页 204 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PC48F4400P0VB0EF TR	Micron Technology Inc.	IC FLASH 512MBIT 85NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	封装: 64-TBGA	库存7,328	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	52MHz	85ns	85ns	1.7 V ~ 2 V	-40°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
MT41K256M16TW-107 AAT:P	Micron Technology Inc.	IC SDRAM 4GBIT 933MHZ 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	封装: 96-TFBGA	库存2,832	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MTFC8GAKAJCN-4M IT	Micron Technology Inc.	MASSFLASH/CONTROLLER 64G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,352	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MTFC8GAKAJCN-4M IT TR	Micron Technology Inc.	MASSFLASH/CONTROLLER 64G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,616	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT47H256M8EB-25E:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (9x11.5)	封装: 60-TFBGA	库存5,840	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (9x11.5)
MT47H128M16RT-25E:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 400MHZ 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (9x12.5)	封装: 84-TFBGA	库存2,320	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (9x12.5)
MT41K512M8DA-107 AAT:P TR	Micron Technology Inc.	IC SDRAM 4GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存2,112	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
EDB4064B4PB-1DIT-F-R TR	Micron Technology Inc.	LPDDR2 4G 64MX64 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 216-WFBGA Supplier Device Package: 216-WFBGA (12x12)	封装: 216-WFBGA	库存2,432	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	216-WFBGA	216-WFBGA (12x12)
EDB8132B4PB-8D-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 400MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	封装: 168-WFBGA	库存5,248	DRAM	SDRAM - Mobile LPDDR2	8Gb (256M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
EDF8164A3PK-GD-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 800MHZ 256FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,432	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	800MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDF8164A3PF-JD-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,072	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDF8164A3PF-GD-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 800MHZ 256FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,568	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	800MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDF8132A3PB-GD-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 800MHZ 216FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,504	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	Parallel	800MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
MT29F64G08CBCGBL04A3WC1-M	Micron Technology Inc.	IC FLASH 64GBIT WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,288	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT25QU01GBBB8E12-0AAT TR	Micron Technology Inc.	IC FLASH 1GBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 166MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存5,760	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	166MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QL01GBBB8E12-0AAT TR	Micron Technology Inc.	IC FLASH 1GBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存2,100	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
RC28F256J3F95A	Micron Technology Inc.	IC FLASH 256MBIT 95NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 95ns Access Time: 95ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	封装: 64-TBGA	库存105,792	FLASH	FLASH - NOR	256Mb (32M x 8, 16M x 16)	Parallel	-	95ns	95ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
MT29AZ5A3CHHWD-18AIT.84F TR	Micron Technology Inc.	MASSFLASH/LPDDR2 6G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,992	-	-	-	-	-	-	-	-	-	-	-	-
MTFC4GMWDQ-3M AIT TR	Micron Technology Inc.	IC FLASH 32GBIT 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,512	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MTFC4GMWDM-3M AIT TR	Micron Technology Inc.	IC FLASH 32GBIT 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,280	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT41K512M8DA-093 IT:P TR	Micron Technology Inc.	IC SDRAM 4GBIT 1067MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存3,568	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K256M16TW-093 IT:P TR	Micron Technology Inc.	IC SDRAM 4GBIT 1067MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	封装: 96-TFBGA	库存5,792	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT46H128M16LFDD-48 AIT:C	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封装: 60-VFBGA	库存4,912	DRAM	SDRAM - Mobile LPDDR	2Gb (128M x 16)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H64M32LFBQ-48 AIT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封装: 90-VFBGA	库存7,120	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
MT46H128M16LFDD-48 AIT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封装: 60-VFBGA	库存5,088	DRAM	SDRAM - Mobile LPDDR	2Gb (128M x 16)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
MT46H64M32LFBQ-48 AIT:C	Micron Technology Inc.	IC SDRAM 2GBIT 208MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封装: 90-VFBGA	库存5,488	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
EDB8164B4PK-1D-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 220FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 220-WFBGA Supplier Device Package: 220-FBGA (14x14)	封装: 220-WFBGA	库存6,480	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	220-WFBGA	220-FBGA (14x14)
EDB8132B4PM-1D-F-R TR	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	封装: 168-WFBGA	库存4,416	DRAM	SDRAM - Mobile LPDDR2	8Gb (256M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
EDB8164B4PK-1D-F-D	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 220FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 220-WFBGA Supplier Device Package: 220-FBGA (14x14)	封装: 220-WFBGA	库存5,232	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	220-WFBGA	220-FBGA (14x14)
EDB8164B4PT-1D-F-D	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 216FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 216-WFBGA Supplier Device Package: 216-FBGA (12x12)	封装: 216-WFBGA	库存5,184	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	216-WFBGA	216-FBGA (12x12)

PC48F4400P0VB0EF TR

Micron Technology Inc.

