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                                IGBT 600V 55A 200W TO264 
                                    IGBT Type: -Voltage - Collector Emitter Breakdown (Max): 600VCurrent - Collector (Ic) (Max): 55ACurrent - Collector Pulsed (Icm): 110AVce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30APower - Max: 200WSwitching Energy: 700µJ (off)Input Type: StandardGate Charge: 100nCTd (on/off) @ 25°C: 30ns/90nsTest Condition: 480V, 30A, 4.7 Ohm, 15VReverse Recovery Time (trr): 50nsOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: TO-264-3, TO-264AASupplier Device Package: TO-264AA(IXSK) | 封装: TO-264-3, TO-264AA | 库存4,880 |  | 
                
            
                
                    
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                                MOSFET N-CH 100V 100A SOT-227B 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 100VCurrent - Continuous Drain (Id) @ 25°C: 100ADrive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 4mAGate Charge (Qg) (Max) @ Vgs: 180nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 360W (Tc)Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10VOperating Temperature: -40°C ~ 150°C (TJ)Mounting Type: Chassis MountSupplier Device Package: SOT-227BPackage / Case: SOT-227-4, miniBLOC | 封装: SOT-227-4, miniBLOC | 库存7,056 |  | 
                
            
                
                    
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                                MOSFET N-CH 600V 15A TO-247AD 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 600VCurrent - Continuous Drain (Id) @ 25°C: 15A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 4mAGate Charge (Qg) (Max) @ Vgs: 170nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 300W (Tc)Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-247AD (IXFH)Package / Case: TO-247-3 | 封装: TO-247-3 | 库存3,360 |  | 
                
            
                
