ON Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

NTLUF4189NZTAG

ON Semiconductor

MOSFET N-CH 30V 1.2A 6UDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
• Vgs (Max): ±8V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFN (1.6x1.6)
• Package / Case: 6-UFDFN Exposed Pad

封装: 6-UFDFN Exposed Pad

NTMFS4C09NBT1G

ON Semiconductor

MOSFET N-CH 30V SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 760mW (Ta)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

封装: -

NTMFS4C09NAT1G

ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 760mW (Ta)
• Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

NTGS3433T1G

ON Semiconductor

MOSFET P-CH 12V 2.35A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 5V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6

封装: SOT-23-6

NTD4979N-35G

ON Semiconductor

MOSFET N-CH 30V 9.4A IPAK TRIMME

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

NTMD4184PFR2G

ON Semiconductor

MOSFET P-CH 30V 2.3A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 770mW (Ta)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

NTTFS4930NTWG

ON Semiconductor

MOSFET N-CH 30V 23A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

NTMFS4926NT3G

ON Semiconductor

MOSFET N-CH 30V 44A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

NTTFS4C13NTWG

ON Semiconductor

MOSFET N-CH 30V 38A U8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 780mW (Ta), 21.5W (Tc)
• Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

MCH6342-TL-H

ON Semiconductor

MOSFET P-CH 30V 4.5A MCPH6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 73 mOhm @ 2A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-MCPH
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

CPH6443-TL-H

ON Semiconductor

MOSFET N-CH 35V 6A CPH6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 35V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-CPH
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

NTMFS4C032NT3G

ON Semiconductor

MOSFET N-CH 30V SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.46W (Ta), 21.6W (Tc)
• Rds On (Max) @ Id, Vgs: 7.35 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

NTMFS4983NFT3G

ON Semiconductor

MOSFET N-CH 30V 160A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 38W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

NTHS5441T1G

ON Semiconductor

MOSFET P-CH 20V 3.9A CHIPFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: ChipFET?
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

NTD4909NA-35G

ON Semiconductor

MOSFET N-CH 30V 41A SGL IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 15V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Stub Leads, IPak

封装: TO-251-3 Stub Leads, IPak

NTMFS4C028NT3G

ON Semiconductor

MOSFET N-CH 30V SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
• Rds On (Max) @ Id, Vgs: 4.73 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

2SK536-TB-E

ON Semiconductor

MOSFET N-CH 50V 0.1A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 10V
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

NTNS3A92PZT5G

ON Semiconductor

MOSFET P-CH 20V SPCL XLLGA3

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NTNS3A91PZT5G

ON Semiconductor

MOSFET P-CH 20V 0.223A XLLGA3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 223mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 121mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-XLLGA (0.62x0.62)
• Package / Case: 3-XFLGA

封装: 3-XFLGA

NTTFS4939NTAG

ON Semiconductor

MOSFET N-CH 30V 8.9A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1979pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 850mW (Ta), 29.8W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

MCH6448-TL-W

ON Semiconductor

MOSFET N-CH 20V 8A MCPH6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 10V
• Vgs (Max): ±9V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-88FL/ MCPH6
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

MCH6436-TL-W

ON Semiconductor

MOSFET N-CH 30V 6A MCPH6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-88FL/ MCPH6
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

NVA4153NT1G

ON Semiconductor

MOSFET N-CH 20V 0.915A SC75

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75, SOT-416
• Package / Case: SC-75, SOT-416

封装: SC-75, SOT-416

MCH6421-TL-E

ON Semiconductor

MOSFET N-CH 20V 5.5A MCPH6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 2A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-MCPH
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

NTD4813NHT4G

ON Semiconductor

MOSFET N-CH 30V 40A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SVD14N03RT4G

ON Semiconductor

MOSFET N-CH 25V 14A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

EMH2801-TL-H

ON Semiconductor

MOSFET P-CH 20V 3A EMH8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
• Vgs (Max): ±10V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-EMH
• Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

PCP1405-TD-H

ON Semiconductor

MOSFET N-CH 250V 0.6A SOT89

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 300mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-89/PCP-1
• Package / Case: TO-243AA

封装: TO-243AA

MCH6431-TL-W

ON Semiconductor

MOSFET N-CH 30V 5A MCPH6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-88FL/ MCPH6
• Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

MCH3374-TL-E

ON Semiconductor

MOSFET P-CH 12V 3A MCPH3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70FL/MCPH3
• Package / Case: 3-SMD, Flat Leads

封装: 3-SMD, Flat Leads