页 24 - Rohm Semiconductor 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-83210559
登入/注册
BOM
购物车 0

Rohm Semiconductor 产品 - 二极管 - 整流器 - 单

记录 1,270
页  24/43
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RFN20NS3SFHTL
Rohm Semiconductor

DIODE GEN PURP 350V 20A LPDS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 350 V
  • Capacitance @ Vr, F: 412pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存921
350 V
20A
1.35 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 350 V
412pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
LPDS
150°C (Max)
YQ20BGE10SDTL
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252GE
  • Operating Temperature - Junction: 150°C
封装: -
库存7,500
100 V
20A
860 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252GE
150°C
SCS210AJHRTLL
Rohm Semiconductor

DIODE SIL CARB 650V 10A TO263AB

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 600 V
  • Capacitance @ Vr, F: 365pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 175°C (Max)
封装: -
库存2,853
650 V
10A
1.55 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 600 V
365pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
175°C (Max)
1SS4009HLTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBR3RSM40BTFTL1
Rohm Semiconductor

DIODE SCHOTTKY 40V 3A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
封装: -
库存12,000
40 V
3A
470 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
120 µA @ 40 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
BAS21VMTE-17
Rohm Semiconductor

DIODE GEN PURP 200V 200MA UMD2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 200 V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存16,533
200 V
200mA
1.25 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 200 V
2.5pF @ 0V, 1MHz
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
1SS400T9TE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RBQ10RSM10BTL1
Rohm Semiconductor

DIODE SCHOTTKY 100V 10A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A
  • Operating Temperature - Junction: 150°C
封装: -
库存8,373
100 V
10A
700 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A
150°C
RB521ZS-3AZT2R
Rohm Semiconductor

DIODE SCHOTTKY 100MA 8SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB530VM-40FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 690 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存19,398
40 V
100mA
690 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
15 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
150°C (Max)
1SS4008HQTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RF1005TF6SC9
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C
封装: -
库存8,946
600 V
10A
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C
RB751ZS-40T2R
Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA GMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 30mA
  • Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 30 V
  • Capacitance @ Vr, F: 1.4pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: GMD2
  • Operating Temperature - Junction: 125°C
封装: -
Request a Quote
30 V
30mA
370 mV @ 1 mA
Small Signal =< 200mA (Io), Any Speed
-
500 nA @ 30 V
1.4pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
GMD2
125°C
RFUH10TF6SC9
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C
封装: -
库存2,901
600 V
10A
2.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C
SCS315AHGC9
Rohm Semiconductor

DIODE SIL CARB 650V 15A TO220ACP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 75 µA @ 650 V
  • Capacitance @ Vr, F: 750pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACP
  • Operating Temperature - Junction: 175°C (Max)
封装: -
库存1,176
650 V
15A
-
No Recovery Time > 500mA (Io)
0 ns
75 µA @ 650 V
750pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACP
175°C (Max)
RFUH20TF6SC9
Rohm Semiconductor

DIODE GEN PURP 600V 20A TO220NFM

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220NFM
  • Operating Temperature - Junction: 150°C
封装: -
库存2,895
600 V
20A
2.8 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 600 V
-
Through Hole
TO-220-2 Full Pack
TO-220NFM
150°C
RB521S-30LDTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RB521VM-30FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 10 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
封装: -
库存40,563
30 V
200mA
470 mV @ 200 mA
Small Signal =< 200mA (Io), Any Speed
-
30 µA @ 10 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)
RFN5BM3SFHTL
Rohm Semiconductor

DIODE GEN PURP 350V 5A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 350 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存4,134
350 V
5A
1.5 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
10 µA @ 350 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)
RUP1301ZST2R
Rohm Semiconductor

DIODE STANDARD UMT

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SCS212AGC17
Rohm Semiconductor

DIODE SIC 650V 12A TO220ACFP

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 240 µA @ 600 V
  • Capacitance @ Vr, F: 438pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220ACFP
  • Operating Temperature - Junction: 175°C
封装: -
库存549
650 V
12A
1.55 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
240 µA @ 600 V
438pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220ACFP
175°C
SCS320AMC
Rohm Semiconductor

DIODE SIL CARB 650V 20A TO220FM

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FM
  • Operating Temperature - Junction: 175°C (Max)
封装: -
库存1,494
650 V
20A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
1000pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220FM
175°C (Max)
RB078BM30SFHHTL
Rohm Semiconductor

30V 5A, TO-252, ULTRA LOW IR SBD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 175°C
封装: -
库存7,500
30 V
5A
720 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 µA @ 30 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
175°C
RB050LAM-60TFTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDTM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26.35 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDTM
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存47,712
60 V
3A
560 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
26.35 ns
100 µA @ 60 V
-
Surface Mount
SOD-128
PMDTM
150°C (Max)
RBR2MM60ATFTR
Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存10,401
60 V
2A
650 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
75 µA @ 60 V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
RSX301LA-30GTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 3A PMDT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 420 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: PMDT
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
30 V
3A
420 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Surface Mount
SOD-128
PMDT
150°C
RBR3L60ADDTE25
Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: PMDS
  • Operating Temperature - Junction: 150°C
封装: -
库存1,755
60 V
3A
660 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C
RB541VM-40FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 200MA UMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: UMD2
  • Operating Temperature - Junction: 125°C (Max)
封装: -
库存4,158
40 V
200mA
610 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
100 µA @ 40 V
-
Surface Mount
SC-90, SOD-323F
UMD2
125°C (Max)
RB751S-407HGTE61
Rohm Semiconductor

DIODE SCHOTTKY SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
RFN10BM6SFHTL
Rohm Semiconductor

DIODE GEN PURP 600V 10A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存7,104
600 V
10A
1.55 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)