页 217 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F32G08AFACAWP-ITZ:C	Micron Technology Inc.	IC FLASH 32GBIT TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存220,320	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F32G08AFACAWP-ITZ:C TR	Micron Technology Inc.	IC FLASH 32GBIT TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存6,080	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
EDFA364A3MA-GD-F-R TR	Micron Technology Inc.	LPDDR3 256MX64 PLASTIC GREEN VFB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,248	-	-	-	-	-	-	-	-	-	-	-	-
MT52L512M32D2PF-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,472	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L512M32D2PF-093 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 1.067GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,952	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2PP-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,848	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L512M32D2PU-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,288	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2LZ-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,256	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2GN-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,592	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2PP-093 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 1.067GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,568	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2PD-107 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,136	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
EDFA364A3MA-GD-F-D	Micron Technology Inc.	LPDDR3 256MX64 PLASTIC GREEN VFB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,440	-	-	-	-	-	-	-	-	-	-	-	-
EDFA364A3PM-GD-F-D	Micron Technology Inc.	LPDDR3 16G 256MX64 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,200	-	-	-	-	-	-	-	-	-	-	-	-
MT52L256M64D2QB-125 XT:B	Micron Technology Inc.	IC SDRAM 16GBIT 800MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,384	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	800MHz	-	-	1.2V	-	-	-	-
MT51K256M32HF-50 N:A TR	Micron Technology Inc.	256MX32 GDDR5 PLASTIC COMMERCIAL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,360	-	-	-	-	-	-	-	-	-	-	-	-
MT41K2G4RKB-107:N TR	Micron Technology Inc.	IC SDRAM 8GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (2G x 4) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存3,472	DRAM	SDRAM - DDR3L	8Gb (2G x 4)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	78-TFBGA	78-FBGA (8x10.5)
MTFC32GJDED-3M WT TR	Micron Technology Inc.	IC FLASH 256GBIT 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 169-VFBGA Supplier Device Package: 169-VFBGA (14x18)	封装: 169-VFBGA	库存4,128	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	1.65 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	169-VFBGA	169-VFBGA (14x18)
MTFC32GJDED-3M WT	Micron Technology Inc.	IC FLASH 256GBIT 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 169-VFBGA Supplier Device Package: 169-VFBGA (14x18)	封装: 169-VFBGA	库存48,000	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	1.65 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	169-VFBGA	169-VFBGA (14x18)
MT53B384M32D2NP-062 AUT:B TR	Micron Technology Inc.	IC SDRAM 12GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,216	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 125°C (TA)	-	-	-
MT29E768G08EEHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 768GBIT 333MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 768Gb (96G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,264	FLASH	FLASH - NAND	768Gb (96G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08CJAAAWP-Z:A TR	Micron Technology Inc.	IC FLASH 256GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存7,040	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F256G08CJAAAWP-Z:A	Micron Technology Inc.	IC FLASH 256GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存4,688	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
EMFB232A1MA-DV-F-D	Micron Technology Inc.	LPDDR3 32G 1GX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,800	-	-	-	-	-	-	-	-	-	-	-	-
MT29F512G08CECBBJ4-37ES:B TR	Micron Technology Inc.	IC FLASH 512GBIT 267MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,528	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E384G08EBHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 384GBIT 333MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 384Gb (48G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,856	FLASH	FLASH - NAND	384Gb (48G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F384G08EBHBBB0KB3WC1-R	Micron Technology Inc.	IC FLASH 384GBIT WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 384Gb (48G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,392	FLASH	FLASH - NAND	384Gb (48G x 8)	Parallel	-	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F384G08EBCBBB0KB3WC1	Micron Technology Inc.	IC FLASH 384GBIT WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 384Gb (48G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,320	FLASH	FLASH - NAND	384Gb (48G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT28HL08GNBB3EBK-0GCT	Micron Technology Inc.	NOR FLASH 256MX32 PLASTIC 3.3V Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,424	-	-	-	-	-	-	-	-	-	-	-	-
MT29E256G08CECCBH6-6:C	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 152VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,864	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F16G08ABCBBH1-12AIT:B TR	Micron Technology Inc.	IC FLASH 16GBIT 100VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,016	FLASH	FLASH - NAND	16Gb (2G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-

MT29F32G08AFACAWP-ITZ:C

Micron Technology Inc.

