页 112 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53B256M64D2NL-062 XT:B	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存245,160	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B256M64D2NK-062 WT:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,296	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M64D2NK-053 WT:C	Micron Technology Inc.	IC DRAM 16G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,880	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1NP-062 WT:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,440	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1NP-062 AIT:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,904	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53B256M32D1NP-062 AAT:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,016	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53B1024M32D4NQ-062 WT:C	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,032	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT52L768M32D3PU-107 WT:B	Micron Technology Inc.	IC DRAM 24G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 24Gb (768M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存60,000	DRAM	SDRAM - Mobile LPDDR3	24Gb (768M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L512M64D4GN-107 WT:B	Micron Technology Inc.	IC DRAM 32G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,264	DRAM	SDRAM - Mobile LPDDR3	32Gb (512M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L512M32D2PU-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,160	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L512M32D2PF-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,872	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L512M32D2PF-093 WT:B	Micron Technology Inc.	IC DRAM 16G 1067MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,752	DRAM	SDRAM - Mobile LPDDR3	16Gb (512M x 32)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2PP-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,800	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2PD-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,280	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2LZ-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,408	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M32D1PF-107 WT:B	Micron Technology Inc.	IC DRAM 8G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,312	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M32D1PF-093 WT:B	Micron Technology Inc.	IC DRAM 8G 1067MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,488	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT51K256M32HF-50 N:A	Micron Technology Inc.	IC RAM 8G PARALLEL 1.25GHZ Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 1.25GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,088	RAM	SGRAM - GDDR5	8Gb (256M x 32)	Parallel	1.25GHz	-	-	1.3 V ~ 1.545 V	0°C ~ 95°C (TC)	-	-	-
MT51J256M32HF-80:A	Micron Technology Inc.	IC RAM 8G PARALLEL 2.0GHZ FBGA Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 2.0GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存17,232	RAM	SGRAM - GDDR5	8Gb (256M x 32)	Parallel	2.0GHz	-	-	1.3 V ~ 1.545 V	0°C ~ 95°C (TC)	-	-	-
MT51J256M32HF-70:A	Micron Technology Inc.	IC RAM 8G PARALLEL 1.75GHZ Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 1.75GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,348	RAM	SGRAM - GDDR5	8Gb (256M x 32)	Parallel	1.75GHz	-	-	1.3 V ~ 1.545 V	0°C ~ 95°C (TC)	-	-	-
MT51J256M32HF-60:A	Micron Technology Inc.	IC RAM 8G PARALLEL 1.5GHZ FBGA Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 1.5GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,320	RAM	SGRAM - GDDR5	8Gb (256M x 32)	Parallel	1.5GHz	-	-	1.3 V ~ 1.545 V	0°C ~ 95°C (TC)	-	-	-
MT48LC16M16A2P-7E AIT:G	Micron Technology Inc.	IC DRAM 256M PARALLEL 133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,888	DRAM	SDRAM	256Mb (16M x 16)	Parallel	133MHz	14ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT47H64M8SH-25E AAT:H	Micron Technology Inc.	IC DRAM 512M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x18)	封装: 60-TFBGA	库存5,232	DRAM	SDRAM - DDR2	512Mb (64M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x18)
MT47H64M16NF-25E AUT:M	Micron Technology Inc.	IC DRAM 1G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,456	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 125°C (TC)	-	-	-
MT47H32M16NF-25E AUT:H	Micron Technology Inc.	IC DRAM 512M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,488	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 125°C (TC)	-	-	-
MT46H64M16LFBF-5 AAT:B	Micron Technology Inc.	IC DRAM 1G PARALLEL 200MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,256	DRAM	SDRAM - Mobile LPDDR	1Gb (64M x 16)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT46H32M16LFBF-6 AAT:C	Micron Technology Inc.	IC DRAM 512M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,688	DRAM	SDRAM - Mobile LPDDR	512Mb (32M x 16)	Parallel	166MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT44K64M18RB-107E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (64Mb x 18) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,088	DRAM	DRAM	1.125Gb (64Mb x 18)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-093F:A	Micron Technology Inc.	RLDRAM 3 1.125G 64MX18 TBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (64Mb x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,568	DRAM	DRAM	1.125Gb (64Mb x 18)	Parallel	1067MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT44K64M18RB-093E:A	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (64Mb x 18) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,464	DRAM	DRAM	1.125Gb (64Mb x 18)	Parallel	1067MHz	-	8ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-

MT53B256M64D2NL-062 XT:B

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存245,160

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53B256M64D2NK-062 WT:C

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,296

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M64D2NK-053 WT:C

Micron Technology Inc.

