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                                IGBT 3000V 
                                    IGBT Type: -Voltage - Collector Emitter Breakdown (Max): 3000VCurrent - Collector (Ic) (Max): 50ACurrent - Collector Pulsed (Icm): 430AVce(on) (Max) @ Vge, Ic: 6V @ 15V, 20APower - Max: 417WSwitching Energy: 23mJ (on), 2.6mJ (off)Input Type: StandardGate Charge: 425nCTd (on/off) @ 25°C: 33ns/370nsTest Condition: 1500V, 20A, 3 Ohm, 15VReverse Recovery Time (trr): 864nsOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: ISOPLUSi5-Pak?Supplier Device Package: ISOPLUSi5-Pak? | 封装: ISOPLUSi5-Pak? | 库存7,792 |  | 
                
            
                
                    
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                                IGBT 1200V 20A 85W TO268 
                                    IGBT Type: PTVoltage - Collector Emitter Breakdown (Max): 1200VCurrent - Collector (Ic) (Max): 20ACurrent - Collector Pulsed (Icm): -Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10APower - Max: 85WSwitching Energy: 1.1mJ (on), 1.1mJ (off)Input Type: StandardGate Charge: 27nCTd (on/off) @ 25°C: -Test Condition: 600V, 10A, 100 Ohm, 15VReverse Recovery Time (trr): 350nsOperating Temperature: -40°C ~ 150°C (TJ)Mounting Type: Surface MountPackage / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AASupplier Device Package: TO-268AA | 封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 库存5,664 |  | 
                
            
                
                    
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                                IGBT 1000V 24A 100W TO263AA 
                                    IGBT Type: -Voltage - Collector Emitter Breakdown (Max): 1000VCurrent - Collector (Ic) (Max): 24ACurrent - Collector Pulsed (Icm): 48AVce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12APower - Max: 100WSwitching Energy: 2.5mJ (off)Input Type: StandardGate Charge: 65nCTd (on/off) @ 25°C: 100ns/850nsTest Condition: 800V, 12A, 120 Ohm, 15VReverse Recovery Time (trr): -Operating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountPackage / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263ABSupplier Device Package: TO-263 (IXGA) | 封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 库存6,608 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MODULE IGBT CBI E2 
                                    IGBT Type: NPTConfiguration: Three Phase Inverter with BrakeVoltage - Collector Emitter Breakdown (Max): 600VCurrent - Collector (Ic) (Max): 75APower - Max: 250WVce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50ACurrent - Collector Cutoff (Max): 800µAInput Capacitance (Cies) @ Vce: 2.8nF @ 25VInput: Three Phase Bridge RectifierNTC Thermistor: YesOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: E2Supplier Device Package: E2 | 封装: E2 | 库存3,760 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IC TRANS BIPO 1700V SOT-227 
                                    IGBT Type: -Configuration: SingleVoltage - Collector Emitter Breakdown (Max): 1700VCurrent - Collector (Ic) (Max): 42APower - Max: 312WVce(on) (Max) @ Vge, Ic: 6V @ 15V, 21ACurrent - Collector Cutoff (Max): 50µAInput Capacitance (Cies) @ Vce: 3.5nF @ 25VInput: StandardNTC Thermistor: NoOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Chassis MountPackage / Case: SOT-227-4, miniBLOCSupplier Device Package: SOT-227B | 封装: SOT-227-4, miniBLOC | 库存6,016 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 600V 30A PLUS220-SMD 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 600VCurrent - Continuous Drain (Id) @ 25°C: 30A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5V @ 250µAGate Charge (Qg) (Max) @ Vgs: 82nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 540W (Tc)Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: PLUS-220SMDPackage / Case: PLUS-220SMD | 封装: PLUS-220SMD | 库存6,016 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 500V 44A TO-264AA 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 500VCurrent - Continuous Drain (Id) @ 25°C: 44A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 8mAGate Charge (Qg) (Max) @ Vgs: 270nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 500W (Tc)Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-264AA (IXFK)Package / Case: TO-264-3, TO-264AA | 封装: TO-264-3, TO-264AA | 库存126,828 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 800V 50A PLUS264 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 800VCurrent - Continuous Drain (Id) @ 25°C: 