IC FLASH 32GBIT TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存220,320

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F32G08AFACAWP-ITZ:C TR

Micron Technology Inc.

IC FLASH 32GBIT TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存6,080

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

EDFA364A3MA-GD-F-R TR

Micron Technology Inc.

LPDDR3 256MX64 PLASTIC GREEN VFB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,248

-

MT52L512M32D2PF-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,472

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L512M32D2PF-093 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 1.067GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,952

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2PP-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,848

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L512M32D2PU-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,288

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2LZ-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,256

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2GN-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,592

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2PP-093 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 1.067GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,568

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2PD-107 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,136

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

EDFA364A3MA-GD-F-D

Micron Technology Inc.

LPDDR3 256MX64 PLASTIC GREEN VFB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,440

-

EDFA364A3PM-GD-F-D

Micron Technology Inc.

LPDDR3 16G 256MX64 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,200

-

MT52L256M64D2QB-125 XT:B

Micron Technology Inc.

IC SDRAM 16GBIT 800MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,384

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

800MHz

-

1.2V

-

MT51K256M32HF-50 N:A TR

Micron Technology Inc.

256MX32 GDDR5 PLASTIC COMMERCIAL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,360

-

MT41K2G4RKB-107:N TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (2G x 4)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存3,472

DRAM

SDRAM - DDR3L

8Gb (2G x 4)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

78-TFBGA

78-FBGA (8x10.5)

MTFC32GJDED-3M WT TR

Micron Technology Inc.

IC FLASH 256GBIT 169VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 169-VFBGA
Supplier Device Package: 169-VFBGA (14x18)

封装: 169-VFBGA

库存4,128

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

1.65 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

169-VFBGA

169-VFBGA (14x18)

MTFC32GJDED-3M WT

Micron Technology Inc.

IC FLASH 256GBIT 169VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 169-VFBGA
Supplier Device Package: 169-VFBGA (14x18)

封装: 169-VFBGA

库存48,000

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

1.65 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

169-VFBGA

169-VFBGA (14x18)

MT53B384M32D2NP-062 AUT:B TR

Micron Technology Inc.

IC SDRAM 12GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,216

DRAM

SDRAM - Mobile LPDDR4

12Gb (384M x 32)

-

1600MHz

-

1.1V

-40°C ~ 125°C (TA)

-

MT29E768G08EEHBBJ4-3ES:B TR

Micron Technology Inc.

IC FLASH 768GBIT 333MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 768Gb (96G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,264

FLASH

FLASH - NAND

768Gb (96G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F256G08CJAAAWP-Z:A TR

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存7,040

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F256G08CJAAAWP-Z:A

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存4,688

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

EMFB232A1MA-DV-F-D

Micron Technology Inc.

LPDDR3 32G 1GX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,800

-

MT29F512G08CECBBJ4-37ES:B TR

Micron Technology Inc.

IC FLASH 512GBIT 267MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,528

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29E384G08EBHBBJ4-3:B TR

Micron Technology Inc.

IC FLASH 384GBIT 333MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 384Gb (48G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,856

FLASH

FLASH - NAND

384Gb (48G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F384G08EBHBBB0KB3WC1-R

Micron Technology Inc.

IC FLASH 384GBIT WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 384Gb (48G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,392

FLASH

FLASH - NAND

384Gb (48G x 8)

Parallel

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F384G08EBCBBB0KB3WC1

Micron Technology Inc.

IC FLASH 384GBIT WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 384Gb (48G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,320

FLASH

FLASH - NAND

384Gb (48G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT28HL08GNBB3EBK-0GCT

Micron Technology Inc.

NOR FLASH 256MX32 PLASTIC 3.3V

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,424

-

MT29E256G08CECCBH6-6:C

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 152VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,864

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F16G08ABCBBH1-12AIT:B TR

Micron Technology Inc.

IC FLASH 16GBIT 100VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,016

FLASH

FLASH - NAND

16Gb (2G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-