Rohm Semiconductor 产品

US6U37TR

Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT6
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

2SCR514PT100

Rohm Semiconductor

TRANS NPN 80V 0.7A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 700mA
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 300mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 2W
• Frequency - Transition: 320MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: MPT3

封装: TO-243AA

CDZVT2R6.2B

Rohm Semiconductor

DIODE ZENER 6.2V 100MW VMN2M

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: -
• Power - Max: 100mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: VMN2M

封装: 2-SMD, Flat Lead

BD4840FVE-TR

Rohm Semiconductor

IC DETECTOR VOLT 4.0V ODRN 5VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

封装: SOT-665

BR25L010FJ-WE2

Rohm Semiconductor

IC EEPROM 1KBIT 5MHZ 8SOP-J

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (128 x 8)
• Memory Interface: SPI
• Clock Frequency: 5MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

封装: 8-SOIC (0.154", 3.90mm Width)

MNR15E0RPJ512

Rohm Semiconductor

RES ARRAY 8 RES 5.1K OHM 1206

• Circuit Type: Bussed
• Resistance (Ohms): 5.1k
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 10
• Power Per Element: 31mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

封装: 1206 (3216 Metric), Convex, Long Side Terminals

MCR25JZHF17R4

Rohm Semiconductor

RES SMD 17.4 OHM 1% 1/4W 1210

• Resistance: 17.4 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

MCR10EZPF5903

Rohm Semiconductor

RES SMD 590K OHM 1% 1/8W 0805

• Resistance: 590 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR25JZHFL1R50

Rohm Semiconductor

RES SMD 1.5 OHM 1% 1/2W 1210

• Resistance: 1.5 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1210 (3225 Metric)

MCR10EZPF1622

Rohm Semiconductor

RES SMD 16.2K OHM 1% 1/8W 0805

• Resistance: 16.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR18EZHF69R8

Rohm Semiconductor

RES SMD 69.8 OHM 1% 1/4W 1206

• Resistance: 69.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

ESR10EZPF2101

Rohm Semiconductor

RES SMD 2.1K OHM 1% 0.4W 0805

• Resistance: 2.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

ESR18EZPF5101

Rohm Semiconductor

RES SMD 5.1K OHM 1% 1/3W 1206

• Resistance: 5.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18EZHF40R2

Rohm Semiconductor

RES SMD 40.2 OHM 1% 1/4W 1206

• Resistance: 40.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR18ERTF66R5

Rohm Semiconductor

RES SMD 66.5 OHM 1% 1/4W 1206

• Resistance: 66.5 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR03ERTJ242

Rohm Semiconductor

RES SMD 2.4K OHM 5% 1/10W 0603

• Resistance: 2.4 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR50JZHF1003

Rohm Semiconductor

RES SMD 100K OHM 1% 1/2W 2010

• Resistance: 100 kOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2010 (5025 Metric)

MCR100JZHF3092

Rohm Semiconductor

RES SMD 30.9K OHM 1% 1W 2512

• Resistance: 30.9 kOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 2512 (6432 Metric)

LTR10EVHFLR200

Rohm Semiconductor

RES SMD 0.2 OHM 1/2W 0805 WIDE

• Resistance: 200 mOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±150ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 0805 (2012 Metric), 0508
• Supplier Device Package: 0805
• Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: Wide 0805 (2012 Metric), 0508

BA4580YFVM-MGTR

Rohm Semiconductor

LOW NOISE GRAND SENSE OPERATIONA

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 5 V/µs
• Gain Bandwidth Product: 10MHz
• -3db Bandwidth: -
• Current - Input Bias: 100nA
• Voltage - Input Offset: 300µV
• Current - Supply: 6mA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 4 V ~ 32 V, ±2 V ~ 16 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-MSOP

封装: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

BD2245G-MGTR

Rohm Semiconductor

PWR MGMT LINEAR REGULATOR

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.8V ~ 5.5V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.7A
• Rds On (Typ): 100mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SOT-23-6
• Supplier Device Package: 6-SSOP

封装: SOT-23-6

BD53E34G-TR

Rohm Semiconductor

PWR MGMT SUPERVISORY

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 3.4V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

封装: SC-74A, SOT-753

RBQ20BGE65ATL

Rohm Semiconductor

DIODE ARR SCHOTT 65V 20A TO252GE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 65 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 65 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE

封装: -

BD63015EFV-E2

Rohm Semiconductor

BD63015EFV IS A THREE PHASE SINU

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Speed
• Output Configuration: Half Bridge (3)
• Interface: Logic
• Technology: DMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 1.5A
• Voltage - Supply: 8V ~ 28V
• Voltage - Load: 8V ~ 28V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 20-HTSSOP-B

封装: -

BD60GA3VEFJ-ME2

Rohm Semiconductor

300MA 6V, FIXED OUTPUT, HIGH-ACC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 14V
• Voltage - Output (Min/Fixed): 6V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.2V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 1.2 mA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable, Soft Start
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

封装: -

RB530CM-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 100MA VMN2M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 nA @ 10 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: VMN2M (SOD-923)
• Operating Temperature - Junction: 150°C (Max)

封装: -

RF202LAM2STFTR

Rohm Semiconductor

DIODE GEN PURP 200V 2A PMDTM

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

封装: -

RB088BM200TL

Rohm Semiconductor

DIODE ARR SCHOTT 200V 10A TO252

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 7 µA @ 200 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

封装: -

R6027YNZ4C13

Rohm Semiconductor

NCH 600V 27A, TO-247G, POWER MOS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
• Vgs(th) (Max) @ Id: 6V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 245W (Tc)
• Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247G
• Package / Case: TO-247-3

封装: -

RFUH10NS4SFHTL

Rohm Semiconductor

DIODE GEN PURP 430V 10A LPDS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 430 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 430 V
• Capacitance @ Vr, F: 150pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: LPDS
• Operating Temperature - Junction: 150°C (Max)

封装: -

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