                    
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                                MOSFET N-CH 100V 170A SOT-227B 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 100VCurrent - Continuous Drain (Id) @ 25°C: 170ADrive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 8mAGate Charge (Qg) (Max) @ Vgs: 515nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 600W (Tc)Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Chassis MountSupplier Device Package: SOT-227BPackage / Case: SOT-227-4, miniBLOC | 封装: SOT-227-4, miniBLOC | 库存6,016 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 600V 26A PLUS 247 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 600VCurrent - Continuous Drain (Id) @ 25°C: 26A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 4mAGate Charge (Qg) (Max) @ Vgs: 200nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 360W (Tc)Rds On (Max) @ Id, Vgs: 250 mOhm @ 13A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: PLUS247?-3Package / Case: TO-247-3 | 封装: TO-247-3 | 库存6,624 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 150V 180A TO-264 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 150VCurrent - Continuous Drain (Id) @ 25°C: 180A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5V @ 4mAGate Charge (Qg) (Max) @ Vgs: 240nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 830W (Tc)Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10VOperating Temperature: -55°C ~ 175°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-264AA (IXFK)Package / Case: TO-264-3, TO-264AA | 封装: TO-264-3, TO-264AA | 库存6,128 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 500V 30A TO-268 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 500VCurrent - Continuous Drain (Id) @ 25°C: 30A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 250µAGate Charge (Qg) (Max) @ Vgs: 240nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 400W (Tc)Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-268Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 库存5,584 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 150V 67A ISOPLUS247 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 150VCurrent - Continuous Drain (Id) @ 25°C: 67A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 4mAGate Charge (Qg) (Max) @ Vgs: 180nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 250W (Tc)Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: ISOPLUS247?Package / Case: ISOPLUS247? | 封装: ISOPLUS247? | 库存103,464 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 1200V 6A TO-268 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 1200VCurrent - Continuous Drain (Id) @ 25°C: 6A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5V @ 250µAGate Charge (Qg) (Max) @ Vgs: 56nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 300W (Tc)Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 3A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-268Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 库存4,176 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 150V 75A TO-247 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 150VCurrent - Continuous Drain (Id) @ 25°C: 75A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 250µAGate Charge (Qg) (Max) @ Vgs: 210nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 330W (Tc)Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-247 (IXTH)Package / Case: TO-247-3 | 封装: TO-247-3 | 库存111,864 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 100V 180A TO-263AA 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 100VCurrent - Continuous Drain (Id) @ 25°C: 180A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 250µAGate Charge (Qg) (Max) @ Vgs: 185nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 480W (Tc)Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10VOperating Temperature: -55°C ~ 175°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-263 (IXFA)Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 库存3,280 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                RF MOSFET N-CHANNEL DE150 
                                    Transistor Type: N-ChannelFrequency: 30MHzGain: -Voltage - Test: -Current Rating: 50µANoise Figure: -Current - Test: -Power - Output: 200WVoltage - Rated: 1000VPackage / Case: 6-SMD, Flat Lead Exposed PadSupplier Device Package: DE150 | 封装: 6-SMD, Flat Lead Exposed Pad | 库存6,444 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOD THYRISTOR DUAL 1600V Y1-CU 
                                    Structure: Series Connection - All SCRsNumber of SCRs, Diodes: 2 SCRsVoltage - Off State: 1600VCurrent - On State (It (AV)) (Max): 203ACurrent - On State (It (RMS)) (Max): 350AVoltage - Gate Trigger (Vgt) (Max): 2VCurrent - Gate Trigger (Igt) (Max): 150mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5800ACurrent - Hold (Ih) (Max): 150mAOperating Temperature: -40°C ~ 130°C (TJ)Mounting Type: Chassis MountPackage / Case: Y1-CU | 封装: Y1-CU | 库存3,392 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MODULE 1800V WC-500 
                                    Structure: Series Connection - SCR/DiodeNumber of SCRs, Diodes: 1 SCR, 1 DiodeVoltage - Off State: 1800VCurrent - On State (It (AV)) (Max): 700ACurrent - On State (It (RMS)) (Max): 1331AVoltage - Gate Trigger (Vgt) (Max): -Current - Gate Trigger (Igt) (Max): -Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHzCurrent - Hold (Ih) (Max): -Operating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: WC-500 | 封装: WC-500 | 库存2,848 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MODULE AC CTLR 3PH 1600V PWS-F 
                                    Structure: 3-Phase Controller - All SCRsNumber of SCRs, Diodes: 6 SCRsVoltage - Off State: 1600VCurrent - On State (It (AV)) (Max): 23ACurrent - On State (It (RMS)) (Max): 36AVoltage - Gate Trigger (Vgt) (Max): 1VCurrent - Gate Trigger (Igt) (Max): 100mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560ACurrent - Hold (Ih) (Max): 150mAOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: Module | 封装: Module | 库存3,920 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE SCHOTTKY 60V 1A SMA 
                                    Diode Type: SchottkyVoltage - DC Reverse (Vr) (Max): 60VCurrent - Average Rectified (Io): 1AVoltage - Forward (Vf) (Max) @ If: 580mV @ 1ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 100µA @ 60VCapacitance @ Vr, F: -Mounting Type: Surface MountPackage / Case: DO-214AC, SMASupplier Device Package: SMA (DO-214AC)Operating Temperature - Junction: -55°C ~ 150°C | 封装: DO-214AC, SMA | 库存3,344 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE RECT 2200V 30A D2PAK-HV 
                                    Diode Type: StandardVoltage - DC Reverse (Vr) (Max): 2200VCurrent - Average Rectified (Io): 30AVoltage - Forward (Vf) (Max) @ If: 1.26V @ 30ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 40µA @ 2200VCapacitance @ Vr, F: 7pF @ 700V, 1MHzMounting Type: Surface MountPackage / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263ABSupplier Device Package: TO-263 (D2Pak)Operating Temperature - Junction: -55°C ~ 150°C | 封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 库存14,916 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE ARRAY 800V 10A ISOPLUS220 
