页 154 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F2G08ABAEAH4-IT:E	Micron Technology Inc.	IC FLASH 2GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存7,236	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT41K128M8DA-107:J	Micron Technology Inc.	IC SDRAM 1GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存14,772	DRAM	SDRAM - DDR3L	1Gb (128M x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT29F4G08ABADAWP-IT:D TR	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存31,254	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F1G08ABADAH4-IT:D	Micron Technology Inc.	IC FLASH 1GBIT 20NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存174,624	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F2G16ABAEAWP:E	Micron Technology Inc.	IC FLASH 2GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存5,360	FLASH	FLASH - NAND	2Gb (128M x 16)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F4G16ABADAWP:D TR	Micron Technology Inc.	IC FLASH 4GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存17,946	FLASH	FLASH - NAND	4Gb (256M x 16)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F2G08ABAEAH4:E TR	Micron Technology Inc.	IC FLASH 2GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存29,862	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F1G08ABADAWP-IT:D TR	Micron Technology Inc.	IC FLASH 1GBIT 20NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存28,302	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT29F2T08EMHAFJ4-3TES:A	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,304	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08EMHAFJ4-3T:A	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,424	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29VZZZBC9FQOPR-053 W.G9G	Micron Technology Inc.	ALL IN ONE MCP 1072G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,936	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08AMEBBH7-12:B	Micron Technology Inc.	IC FLASH 256G PARALLEL 83MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,088	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT40A4G8KVA-083H:G	Micron Technology Inc.	IC DRAM 32G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,976	DRAM	SDRAM - DDR4	32Gb (4G x 8)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT52L1G64D8QC-107 WT:B	Micron Technology Inc.	IC DRAM 64G 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,104	DRAM	SDRAM - Mobile LPDDR3	64Gb (1G x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4SB-046 XT:E	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,960	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53D512M64D4SB-046 XT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,544	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53D512M64D4RQ-046 WT:E	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,064	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NZ-046 WT:E	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,576	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D512M64D4NW-046 WT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,952	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M32D4NQ-046 WT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,104	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M32D4NQ-046 AIT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,656	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2133MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53D1024M32D4NQ-046 AAT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,408	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2133MHz	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT29VZZZBD8DQOPR-053 W.9G8	Micron Technology Inc.	ALL IN ONE MCP 5600G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,304	-	-	-	-	-	-	-	-	-	-	-	-
MT53D768M64D8WF-053 WT:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,920	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8SQ-053 WT:E	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,328	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8RG-053 WT:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,904	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D768M64D8JS-053 WT:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,808	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1536M32D6BE-053 WT:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (1.5G x 32) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,248	DRAM	SDRAM - Mobile LPDDR4	48Gb (1.5G x 32)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B768M64D8WF-062 WT:D	Micron Technology Inc.	IC DRAM 48G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,640	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B768M64D8NK-053 WT:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,984	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-

MT29F2G08ABAEAH4-IT:E

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存7,236

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT41K128M8DA-107:J

Micron Technology Inc.

IC SDRAM 1GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存14,772

DRAM

SDRAM - DDR3L

1Gb (128M x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT29F4G08ABADAWP-IT:D TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存31,254

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F1G08ABADAH4-IT:D

Micron Technology Inc.

IC FLASH 1GBIT 20NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存174,624

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F2G16ABAEAWP:E

Micron Technology Inc.

IC FLASH 2GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存5,360

FLASH

FLASH - NAND

2Gb (128M x 16)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F4G16ABADAWP:D TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存17,946

FLASH

FLASH - NAND

4Gb (256M x 16)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F2G08ABAEAH4:E TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存29,862

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F1G08ABADAWP-IT:D TR

Micron Technology Inc.

IC FLASH 1GBIT 20NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存28,302

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT29F2T08EMHAFJ4-3TES:A

Micron Technology Inc.

IC FLASH 2T PARALLEL 333MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,304

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F2T08EMHAFJ4-3T:A

Micron Technology Inc.

IC FLASH 2T PARALLEL 333MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,424

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29VZZZBC9FQOPR-053 W.G9G

Micron Technology Inc.

ALL IN ONE MCP 1072G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,936

-

MT29F256G08AMEBBH7-12:B

Micron Technology Inc.

IC FLASH 256G PARALLEL 83MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,088

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT40A4G8KVA-083H:G

Micron Technology Inc.

IC DRAM 32G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,976

DRAM

SDRAM - DDR4

32Gb (4G x 8)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT52L1G64D8QC-107 WT:B

Micron Technology Inc.

IC DRAM 64G 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,104

DRAM

SDRAM - Mobile LPDDR3

64Gb (1G x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT53D512M64D4SB-046 XT:E

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,960

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53D512M64D4SB-046 XT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,544

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53D512M64D4RQ-046 WT:E

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,064

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D512M64D4NZ-046 WT:E

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,576

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D512M64D4NW-046 WT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,952

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M32D4NQ-046 WT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,104

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1024M32D4NQ-046 AIT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,656

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

2133MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT53D1024M32D4NQ-046 AAT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,408

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

2133MHz

-

1.1V

-40°C ~ 105°C (TA)

-

MT29VZZZBD8DQOPR-053 W.9G8

Micron Technology Inc.

ALL IN ONE MCP 5600G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,304

-

MT53D768M64D8WF-053 WT:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,920

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D768M64D8SQ-053 WT:E

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,328

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D768M64D8RG-053 WT:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,904

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D768M64D8JS-053 WT:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,808

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53D1536M32D6BE-053 WT:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (1.5G x 32)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,248

DRAM

SDRAM - Mobile LPDDR4

48Gb (1.5G x 32)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B768M64D8WF-062 WT:D

Micron Technology Inc.

IC DRAM 48G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,640

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B768M64D8NK-053 WT:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,984

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-