Rohm Semiconductor 产品

IMD3AT108

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SMT6

封装: SC-74, SOT-457

BD6210F-E2

Rohm Semiconductor

IC MOTOR DRIVER PAR 8SOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: On/Off
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Media Player
• Current - Output: 500mA
• Voltage - Supply: 3 V ~ 5.5 V
• Voltage - Load: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

LM324PWR

Rohm Semiconductor

IC OPAMP GP 1.2MHZ 14TSSOP

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 0.5 V/µs
• Gain Bandwidth Product: 1.2MHz
• -3db Bandwidth: -
• Current - Input Bias: 250nA
• Voltage - Input Offset: -
• Current - Supply: 700µA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/Dual (±): 3 V ~ 32 V, ±1.5 V ~ 16 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

封装: 14-TSSOP (0.173", 4.40mm Width)

BU6929FV-E2

Rohm Semiconductor

IC VOICE SYNTH SER FLASH 28SSOP

• Function: -
• Applications: -
• Number of Channels: -
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Specifications: -
• Package / Case: 28-LSSOP (0.220", 5.60mm Width)
• Supplier Device Package: 28-SSOPB

封装: 28-LSSOP (0.220", 5.60mm Width)

MNR14ERAPJ3R0

Rohm Semiconductor

RES ARRAY 4 RES 3 OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 3
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±500ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

封装: 1206 (3216 Metric), Convex, Long Side Terminals

MNR14E0APJ683

Rohm Semiconductor

RES ARRAY 4 RES 68K OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 68k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

封装: 1206 (3216 Metric), Convex, Long Side Terminals

MCR50JZHF2941

Rohm Semiconductor

RES SMD 2.94K OHM 1% 1/2W 2010

• Resistance: 2.94 kOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR10EZPF2552

Rohm Semiconductor

RES SMD 25.5K OHM 1% 1/8W 0805

• Resistance: 25.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR50JZHJLR15

Rohm Semiconductor

RES SMD 0.15 OHM 5% 1/2W 2010

• Resistance: 150 mOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR10EZPF2372

Rohm Semiconductor

RES SMD 23.7K OHM 1% 1/8W 0805

• Resistance: 23.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR006YZPJ434

Rohm Semiconductor

RES SMD 430K OHM 5% 1/20W 0201

• Resistance: 430 kOhms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0201 (0603 Metric)

MCR10EZHJ304

Rohm Semiconductor

RES SMD 300K OHM 5% 1/8W 0805

• Resistance: 300 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZHJ184

Rohm Semiconductor

RES SMD 180K OHM 5% 1/8W 0805

• Resistance: 180 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZHF6651

Rohm Semiconductor

RES SMD 6.65K OHM 1% 1/8W 0805

• Resistance: 6.65 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZHF1583

Rohm Semiconductor

RES SMD 158K OHM 1% 1/8W 0805

• Resistance: 158 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR18EZPJ111

Rohm Semiconductor

RES SMD 110 OHM 5% 1/3W 1206

• Resistance: 110 Ohms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

KTR03EZPJ165

Rohm Semiconductor

RES SMD 1.6M OHM 5% 1/10W 0603

• Resistance: 1.6 MOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR10EZHF1272

Rohm Semiconductor

RES SMD 12.7K OHM 1% 1/8W 0805

• Resistance: 12.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR18ERTF5112

Rohm Semiconductor

RES SMD 51.1K OHM 1% 1/4W 1206

• Resistance: 51.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18ERTF6192

Rohm Semiconductor

RES SMD 61.9K OHM 1% 1/4W 1206

• Resistance: 61.9 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

SCS215AGC17

Rohm Semiconductor

DIODE SIC 650V 15A TO220ACFP

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 300 µA @ 600 V
• Capacitance @ Vr, F: 550pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220ACFP
• Operating Temperature - Junction: 175°C

封装: -

R8005ANJGTL

Rohm Semiconductor

NCH 800V 5A POWER MOSFET : R8005

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263S
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

2SC4081U3T106R

Rohm Semiconductor

TRANS NPN 50V 0.15A UMT3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 200 mW
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

封装: -

RB400VAM-50TR

Rohm Semiconductor

DIODE SCHOTTKY 50V 500MA TUMD2M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Capacitance @ Vr, F: 130pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M
• Operating Temperature - Junction: 150°C (Max)

封装: -

RB050LA-407HETR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDT
• Operating Temperature - Junction: 150°C

封装: -

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BD25HA5VEFJ-ME2

Rohm Semiconductor

500MA 2.5V, FIXED OUTPUT, HIGH-A

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 8V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.2V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): 1.2 mA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable, Soft Start
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

封装: -

BR24G512FJ-5AE2

Rohm Semiconductor

512K BIT, IC BUS, HIGH SPEED WRI

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 512Kbit
• Memory Interface: I2C
• Clock Frequency: 1 MHz
• Write Cycle Time - Word, Page: 3.5ms
• Access Time: -
• Voltage - Supply: 1.6V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

封装: -

RB078RSM10STFTL1

Rohm Semiconductor

100V 5A, TO-277GE, ULTRA LOW IR

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 175°C

封装: -

RQ3L070BGTB1

Rohm Semiconductor

NCH 60V 20A, HSMT8G, POWER MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 15W (Tc)
• Rds On (Max) @ Id, Vgs: 24.7mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSMT (3.2x3)
• Package / Case: 8-PowerVDFN

封装: -

R6020JNZ4C13

Rohm Semiconductor

MOSFET N-CH 600V 20A TO247G

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 7V @ 3.5mA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 252W (Tc)
• Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247G
• Package / Case: TO-247-3

封装: -