50A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5.5V @ 8mAGate Charge (Qg) (Max) @ Vgs: 260nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 1135W (Tc)Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: PLUS264?Package / Case: TO-264-3, TO-264AA | 封装: TO-264-3, TO-264AA | 库存2,560 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 600V 90A PLUS247 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 600VCurrent - Continuous Drain (Id) @ 25°C: 90A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 8mAGate Charge (Qg) (Max) @ Vgs: 210nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 1100W (Tc)Rds On (Max) @ Id, Vgs: 38 mOhm @ 45A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: PLUS247?-3Package / Case: TO-247-3 | 封装: TO-247-3 | 库存3,664 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 500V 26A TO-3P 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 500VCurrent - Continuous Drain (Id) @ 25°C: 26A (Tc)Drive Voltage (Max Rds On,  Min Rds On): -Vgs(th) (Max) @ Id: -Gate Charge (Qg) (Max) @ Vgs: -Input Capacitance (Ciss) (Max) @ Vds: -Vgs (Max): -FET Feature: -Power Dissipation (Max): -Rds On (Max) @ Id, Vgs: -Operating Temperature: -Mounting Type: Through HoleSupplier Device Package: TO-3PPackage / Case: TO-3P-3, SC-65-3 | 封装: TO-3P-3, SC-65-3 | 库存3,504 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 1000V 700MA TO-220 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 1000VCurrent - Continuous Drain (Id) @ 25°C: 700mA (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 25µAGate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 260pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 25W (Tc)Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-220ABPackage / Case: TO-220-3 | 封装: TO-220-3 | 库存10,008 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 800V 3.6A TO-263 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 800VCurrent - Continuous Drain (Id) @ 25°C: 3.6A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5.5V @ 100µAGate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 750pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 100W (Tc)Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-263 (IXTA)Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 库存4,656 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 500V 80A SOT-227B 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 500VCurrent - Continuous Drain (Id) @ 25°C: 80ADrive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 8mAGate Charge (Qg) (Max) @ Vgs: 380nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 780W (Tc)Rds On (Max) @ Id, Vgs: 55 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Chassis MountSupplier Device Package: SOT-227BPackage / Case: SOT-227-4, miniBLOC | 封装: SOT-227-4, miniBLOC | 库存2,896 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                850V/90A ULT JUNC X-C HIPERFET P 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 850VCurrent - Continuous Drain (Id) @ 25°C: 90A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5.5V @ 8mAGate Charge (Qg) (Max) @ Vgs: 340nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 1200W (Tc)Rds On (Max) @ Id, Vgs: 41 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Chassis MountSupplier Device Package: SOT-227BPackage / Case: SOT-227-4, miniBLOC | 封装: SOT-227-4, miniBLOC | 库存4,992 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 1000V 14A TO-247AD 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 1000VCurrent - Continuous Drain (Id) @ 25°C: 14A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5.5V @ 4mAGate Charge (Qg) (Max) @ Vgs: 83nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 500W (Tc)Rds On (Max) @ Id, Vgs: 950 mOhm @ 7A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-247AD (IXFH)Package / Case: TO-247-3 | 封装: TO-247-3 | 库存5,120 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR PHASE CONTROL 1400V 60A TO65 
                                    Voltage - Off State: 1400VVoltage - Gate Trigger (Vgt) (Max): 1.5VCurrent - Gate Trigger (Igt) (Max): 100mAVoltage - On State (Vtm) (Max): 1.5VCurrent - On State (It (AV)) (Max): 69ACurrent - On State (It (RMS)) (Max): 120ACurrent - Hold (Ih) (Max): 80mACurrent - Off State (Max): 10mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1340ASCR Type: Standard RecoveryOperating Temperature: -40°C ~ 125°CMounting Type: Chassis, Stud MountPackage / Case: TO-208AC, TO-65-3, StudSupplier Device Package: TO-208AC (TO-65) | 封装: TO-208AC, TO-65-3, Stud | 库存5,200 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOD THYRISTOR DUAL 800V ECO-PAC2 
