页 104 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT44K16M36RB-107E IT:B	Micron Technology Inc.	IC DRAM 576M PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,776	DRAM	DRAM	576Mb (16M x 36)	Parallel	933MHz	-	8ns	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	-	-
MT52L256M64D2PP-093 WT:B	Micron Technology Inc.	IC DRAM 16G 1067MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,112	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2GN-107 WT:B	Micron Technology Inc.	IC DRAM 16G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,608	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT41K512M16HA-107 IT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (14x9)	封装: 96-TFBGA	库存5,168	DRAM	SDRAM - DDR3L	8Gb (512M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (14x9)
MT46H256M32L4LE-48 WT:C	Micron Technology Inc.	IC DRAM 8G PARALLEL 208MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 208MHz Write Cycle Time - Word, Page: 14.4ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,592	DRAM	SDRAM - Mobile LPDDR	8Gb (256M x 32)	Parallel	208MHz	14.4ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	-	-	-
MT47H512M4THN-25E:M	Micron Technology Inc.	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,400	DRAM	SDRAM - DDR2	2Gb (512M x 4)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	-	-	-
MT40A512M16HA-083E IT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,112	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M16HA-083E:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,712	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT41K512M8DA-093 IT:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存7,920	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT41K256M16TW-093 IT:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	封装: 96-TFBGA	库存5,728	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT46H64M32LFKQ-5 IT:C	Micron Technology Inc.	IC DRAM 2G PARALLEL 167MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,304	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	167MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT40A512M8RH-075E IT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.33GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,152	DRAM	SDRAM - DDR4	4Gb (512M x 8)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT41K256M16LY-093:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	封装: 96-TFBGA	库存7,280	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT41K128M16JT-125 V:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	封装: 96-TFBGA	库存7,888	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
EDF8164A3PK-JD-F-R	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,592	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDB8164B4PT-1DAT-F-R	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,808	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
EDB4416BBBH-1DIT-F-R	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,176	DRAM	SDRAM - Mobile LPDDR2	4Gb (256M x 16)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
EDB5432BEPA-1DIT-F-R	Micron Technology Inc.	IC DRAM 512M PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,152	DRAM	SDRAM - Mobile LPDDR2	512Mb (16M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
ECF840AAACN-C2-Y3	Micron Technology Inc.	IC DRAM 8G PARALLEL Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,496	DRAM	SDRAM - Mobile LPDDR3	8Gb (512M x 16)	Parallel	-	-	-	1.14 V ~ 1.95 V	-	-	-	-
MT41K512M8V00HWC1-N002	Micron Technology Inc.	IC DRAM 4G PARALLEL Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,912	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	-	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K256M16V90BWC1	Micron Technology Inc.	IC DRAM 4G PARALLEL DIE Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,848	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	-	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT48LC16M16A2Y66AWC1	Micron Technology Inc.	IC DRAM 256M PARALLEL 133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,840	DRAM	SDRAM	256Mb (16M x 16)	Parallel	133MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT41K256M8V89CWC1	Micron Technology Inc.	IC DRAM 2G PARALLEL DIE Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,672	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	-	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT46H16M32LFT67M-N1003	Micron Technology Inc.	IC SDRAM MOBILE DDR 512M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,944	-	-	-	-	-	-	-	-	-	-	-	-
MT41K64M16V88AWC1	Micron Technology Inc.	IC DRAM 1G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,096	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MTA9ASF1G72HZ-2G6E1	Micron Technology Inc.	IC SDRAM DDR4 8GB SODIMM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,104	-	-	-	-	-	-	-	-	-	-	-	-
MTA8ATF51264HZ-2G6B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,672	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF51264HZ-2G1B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,248	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1067MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF51264AZ-2G6B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,888	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF51264AZ-2G1B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,416	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1067MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-

MT44K16M36RB-107E IT:B

Micron Technology Inc.

IC DRAM 576M PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,776

DRAM

576Mb (16M x 36)

Parallel

933MHz

-

8ns

1.28 V ~ 1.42 V

-40°C ~ 95°C (TC)

-

MT52L256M64D2PP-093 WT:B

Micron Technology Inc.

IC DRAM 16G 1067MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,112

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2GN-107 WT:B

Micron Technology Inc.

IC DRAM 16G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,608

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT41K512M16HA-107 IT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (14x9)

封装: 96-TFBGA

库存5,168

DRAM

SDRAM - DDR3L

8Gb (512M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (14x9)

MT46H256M32L4LE-48 WT:C

Micron Technology Inc.

IC DRAM 8G PARALLEL 208MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 208MHz
Write Cycle Time - Word, Page: 14.4ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,592

DRAM

SDRAM - Mobile LPDDR

8Gb (256M x 32)

Parallel

208MHz

14.4ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

-

MT47H512M4THN-25E:M

Micron Technology Inc.

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,400

DRAM

SDRAM - DDR2

2Gb (512M x 4)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

-

MT40A512M16HA-083E IT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,112

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

MT40A512M16HA-083E:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,712

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

MT41K512M8DA-093 IT:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存7,920

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MT41K256M16TW-093 IT:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

封装: 96-TFBGA

库存5,728

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT46H64M32LFKQ-5 IT:C

Micron Technology Inc.

IC DRAM 2G PARALLEL 167MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,304

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

167MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

-

MT40A512M8RH-075E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 1.33GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,152

DRAM

SDRAM - DDR4

4Gb (512M x 8)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

MT41K256M16LY-093:N

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

封装: 96-TFBGA

库存7,280

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT41K128M16JT-125 V:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

封装: 96-TFBGA

库存7,888

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

EDF8164A3PK-JD-F-R

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,592

DRAM

SDRAM - Mobile LPDDR3

8Gb (128M x 64)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDB8164B4PT-1DAT-F-R

Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,808

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

-

EDB4416BBBH-1DIT-F-R

Micron Technology Inc.

IC DRAM 4G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,176

DRAM

SDRAM - Mobile LPDDR2

4Gb (256M x 16)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

EDB5432BEPA-1DIT-F-R

Micron Technology Inc.

IC DRAM 512M PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,152

DRAM

SDRAM - Mobile LPDDR2

512Mb (16M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

ECF840AAACN-C2-Y3

Micron Technology Inc.

IC DRAM 8G PARALLEL

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,496

DRAM

SDRAM - Mobile LPDDR3

8Gb (512M x 16)

Parallel

-

1.14 V ~ 1.95 V

-

MT41K512M8V00HWC1-N002

Micron Technology Inc.

IC DRAM 4G PARALLEL

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,912

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT41K256M16V90BWC1

Micron Technology Inc.

IC DRAM 4G PARALLEL DIE

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,848

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT48LC16M16A2Y66AWC1

Micron Technology Inc.

IC DRAM 256M PARALLEL 133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,840

DRAM

SDRAM

256Mb (16M x 16)

Parallel

133MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT41K256M8V89CWC1

Micron Technology Inc.

IC DRAM 2G PARALLEL DIE

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,672

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT46H16M32LFT67M-N1003

Micron Technology Inc.

IC SDRAM MOBILE DDR 512M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,944

-

MT41K64M16V88AWC1

Micron Technology Inc.

IC DRAM 1G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,096

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MTA9ASF1G72HZ-2G6E1

Micron Technology Inc.

IC SDRAM DDR4 8GB SODIMM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,104

-

MTA8ATF51264HZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,672

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF51264HZ-2G1B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,248

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1067MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF51264AZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,888

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF51264AZ-2G1B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,416

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1067MHz

-

1.2V

0°C ~ 95°C (TC)

-