Micron Technology Inc. 产品

N25Q128A13BSFH0F

Micron Technology Inc.

IC SERIAL NOR SLC SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (32M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SO W

封装: 16-SOIC (0.295", 7.50mm Width)

MT41K2G4SN-107:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 8Gb (2G x 4)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (9x13.2)

封装: 78-TFBGA

N25Q064A13EW74ME

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8WPDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (16M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

NAND512R3A2SN6E

Micron Technology Inc.

IC FLASH 512MBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 50ns
• Access Time: 50ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

MT29F256G08CKCABH2-10Z:A

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-TBGA
• Supplier Device Package: 100-TBGA (12x18)

封装: 100-TBGA

MTFC64GJVDN-WT

Micron Technology Inc.

IC FLASH 512GBIT 169LFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 169-LFBGA
• Supplier Device Package: 169-LFBGA (14x18)

封装: 169-LFBGA

PC28F320J3D75A

Micron Technology Inc.

IC FLASH 32MBIT 75NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8, 2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 75ns
• Access Time: 75ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (10x13)

封装: 64-TBGA

MT45W8MW16BGX-701 WT TR

Micron Technology Inc.

IC PSRAM 128MBIT 70NS 54VFBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x10)

封装: 54-VFBGA

MT48V8M16LFF4-8:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 125MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 7ns
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

MT48LC32M8A2P-75 IT:D TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

MT28F128J3RG-12 MET

Micron Technology Inc.

IC FLASH 128MBIT 120NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 120ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP I

封装: 56-TFSOP (0.724", 18.40mm Width)

MT49H16M36SJ-25 IT:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 400MHZ 144FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (16M x 36)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FBGA (18.5x11)

封装: 144-TFBGA

MT44K32M18RB-125F:A

Micron Technology Inc.

IC RLDRAM 576MBIT 800MHZ 168FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (32M x 18)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8ns
• Voltage - Supply: 1.28 V ~ 1.42 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 168-TBGA
• Supplier Device Package: 168-BGA

封装: 168-TBGA

MT40A256M16GE-075E AAT:B TR

Micron Technology Inc.

IC SDRAM 4GBIT 1.33GHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.33GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (14x9)

封装: 96-TFBGA

PC28F256P33BFE

Micron Technology Inc.

IC FLASH 256MBIT 95NS 64EASYBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 52MHz
• Write Cycle Time - Word, Page: 95ns
• Access Time: 95ns
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-EasyBGA (8x10)

封装: 64-TBGA

MT29F2G08ABAFAH4-ITS:F TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

MTFC64GAJAEDQ-AAT

Micron Technology Inc.

IC FLASH 512G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT41K256M8DA-107 IT:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 933MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

MT53D4DHSB-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F4G08ABBDAHC-AIT:D

Micron Technology Inc.

IC FLASH 4G PARALLEL FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC128GAOANEA-WT TR

Micron Technology Inc.

IC FLASH 1T MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Tb (128G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT41K512M8DA-107 V:P TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 933MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F2G01ABBGDSF-IT:G TR

Micron Technology Inc.

IC FLASH 2G SPI SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (2G x 1)
• Memory Interface: SPI
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT47H128M8SH-25E IT:M TR

Micron Technology Inc.

IC SDRAM DDR2 1G 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-FBGA (8x10)

封装: 60-TFBGA

MT40A4G4VA-062E:B TR

Micron Technology Inc.

IC DDR4 SDRAM 16GB 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 16Gb (1G x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.6GHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 19ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (10x11)

封装: 78-TFBGA

MT53E768M32D4DT-053-AUT-E

Micron Technology Inc.

IC DRAM 24GBIT 1.866GHZ FBGA QDP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 24Gbit
• Memory Interface: -
• Clock Frequency: 1.866 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT58L32L32FT-8

Micron Technology Inc.

IC SRAM 1MBIT PARALLEL 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 1Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

封装: -

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MTFC32GAZAOTD-AAT-TR

Micron Technology Inc.

UFS 256G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MTFC64GASAONS-IT

Micron Technology Inc.

IC FLASH 512GBIT UFS2.1 153TFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gbit
• Memory Interface: UFS2.1
• Clock Frequency: 52 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 153-TFBGA
• Supplier Device Package: 153-TFBGA (11.5x13)

封装: -

MT58L1MY18FT-8-5

Micron Technology Inc.

IC SRAM 18MBIT PAR 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 18Mbit
• Memory Interface: Parallel
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.5 ns
• Voltage - Supply: 3.135V ~ 3.465V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

封装: -

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