IC FLASH 512MBIT 85NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

封装: 64-TBGA

库存7,328

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

52MHz

85ns

1.7 V ~ 2 V

-40°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

MT41K256M16TW-107 AAT:P

Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

封装: 96-TFBGA

库存2,832

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MTFC8GAKAJCN-4M IT

Micron Technology Inc.

MASSFLASH/CONTROLLER 64G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,352

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MTFC8GAKAJCN-4M IT TR

Micron Technology Inc.

MASSFLASH/CONTROLLER 64G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,616

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT47H256M8EB-25E:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (9x11.5)

封装: 60-TFBGA

库存5,840

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (9x11.5)

MT47H128M16RT-25E:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (9x12.5)

封装: 84-TFBGA

库存2,320

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (9x12.5)

MT41K512M8DA-107 AAT:P TR

Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存2,112

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

EDB4064B4PB-1DIT-F-R TR

Micron Technology Inc.

LPDDR2 4G 64MX64 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (64M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 216-WFBGA
Supplier Device Package: 216-WFBGA (12x12)

封装: 216-WFBGA

库存2,432

DRAM

SDRAM - Mobile LPDDR2

4Gb (64M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

216-WFBGA

216-WFBGA (12x12)

EDB8132B4PB-8D-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 400MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

封装: 168-WFBGA

库存5,248

DRAM

SDRAM - Mobile LPDDR2

8Gb (256M x 32)

Parallel

400MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

EDF8164A3PK-GD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 800MHZ 256FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,432

DRAM

SDRAM - Mobile LPDDR3

8Gb (128M x 64)

Parallel

800MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDF8164A3PF-JD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,072

DRAM

SDRAM - Mobile LPDDR3

8Gb (128M x 64)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDF8164A3PF-GD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 800MHZ 256FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,568

DRAM

SDRAM - Mobile LPDDR3

8Gb (128M x 64)

Parallel

800MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDF8132A3PB-GD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 800MHZ 216FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,504

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

Parallel

800MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

MT29F64G08CBCGBL04A3WC1-M

Micron Technology Inc.

IC FLASH 64GBIT WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,288

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT25QU01GBBB8E12-0AAT TR

Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存5,760

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

166MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT25QL01GBBB8E12-0AAT TR

Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存2,100

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

RC28F256J3F95A

Micron Technology Inc.

IC FLASH 256MBIT 95NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 95ns
Access Time: 95ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

封装: 64-TBGA

库存105,792

FLASH

FLASH - NOR

256Mb (32M x 8, 16M x 16)

Parallel

-

95ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

MT29AZ5A3CHHWD-18AIT.84F TR

Micron Technology Inc.

MASSFLASH/LPDDR2 6G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,992

-

MTFC4GMWDQ-3M AIT TR

Micron Technology Inc.

IC FLASH 32GBIT 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,512

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MTFC4GMWDM-3M AIT TR

Micron Technology Inc.

IC FLASH 32GBIT 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,280

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT41K512M8DA-093 IT:P TR

Micron Technology Inc.

IC SDRAM 4GBIT 1067MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存3,568

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT41K256M16TW-093 IT:P TR

Micron Technology Inc.

IC SDRAM 4GBIT 1067MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

封装: 96-TFBGA

库存5,792

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT46H128M16LFDD-48 AIT:C

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封装: 60-VFBGA

库存4,912

DRAM

SDRAM - Mobile LPDDR

2Gb (128M x 16)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H64M32LFBQ-48 AIT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

库存7,120

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

MT46H128M16LFDD-48 AIT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封装: 60-VFBGA

库存5,088

DRAM

SDRAM - Mobile LPDDR

2Gb (128M x 16)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

MT46H64M32LFBQ-48 AIT:C

Micron Technology Inc.

IC SDRAM 2GBIT 208MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

库存5,488

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

EDB8164B4PK-1D-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 220FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 220-WFBGA
Supplier Device Package: 220-FBGA (14x14)

封装: 220-WFBGA

库存6,480

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

220-WFBGA

220-FBGA (14x14)

EDB8132B4PM-1D-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

封装: 168-WFBGA

库存4,416

DRAM

SDRAM - Mobile LPDDR2

8Gb (256M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

EDB8164B4PK-1D-F-D

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 220FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 220-WFBGA
Supplier Device Package: 220-FBGA (14x14)

封装: 220-WFBGA

库存5,232

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

220-WFBGA

220-FBGA (14x14)

EDB8164B4PT-1D-F-D

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 216FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 216-WFBGA
Supplier Device Package: 216-FBGA (12x12)

封装: 216-WFBGA

库存5,184

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

216-WFBGA

216-FBGA (12x12)