Micron Technology Inc. 产品

MT42L128M32D1U80MWC1

Micron Technology Inc.

IC SDRAM 4GBIT

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 4Gb (128M x 32)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.3 V
• Operating Temperature: -25°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC4GLDEA-0M WT TR

Micron Technology Inc.

IC FLASH 32GBIT 153WFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-WFBGA
• Supplier Device Package: 153-WFBGA (11.5x13)

封装: 153-WFBGA

MT46V64M8TG-5B:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

PZ28F032M29EWLA

Micron Technology Inc.

IC FLASH 32MBIT 60NS 48BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8, 2M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 60ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-BGA (6x8)

封装: 48-VFBGA

MT46H128M16LFB7-5 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 60VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-VFBGA
• Supplier Device Package: 60-VFBGA (10x10)

封装: 60-VFBGA

MT29F32G08AECBBH1-12:B

Micron Technology Inc.

IC FLASH 32GBIT 83MHZ 100VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-VBGA
• Supplier Device Package: 100-VBGA (12x18)

封装: 100-VBGA

MT29F128G08AJAAAWP:A

Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gb (16G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

MT47H64M8B6-25E L:D TR

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 60-FBGA
• Supplier Device Package: 60-FBGA

封装: 60-FBGA

MT48LC32M8A2BB-7E:D

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 14ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-FBGA
• Supplier Device Package: 60-FBGA (8x16)

封装: 60-FBGA

MT46V16M16TG-75 IT:F TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT47H32M8BP-37E:B TR

Micron Technology Inc.

IC SDRAM 256MBIT 266MHZ 60FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 267MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 500ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 60-FBGA
• Supplier Device Package: 60-FBGA (8x12)

封装: 60-FBGA

MT40A512M16JY-083E:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.2GHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (8x14)

封装: 96-TFBGA

MT46H64M32LFBQ-48 WT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 208MHz
• Write Cycle Time - Word, Page: 14.4ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

MT29F2G08ABAEAWP-ATX:E TR

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F1G08ABBEAH4-IT:E

Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (10.5x13)

封装: 63-VFBGA

MT40A512M16LY-062E:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gb (512M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.6GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT28EW512ABA1LPN-0SIT TR

Micron Technology Inc.

IC FLASH 512M PARALLEL 56VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (64M x 8, 32M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 95ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFBGA
• Supplier Device Package: 56-VFBGA (7x9)

封装: 56-VFBGA

MT53B512M16D1Z11MWC2 MS

Micron Technology Inc.

LPDDR4 8G DIE 512MX16

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT40A1G16WBU-083E:B

Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 16Gb (1G x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT46V128M4CY-5B:J TR

Micron Technology Inc.

IC DRAM 512M PARALLEL 200MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53D512M16D1DS-046 WT:D

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 8Gb (512M x 16)
• Memory Interface: -
• Clock Frequency: 2.133GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

封装: -

MT62F1G32D4DS-031-WT-B-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 32Gbit
• Memory Interface: Parallel
• Clock Frequency: 3.2 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.05V
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MT40A4G8BAF-062E-B-TR

Micron Technology Inc.

IC DRAM 32GBIT PARALLEL 78FBGA

• Memory Type: Non-Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 32Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (10.5x11)

封装: -

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MT58L256L18P1T-7-5C

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Standard
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

封装: -

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MT40A1G8Z11BWC1

Micron Technology Inc.

IC DRAM 8GBIT PARALLEL WAFER

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Wafer

封装: -

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MT40A4G8BAF-062E-B

Micron Technology Inc.

IC DRAM 32GBIT PARALLEL 78FBGA

• Memory Type: Non-Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 32Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (10.5x11)

封装: -

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MTFC256GASAONS-IT-TR

Micron Technology Inc.

USSD 2T

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53E768M32D4DE-046-IT-E-TR

Micron Technology Inc.

IC DRAM

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4X
• Memory Size: 24Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

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MT29VZZZAD8GQFSL-046-W-9R8-TR

Micron Technology Inc.

EMCP544GB254/432VFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT62F768M64D4CA-031-XT-B

Micron Technology Inc.

LPDDR5 48G 768MX64 FBGA QDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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