IC DRAM 16G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,880

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1NP-062 WT:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,440

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1NP-062 AIT:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,904

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT53B256M32D1NP-062 AAT:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,016

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-40°C ~ 105°C (TA)

-

MT53B1024M32D4NQ-062 WT:C

Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,032

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT52L768M32D3PU-107 WT:B

Micron Technology Inc.

IC DRAM 24G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 24Gb (768M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存60,000

DRAM

SDRAM - Mobile LPDDR3

24Gb (768M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L512M64D4GN-107 WT:B

Micron Technology Inc.

IC DRAM 32G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,264

DRAM

SDRAM - Mobile LPDDR3

32Gb (512M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L512M32D2PU-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,160

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L512M32D2PF-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,872

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L512M32D2PF-093 WT:B

Micron Technology Inc.

IC DRAM 16G 1067MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,752

DRAM

SDRAM - Mobile LPDDR3

16Gb (512M x 32)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2PP-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,800

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2PD-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,280

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2LZ-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,408

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M32D1PF-107 WT:B

Micron Technology Inc.

IC DRAM 8G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,312

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M32D1PF-093 WT:B

Micron Technology Inc.

IC DRAM 8G 1067MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,488

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT51K256M32HF-50 N:A

Micron Technology Inc.

IC RAM 8G PARALLEL 1.25GHZ

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 1.25GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,088

RAM

SGRAM - GDDR5

8Gb (256M x 32)

Parallel

1.25GHz

-

1.3 V ~ 1.545 V

0°C ~ 95°C (TC)

-

MT51J256M32HF-80:A

Micron Technology Inc.

IC RAM 8G PARALLEL 2.0GHZ FBGA

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 2.0GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存17,232

RAM

SGRAM - GDDR5

8Gb (256M x 32)

Parallel

2.0GHz

-

1.3 V ~ 1.545 V

0°C ~ 95°C (TC)

-

MT51J256M32HF-70:A

Micron Technology Inc.

IC RAM 8G PARALLEL 1.75GHZ

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 1.75GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,348

RAM

SGRAM - GDDR5

8Gb (256M x 32)

Parallel

1.75GHz

-

1.3 V ~ 1.545 V

0°C ~ 95°C (TC)

-

MT51J256M32HF-60:A

Micron Technology Inc.

IC RAM 8G PARALLEL 1.5GHZ FBGA

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 1.5GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,320

RAM

SGRAM - GDDR5

8Gb (256M x 32)

Parallel

1.5GHz

-

1.3 V ~ 1.545 V

0°C ~ 95°C (TC)

-

MT48LC16M16A2P-7E AIT:G

Micron Technology Inc.

IC DRAM 256M PARALLEL 133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,888

DRAM

SDRAM

256Mb (16M x 16)

Parallel

133MHz

14ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT47H64M8SH-25E AAT:H

Micron Technology Inc.

IC DRAM 512M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x18)

封装: 60-TFBGA

库存5,232

DRAM

SDRAM - DDR2

512Mb (64M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 105°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x18)

MT47H64M16NF-25E AUT:M

Micron Technology Inc.

IC DRAM 1G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,456

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 125°C (TC)

-

MT47H32M16NF-25E AUT:H

Micron Technology Inc.

IC DRAM 512M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,488

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 125°C (TC)

-

MT46H64M16LFBF-5 AAT:B

Micron Technology Inc.

IC DRAM 1G PARALLEL 200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,256

DRAM

SDRAM - Mobile LPDDR

1Gb (64M x 16)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

-

MT46H32M16LFBF-6 AAT:C

Micron Technology Inc.

IC DRAM 512M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,688

DRAM

SDRAM - Mobile LPDDR

512Mb (32M x 16)

Parallel

166MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

-

MT44K64M18RB-107E:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (64Mb x 18)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,088

DRAM

1.125Gb (64Mb x 18)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K64M18RB-093F:A

Micron Technology Inc.

RLDRAM 3 1.125G 64MX18 TBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (64Mb x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,568

DRAM

1.125Gb (64Mb x 18)

Parallel

1067MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT44K64M18RB-093E:A

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (64Mb x 18)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,464

DRAM

1.125Gb (64Mb x 18)

Parallel

1067MHz

-

8ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-