semiconductor

DIODE ZENER 2.12V 1W PMDS

• Voltage - Zener (Nom) (Vz): 2.12 V
• Tolerance: ±5.66%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 200 µA @ 500 mV
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS

封装: -

RB168VWM-60TFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: PMDE
• Operating Temperature - Junction: 175°C

封装: -

RB480Y-40FHT2R

Rohm Semiconductor

DIODE ARR SCHOTT 40V 200MA EMD4

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 40 V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75-4, SOT-543
• Supplier Device Package: EMD4

封装: -

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RUF025N02FRATL

Rohm Semiconductor

MOSFET N-CH 20V 2.5A TUMT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT3
• Package / Case: 3-SMD, Flat Leads

封装: -