Microsemi Corporation 产品

APTGV25H120BG

Microsemi Corporation

IGBT NPT BST CHOP FULL BRDG SP4

• IGBT Type: NPT, Trench Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Power - Max: 156W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

封装: SP4

APTGT50H120TG

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP4

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Power - Max: 277W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 3.6nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Supplier Device Package: SP4

封装: SP4

APT80SM120S

Microsemi Corporation

POWER MOSFET - SIC

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 625W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT47F60J

Microsemi Corporation

MOSFET N-CH 600V 49A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 49A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 540W (Tc)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

MS1337

Microsemi Corporation

TRANS RF BIPO 70W 8A M113

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 10dB
• Power - Max: 70W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
• Current - Collector (Ic) (Max): 8A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M113
• Supplier Device Package: M113

封装: M113

SRF4427

Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 1.3GHz
• Noise Figure (dB Typ @ f): -
• Gain: 17dB ~ 18dB
• Power - Max: 1.5W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

1N5917P/TR8

Microsemi Corporation

DIODE ZENER 4.7V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

SMBG5923BE3/TR13

Microsemi Corporation

DIODE ZENER 8.2V 2W SMBG

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

封装: DO-215AA, SMB Gull Wing

2EZ27D5

Microsemi Corporation

DIODE ZENER 27V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

封装: DO-204AL, DO-41, Axial

JANTXV1N3037BUR-1

Microsemi Corporation

DIODE ZENER 51V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

封装: DO-213AB, MELF (Glass)

JANTXV1N3031B-1

Microsemi Corporation

DIODE ZENER 30V 1W DO41

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

封装: DO-204AL, DO-41, Axial

JANTXV1N4126-1

Microsemi Corporation

DIODE ZENER 51V 500MW DO35

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

封装: DO-204AH, DO-35, Axial

1N5343A/TR12

Microsemi Corporation

DIODE ZENER 7.5V 5W T18

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 1.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 5.4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

1PMT5954/TR13

Microsemi Corporation

DIODE ZENER 160V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

封装: DO-216AA

A54SX32-1PQG208M

Microsemi Corporation

IC FPGA 174 I/O 208QFP

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 174
• Number of Gates: 48000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

MP6KE47A

Microsemi Corporation

TVS DIODE 40.2VWM 64.8VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

封装: T-18, Axial

MLCE48AE3

Microsemi Corporation

TVS DIODE 48VWM 77.4VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 19.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MASMBJSAC36

Microsemi Corporation

TVS DIODE 36VWM 60VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 60V
• Current - Peak Pulse (10/1000µs): 8.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 30pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

M1.5KE160CAE3

Microsemi Corporation

TVS DIODE 136VWM 219VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 136V
• Voltage - Breakdown (Min): 152V
• Voltage - Clamping (Max) @ Ipp: 219V
• Current - Peak Pulse (10/1000µs): 6.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

封装: DO-201AA, DO-27, Axial

MPLAD36KP280CAE3

Microsemi Corporation

TVS DIODE 451VC 80A PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 280V
• Voltage - Breakdown (Min): 311V
• Voltage - Clamping (Max) @ Ipp: 451V
• Current - Peak Pulse (10/1000µs): 80A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

封装: Nonstandard SMD

MXSMLG16A

Microsemi Corporation

TVS DIODE 16VWM 26VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 115.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MXSMCJ12CAE3

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 75.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

1N6136AUS

Microsemi Corporation

TVS DIODE 136.8VWM SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 136.8V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 245.7V
• Current - Peak Pulse (10/1000µs): 2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

封装: SQ-MELF, B

MXLSMCJ170CA

Microsemi Corporation

TVS DIODE 170VWM 275VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC

MXLSMCG17AE3

Microsemi Corporation

TVS DIODE 17VWM 27.6VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 53.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

封装: DO-215AB, SMC Gull Wing

MXLSMBJ45CA

Microsemi Corporation

TVS DIODE 45VWM 72.7VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 45V
• Voltage - Breakdown (Min): 50V
• Voltage - Clamping (Max) @ Ipp: 72.7V
• Current - Peak Pulse (10/1000µs): 8.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

MASMBJ36A

Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

封装: DO-214AA, SMB

SMCG6042E3/TR13

Microsemi Corporation

TVS DIODE 10VWM 19VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 19V
• Current - Peak Pulse (10/1000µs): 79A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

封装: DO-215AB, SMC Gull Wing

SMCG5644E3/TR13

Microsemi Corporation

TVS DIODE 24.3VWM 43.5VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24.3V
• Voltage - Breakdown (Min): 27V
• Voltage - Clamping (Max) @ Ipp: 43.5V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

封装: DO-215AB, SMC Gull Wing

SMCJ6037/TR13

Microsemi Corporation

TVS DIODE 6.5VWM 12.5VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.5V
• Voltage - Breakdown (Min): 7.38V
• Voltage - Clamping (Max) @ Ipp: 12.5V
• Current - Peak Pulse (10/1000µs): 120A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

封装: DO-214AB, SMC