Nexperia USA Inc. 产品

BUK9575-55A,127

Nexperia USA Inc.

MOSFET N-CH 55V 20A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 643pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 68 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

2PD601ASW,115

Nexperia USA Inc.

TRANS NPN 50V 0.1A SOT323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

封装: SC-70, SOT-323

BC847CW,115

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

封装: SC-70, SOT-323

PDTB114ETR

Nexperia USA Inc.

TRANS PREBIAS PNP 0.46W

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 140MHz
• Power - Max: 320mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

PBRN113ZT,215

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

PEMH2,115

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

BZT52-C12X

Nexperia USA Inc.

DIODE ZENER 12.05V 350MW SOD123

• Voltage - Zener (Nom) (Vz): 12.05V
• Tolerance: ±5.4%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

PDZ22B,115

Nexperia USA Inc.

DIODE ZENER 22V 400MW SOD323

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 17V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: SC-76, SOD-323

PMEG100V100ELPDZ

Nexperia USA Inc.

DIODE SCHOTTKY 100V 10A CFP15

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 14ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 135pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Leads
• Supplier Device Package: CFP15
• Operating Temperature - Junction: 175°C (Max)

封装: 3-SMD, Flat Leads

1PS70SB14F

Nexperia USA Inc.

1PS70SB14/SOT323/SC-70

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

BAT54L,315

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD882

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: DFN1006-2
• Operating Temperature - Junction: 150°C (Max)

封装: SOD-882

NPIC6C596BQ,115

Nexperia USA Inc.

IC SHIFT REGISTER 8BIT 16DHVQFN

• Logic Type: Shift Register
• Output Type: Open Drain
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Serial to Parallel, Serial
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DHVQFN (2.5x3.5)

封装: 16-VFQFN Exposed Pad

74AHC123ABQ-Q100X

Nexperia USA Inc.

IC MULTIVIBRATOR DUAL 16DHVQFN

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: No
• Propagation Delay: 5.1ns
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DHVQFN (2.5x3.5)

封装: 16-VFQFN Exposed Pad

74LVC04AD-Q100J

Nexperia USA Inc.

IC HEX INVERTER 14SOIC

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 1.2 V ~ 3.6 V
• Current - Quiescent (Max): 40µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.12 V ~ 0.8 V
• Logic Level - High: 1.08 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 4.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

封装: 14-SOIC (0.154", 3.90mm Width)

74HCT1G00GV,125

Nexperia USA Inc.

IC GATE NAND 1CH 2-INP 5-TSOP

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 20µA
• Current - Output High, Low: 2mA, 2mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 12ns @ 4.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 5-TSOP
• Package / Case: SC-74A, SOT-753

封装: SC-74A, SOT-753

HEF4069UBT,652

Nexperia USA Inc.

IC INVERTER HEX UNBUFFER 14-SOIC

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 3 V ~ 15 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1 V ~ 2.5 V
• Logic Level - High: 4 V ~ 12.5 V
• Max Propagation Delay @ V, Max CL: 30ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

封装: 14-SOIC (0.154", 3.90mm Width)

74AHC2G00DP,125

Nexperia USA Inc.

IC GATE NAND 2CH 2-INP 8-TSSOP

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 10µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 1.65 V
• Logic Level - High: 1.5 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

74ALVC02BQ,115

Nexperia USA Inc.

IC GATE NOR 4CH 2-INP 14-DHVQFN

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 3.6 V
• Current - Quiescent (Max): 20µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 2.2ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-DHVQFN (2.5x3)
• Package / Case: 14-VFQFN Exposed Pad

封装: 14-VFQFN Exposed Pad

74VHC541PW-Q100J

Nexperia USA Inc.

IC BUFFER/LINE DVR OCT 20TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

74HCT4852BQ,115

Nexperia USA Inc.

IC MUX 4:1 195 OHM 16DHVQFN

• Switch Circuit: SP4T
• Multiplexer/Demultiplexer Circuit: 4:1
• Number of Circuits: 2
• On-State Resistance (Max): 210 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 25ns, 80ns
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 10pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-VFQFN Exposed Pad
• Supplier Device Package: 16-DHVQFN (2.5x3.5)

封装: 16-VFQFN Exposed Pad

74AHCV541APWJ

Nexperia USA Inc.

74AHCV541APW/SOT360/TSSOP20

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: Schmitt Trigger
• Output Type: 3-State
• Current - Output High, Low: 16mA, 16mA
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

74AUP2G07GF-115

Nexperia USA Inc.

NEXPERIA 74AUP2G07GF - BUFFER, A

• Logic Type: -
• Number of Elements: -
• Number of Bits per Element: -
• Input Type: -
• Output Type: -
• Current - Output High, Low: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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PDTD113ZT-QVL

Nexperia USA Inc.

TRANS PREBIAS NPN 50V TO236AB

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 1 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 250 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封装: -

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PMEG045V100EPE-QZ

Nexperia USA Inc.

DIODE SCHOTTKY 45V 10A CFP15B

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 36 ns
• Current - Reverse Leakage @ Vr: 600 µA @ 45 V
• Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

封装: -

XS3A4052PWJ

Nexperia USA Inc.

IC SWITCH DP4TX1 900MOHM 16TSSOP

• Switch Circuit: DP4T
• Multiplexer/Demultiplexer Circuit: 4:1
• Number of Circuits: 1
• On-State Resistance (Max): 900mOhm
• Channel-to-Channel Matching (ΔRon): 130mOhm (Max)
• Voltage - Supply, Single (V+): 1.4V ~ 4.3V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 40ns, 20ns
• -3db Bandwidth: 25MHz
• Charge Injection: 15pC
• Channel Capacitance (CS(off), CD(off)): 35pF
• Current - Leakage (IS(off)) (Max): 10nA
• Crosstalk: -90dB @ 100kHz
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

封装: -

PZU5-6B1A-QX

Nexperia USA Inc.

PZU5.6B1A-Q/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 5.43 V
• Tolerance: ±2%
• Power - Max: 320 mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1 mA @ 2.5 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: -

BC817-40W-MIX

Nexperia USA Inc.

TRANS NPN 45V 0.5A SOT323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 200 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: -

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PSMNR70-40SSHJ

Nexperia USA Inc.

MOSFET N-CH 40V 425A LFPAK88

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 425A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 375W (Ta)
• Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK88 (SOT1235)
• Package / Case: SOT-1235

封装: -

BCP53-10H-QX

Nexperia USA Inc.

BCP53-10H-Q/SOT223/SC-73

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 725 mW
• Frequency - Transition: 140MHz
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: -

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BAT54S-QVL

Nexperia USA Inc.

DIODE ARR SCHOTT 30V TO236AB

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

封装: -

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