Microsemi Corporation 产品

APTGT50SK120TG

Microsemi Corporation

IGBT 1200V 75A 277W SP4

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Power - Max: 277W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

封装: SP4

2N2369A

Microsemi Corporation

TRANS NPN 15V TO18

• Transistor Type: NPN
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 400nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
• Power - Max: 360mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-18 (TO-206AA)

封装: TO-206AA, TO-18-3 Metal Can

JANTX2N3792

Microsemi Corporation

TRANS PNP 80V 10A TO-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
• Current - Collector Cutoff (Max): 5mA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
• Power - Max: 5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3

封装: TO-204AA, TO-3

JANTXV1N4966CUS

Microsemi Corporation

DIODE ZENER 22V 5W D5B

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 16.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

封装: SQ-MELF, E

SMBG5954A/TR13

Microsemi Corporation

DIODE ZENER 160V 2W SMBG

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±10%
• Power - Max: 2W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

1N5916CPE3/TR12

Microsemi Corporation

DIODE ZENER 4.3V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JAN1N4959DUS

Microsemi Corporation

DIODE ZENER 11V 5W D5B

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

封装: SQ-MELF, E

1N5732D

Microsemi Corporation

DIODE ZENER 6.8V 500MW DO35

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

1N750A-1

Microsemi Corporation

DIODE ZENER 4.7V 500MW DO35

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

封装: DO-204AH, DO-35, Axial

3EZ24D10E3/TR8

Microsemi Corporation

DIODE ZENER 24V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

SMAJ5946E3/TR13

Microsemi Corporation

DIODE ZENER 75V 3W DO214AC

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 140 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMAJ)

封装: DO-214AC, SMA

5818SMGE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 30V 1A DO215AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-215AA, SMB Gull Wing

JAN1N3957

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

封装: A, Axial

LSM840JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 8A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB
• Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

JANTX1N4148UBCA

Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Operating Temperature - Junction: -65°C ~ 200°C
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB

封装: 3-SMD, No Lead

APT2X60D120J

Microsemi Corporation

DIODE MODULE 1.2KV 53A ISOTOP

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 53A
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

封装: SOT-227-4, miniBLOC

LE57D122BTCT

Microsemi Corporation

IC SLIC 2CH 63DB 44TQFP

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: 2-Wire
• Number of Circuits: 2
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-TQFP Exposed Pad
• Supplier Device Package: 44-TQFP-EP (10x10)

封装: 44-TQFP Exposed Pad

M2S010TS-1FG484I

Microsemi Corporation

IC FPGA SOC 10K LUTS 484FBGA

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 10K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

封装: 484-BGA

M2S005-VFG400I

Microsemi Corporation

IC FPGA SOC 5K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 128KB
• RAM Size: 64KB
• Peripherals: DDR
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 5K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 400-LFBGA
• Supplier Device Package: 400-VFBGA (17x17)

封装: 400-LFBGA

A42MX36-2PQ208

Microsemi Corporation

IC FPGA 176 I/O 208QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 2560
• Number of I/O: 176
• Number of Gates: 54000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

MPF300T-1FCSG536E

Microsemi Corporation

IC FPGA 300 I/O

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 300000
• Total RAM Bits: 21094400
• Number of I/O: 300
• Number of Gates: -
• Voltage - Supply: 0.97 V ~ 1.08 V
• Mounting Type: -
• Operating Temperature: 0°C ~ 100°C (TJ)
• Package / Case: -
• Supplier Device Package: -

封装: -

M7AFS600-1FG256

Microsemi Corporation

IC FPGA 119 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 110592
• Number of I/O: 119
• Number of Gates: 600000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

封装: 256-LBGA

MA5KP11CA

Microsemi Corporation

TVS DIODE 11VWM 18.2VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 274A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

封装: DO-204AR, Axial

M1.5KE16A

Microsemi Corporation

TVS DIODE 13.6VWM 22.5VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 67A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MXLRT100KP130CA

Microsemi Corporation

TVS DIODE 130VWM 254VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 254V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

封装: DO-204AR, Axial

MXLSMLG85CAE3

Microsemi Corporation

TVS DIODE 85VWM 137VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 20.8A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MXL1.5KE75CAE3

Microsemi Corporation

TVS DIODE 64.1VWM 103VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 64.1V
• Voltage - Breakdown (Min): 71.3V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MAPLAD6.5KP48AE3

Microsemi Corporation

TVS DIODE 48VWM 77.4VC MINIPLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 85A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: Mini-PLAD

封装: Nonstandard SMD

MASMBG24AE3

Microsemi Corporation

TVS DIODE 24VWM 38.9VC DO215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 15.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

M15KP90A

Microsemi Corporation

TVS DIODE 90VWM 146VC DO204AR

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 146V
• Current - Peak Pulse (10/1000µs): 103A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

封装: DO-204AR, Axial