                                    Diode Configuration: 1 Pair Series ConnectionDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 800VCurrent - Average Rectified (Io) (per Diode): 10AVoltage - Forward (Vf) (Max) @ If: 1.53V @ 10ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 30nsCurrent - Reverse Leakage @ Vr: 60µA @ 800VOperating Temperature - Junction: -40°C ~ 175°CMounting Type: Through HolePackage / Case: ISOPLUS220?Supplier Device Package: ISOPLUS220? | 封装: ISOPLUS220? | 库存4,336 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MODULE 2KV 270A Y1-CU 
                                    Diode Configuration: 1 Pair Series ConnectionDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 2000VCurrent - Average Rectified (Io) (per Diode): 270AVoltage - Forward (Vf) (Max) @ If: 1.4V @ 600ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 30mA @ 2000VOperating Temperature - Junction: -Mounting Type: Chassis MountPackage / Case: Y1-CUSupplier Device Package: Y1-CU | 封装: Y1-CU | 库存4,176 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MODULE 1.6KV 270A Y1-CU 
                                    Diode Configuration: 1 Pair Series ConnectionDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 1600VCurrent - Average Rectified (Io) (per Diode): 270AVoltage - Forward (Vf) (Max) @ If: 1.4V @ 600ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 30mA @ 1600VOperating Temperature - Junction: -Mounting Type: Chassis MountPackage / Case: Y1-CUSupplier Device Package: Y1-CU | 封装: Y1-CU | 库存6,224 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MODULE 1.2KV 30A SOT227B 
                                    Diode Configuration: 2 IndependentDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 1200VCurrent - Average Rectified (Io) (per Diode): 30AVoltage - Forward (Vf) (Max) @ If: 2.72V @ 30ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 40nsCurrent - Reverse Leakage @ Vr: 250µA @ 1200VOperating Temperature - Junction: -Mounting Type: Chassis MountPackage / Case: SOT-227-4, miniBLOCSupplier Device Package: SOT-227B | 封装: SOT-227-4, miniBLOC | 库存5,056 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE ARRAY GP 1200V 26A TO247AD 
                                    Diode Configuration: 1 Pair Common CathodeDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 1200VCurrent - Average Rectified (Io) (per Diode): 26AVoltage - Forward (Vf) (Max) @ If: 2.55V @ 30ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 60nsCurrent - Reverse Leakage @ Vr: 750µA @ 1200VOperating Temperature - Junction: -40°C ~ 150°CMounting Type: Through HolePackage / Case: TO-3P-3 Full PackSupplier Device Package: TO-247AD | 封装: TO-3P-3 Full Pack | 库存103,464 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                RECT BRIDGE 3PH 1600V 72A FO-F-B 
                                    Diode Type: Three PhaseTechnology: StandardVoltage - Peak Reverse (Max): 1600VCurrent - Average Rectified (Io): 72AVoltage - Forward (Vf) (Max) @ If: 1.9V @ 150ACurrent - Reverse Leakage @ Vr: 300µA @ 1600VOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: FO-F-BSupplier Device Package: FO-F-B | 封装: FO-F-B | 库存6,704 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MONO SOLAR CELL 22MM X 35MM 
                                    Power (Watts) - Max: 111mWCurrent @ Pmpp: 22.3mAVoltage @ Pmpp: 5.01VCurrent Short Circuit (Isc): 25mAType: MonocrystallineVoltage - Open Circuit: 6.3VOperating Temperature: -Package / Case: Cell (10)Size / Dimension: 0.866" L x 1.378" W x 0.079" H (22.00mm x 35.00mm x 2.00mm) | 封装: Cell (10) | 库存14,526 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DISC IGBT PT-MID FREQUENCY TO-24 
                                    IGBT Type: PTVoltage - Collector Emitter Breakdown (Max): 1200 VCurrent - Collector (Ic) (Max): 60 ACurrent - Collector Pulsed (Icm): 150 AVce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30APower - Max: 300 WSwitching Energy: 3.47mJ (on), 2.16mJ (off)Input Type: StandardGate Charge: 87 nCTd (on/off) @ 25°C: 16ns/127nsTest Condition: 960V, 30A, 5Ohm, 15VReverse Recovery Time (trr): 37 nsOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: TO-247-3Supplier Device Package: TO-247AD | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET P-CH 65V 120A TO263 
                                    FET Type: P-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 65 VCurrent - Continuous Drain (Id) @ 25°C: 120A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 250µAGate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 VInput Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 VVgs (Max): ±15VFET Feature: -Power Dissipation (Max): 298W (Tc)Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-263 (D2PAK)Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 3.6KV W107 
                                    Voltage - Off State: 3.6 kVVoltage - Gate Trigger (Vgt) (Max): -Current - Gate Trigger (Igt) (Max): -Voltage - On State (Vtm) (Max): -Current - On State (It (AV)) (Max): 5415 ACurrent - On State (It (RMS)) (Max): -Current - Hold (Ih) (Max): -Current - Off State (Max): -Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50HzSCR Type: Standard RecoveryOperating Temperature: -Mounting Type: Chassis MountPackage / Case: TO-200AFSupplier Device Package: W107 | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR MODULE 1.6KV 700A COMPACK 
                                    Structure: Series Connection - All SCRsNumber of SCRs, Diodes: 2 SCRsVoltage - Off State: 1.6 kVCurrent - On State (It (AV)) (Max): 700 ACurrent - On State (It (RMS)) (Max): 1100 AVoltage - Gate Trigger (Vgt) (Max): 2 VCurrent - Gate Trigger (Igt) (Max): 300 mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500ACurrent - Hold (Ih) (Max): 300 mAOperating Temperature: -40°C ~ 140°C (TJ)Mounting Type: Chassis MountPackage / Case: ComPack | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IGBT 
                                    IGBT Type: -Voltage - Collector Emitter Breakdown (Max): -Current - Collector (Ic) (Max): -Current - Collector Pulsed (Icm): -Vce(on) (Max) @ Vge, Ic: -Power - Max: -Switching Energy: -Input Type: -Gate Charge: -Td (on/off) @ 25°C: -Test Condition: -Reverse Recovery Time (trr): -Operating Temperature: -Mounting Type: -Package / Case: -Supplier Device Package: - | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 300V 210A TO264 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 300 VCurrent - Continuous Drain (Id) @ 25°C: 210A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 8mAGate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 VInput Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 1250W (Tc)Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-264Package / Case: TO-264-3, TO-264AA | 封装: - | Request a Quote |  |