Rohm Semiconductor 产品

QS5U26TR

Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT5
• Package / Case: SOT-23-5 Thin, TSOT-23-5

封装: SOT-23-5 Thin, TSOT-23-5

EDZVT2R3.6B

Rohm Semiconductor

DIODE ZENER 3.6V 150MW EMD2

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±3%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2

封装: SC-79, SOD-523

RB201A60T-31

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A MSR

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-41 Mini, Axial
• Supplier Device Package: MSR
• Operating Temperature - Junction: 150°C (Max)

封装: DO-41 Mini, Axial

RLS-73TE-11

Rohm Semiconductor

DIODE GEN PURP 80V 130MA LLDS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 130mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: LLDS
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AC, MINI-MELF, SOD-80

RBE1VAM20ATR

Rohm Semiconductor

DIODE SCHOTTKY 20V 1A TUMD2M

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2M
• Operating Temperature - Junction: 125°C (Max)

封装: 2-SMD, Flat Lead

RSX201L-30TE25

Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C (Max)

封装: DO-214AC, SMA

BA17808T

Rohm Semiconductor

IC REG LINEAR 8V 1A TO220FP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 23V
• Voltage - Output (Min/Fixed): 8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 2V @ 1A (Typ)
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 4.5mA ~ 6mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封装: TO-220-3 Full Pack

BD9890F-E2

Rohm Semiconductor

IC INVERTER CONTROL SOP28

• Applications: LCD Display
• Current - Supply: 11mA
• Voltage - Supply: 5 V ~ 14 V
• Operating Temperature: -40°C ~ 90°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOP

封装: 28-SOIC (0.295", 7.50mm Width)

RPM6940-V4

Rohm Semiconductor

RECEIVER REMOTE 40KHZ RSIP-A3 V4

• Sensing Distance: 16m
• B.P.F. Center Frequency: 40.0kHz
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply: 1.5mA
• Orientation: Side View
• Mounting Type: Through Hole
• Operating Temperature: -30°C ~ 100°C (TA)

封装: -

MCR004YZPF7502

Rohm Semiconductor

RES SMD 75K OHM 1% 1/32W 01005

• Resistance: 75 kOhms
• Tolerance: ±1%
• Power (Watts): 0.03W, 1/32W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 01005 (0402 Metric)
• Supplier Device Package: 01005
• Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
• Height - Seated (Max): 0.006" (0.15mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 01005 (0402 Metric)

MCR004YZPF1502

Rohm Semiconductor

RES SMD 15K OHM 1% 1/32W 01005

• Resistance: 15 kOhms
• Tolerance: ±1%
• Power (Watts): 0.03W, 1/32W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 01005 (0402 Metric)
• Supplier Device Package: 01005
• Size / Dimension: 0.016" L x 0.008" W (0.40mm x 0.20mm)
• Height - Seated (Max): 0.006" (0.15mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 01005 (0402 Metric)

MCR10EZPF4023

Rohm Semiconductor

RES SMD 402K OHM 1% 1/8W 0805

• Resistance: 402 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR18EZPF3902

Rohm Semiconductor

RES SMD 39K OHM 1% 1/4W 1206

• Resistance: 39 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

MCR10EZPJ272

Rohm Semiconductor

RES SMD 2.7K OHM 5% 1/8W 0805

• Resistance: 2.7 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR10EZHF8202

Rohm Semiconductor

RES SMD 82K OHM 1% 1/8W 0805

• Resistance: 82 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR03EZPFX6191

Rohm Semiconductor

RES SMD 6.19K OHM 1% 1/10W 0603

• Resistance: 6.19 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR01MZPJ562

Rohm Semiconductor

RES SMD 5.6K OHM 5% 1/16W 0402

• Resistance: 5.6 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0402 (1005 Metric)

UCR10EVHFSR027

Rohm Semiconductor

RES SMD 0.027 OHM 1% 1/3W 0805

• Resistance: 27 mOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: 0/ +250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

KTR10EZPF78R7

Rohm Semiconductor

RES SMD 78.7 OHM 1% 1/8W 0805

• Resistance: 78.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

KTR03EZPJ135

Rohm Semiconductor

RES SMD 1.3M OHM 5% 1/10W 0603

• Resistance: 1.3 MOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

ESR03EZPF6800

Rohm Semiconductor

RES SMD 680 OHM 1% 1/4W 0603

• Resistance: 680 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0603 (1608 Metric)

MCR10ERTF9091

Rohm Semiconductor

RES SMD 9.09K OHM 1% 1/8W 0805

• Resistance: 9.09 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 0805 (2012 Metric)

MCR18ERTF9310

Rohm Semiconductor

RES SMD 931 OHM 1% 1/4W 1206

• Resistance: 931 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

封装: 1206 (3216 Metric)

BR25H256F-2ACE2

Rohm Semiconductor

IC EEPROM 256K SPI 10MHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256Kb (32K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 4ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

RJ1G08CGNTLL

Rohm Semiconductor

MOSFET N-CH 40V 80A LPTL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LPTL
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

PDZVTR33B

Rohm Semiconductor

DIODE ZENER 35V 1W PMDTM

• Voltage - Zener (Nom) (Vz): 35 V
• Tolerance: ±5.71%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 25 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM

封装: -

SCS240KE2GC11

Rohm Semiconductor

DIODE ARR SIC 1200V 20A TO247N

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io) (per Diode): 20A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
• Operating Temperature - Junction: 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封装: -

RFN1L7SDDTE25

Rohm Semiconductor

DIODE GEN PURP 700V 800MA PMDS

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 700 V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 700 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS
• Operating Temperature - Junction: 150°C

封装: -

BM63573S-VA

Rohm Semiconductor

600V IGBT INTELLIGENT POWER MODU

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 10 A
• Voltage: 600 V
• Voltage - Isolation: 1500Vrms
• Package / Case: 25-PowerDIP Module (1.134", 28.80mm)

封装: -

BD50FD0WHFP-TR

Rohm Semiconductor

2A 5V, FIXED OUTPUT, HIGH-ACCURA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 32V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.55V @ 1A
• Current - Output: 2A
• Current - Quiescent (Iq): 1 mA
• Current - Supply (Max): -
• PSRR: 55dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: HRP-5 (5 Leads + Tab)
• Supplier Device Package: HRP-5

封装: -