                                    Structure: Independent - All SCRsNumber of SCRs, Diodes: 2 SCRsVoltage - Off State: 800VCurrent - On State (It (AV)) (Max): 105ACurrent - On State (It (RMS)) (Max): 180AVoltage - Gate Trigger (Vgt) (Max): 1.5VCurrent - Gate Trigger (Igt) (Max): 150mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400ACurrent - Hold (Ih) (Max): 200mAOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: ECO-PAC2 | 封装: ECO-PAC2 | 库存4,464 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOD THYRISTOR DUAL 12KV 
                                    Structure: Series Connection - All SCRsNumber of SCRs, Diodes: 2 SCRsVoltage - Off State: 1200VCurrent - On State (It (AV)) (Max): 35ACurrent - On State (It (RMS)) (Max): 55AVoltage - Gate Trigger (Vgt) (Max): 1.5VCurrent - Gate Trigger (Igt) (Max): 78mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560ACurrent - Hold (Ih) (Max): 200mAOperating Temperature: -40°C ~ 140°C (TJ)Mounting Type: Chassis MountPackage / Case: TO-240AA | 封装: TO-240AA | 库存7,584 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE ARRAY 1600V 43A ISOPLUS247 
                                    Diode Configuration: 1 Pair Series ConnectionDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 1600VCurrent - Average Rectified (Io) (per Diode): 43AVoltage - Forward (Vf) (Max) @ If: 1.23V @ 40ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 3mA @ 1600VOperating Temperature - Junction: -40°C ~ 175°CMounting Type: Through HolePackage / Case: ISOPLUS247?Supplier Device Package: ISOPLUS247? | 封装: ISOPLUS247? | 库存4,800 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE ARRAY SCHOTTKY 60V TO220FP 
                                    Diode Configuration: 1 Pair Common CathodeDiode Type: SchottkyVoltage - DC Reverse (Vr) (Max): 60VCurrent - Average Rectified (Io) (per Diode): 10AVoltage - Forward (Vf) (Max) @ If: 730mV @ 10ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 6mA @ 60VOperating Temperature - Junction: -55°C ~ 175°CMounting Type: Through HolePackage / Case: TO-220-3 Full Pack, Isolated TabSupplier Device Package: TO-220ABFP | 封装: TO-220-3 Full Pack, Isolated Tab | 库存2,336 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MODULE 150V 100A SOT227B 
                                    Diode Configuration: 2 IndependentDiode Type: SchottkyVoltage - DC Reverse (Vr) (Max): 150VCurrent - Average Rectified (Io) (per Diode): 100AVoltage - Forward (Vf) (Max) @ If: 910mV @ 100ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 4mA @ 150VOperating Temperature - Junction: -Mounting Type: Chassis MountPackage / Case: SOT-227-4, miniBLOCSupplier Device Package: SOT-227B | 封装: SOT-227-4, miniBLOC | 库存5,424 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IC MOSFET DRIVER LS 8A SGL 8SOIC 
                                    Driven Configuration: Low-SideChannel Type: SingleNumber of Drivers: 1Gate Type: IGBT, N-Channel, P-Channel MOSFETVoltage - Supply: 4.5 V ~ 25 VLogic Voltage - VIL, VIH: 0.8V, 3.5VCurrent - Peak Output (Source, Sink): 8A, 8AInput Type: Non-InvertingHigh Side Voltage - Max (Bootstrap): -Rise / Fall Time (Typ): 14ns, 15nsOperating Temperature: -40°C ~ 150°C (TJ)Mounting Type: Surface MountPackage / Case: 8-SOIC (0.154", 3.90mm Width)Supplier Device Package: 8-SOIC | 封装: 8-SOIC (0.154", 3.90mm Width) | 库存68,136 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 48A PLUS247-3 
                                    FET Type: -Technology: -Drain to Source Voltage (Vdss): -Current - Continuous Drain (Id) @ 25°C: -Drive Voltage (Max Rds On,  Min Rds On): -Vgs(th) (Max) @ Id: -Gate Charge (Qg) (Max) @ Vgs: -Input Capacitance (Ciss) (Max) @ Vds: -Vgs (Max): -FET Feature: -Power Dissipation (Max): -Rds On (Max) @ Id, Vgs: -Operating Temperature: -Mounting Type: -Supplier Device Package: -Package / Case: - | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MOD GP 1600V 100A SOT227B 
                                    Diode Configuration: 2 IndependentDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 1600 VCurrent - Average Rectified (Io) (per Diode): 100AVoltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 200 µA @ 1600 VOperating Temperature - Junction: -40°C ~ 150°CMounting Type: Chassis MountPackage / Case: SOT-227-4, miniBLOCSupplier Device Package: SOT-227B | 封装: - | 库存42 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 3KV W46 
                                    Voltage - Off State: 3 kVVoltage - Gate Trigger (Vgt) (Max): -Current - Gate Trigger (Igt) (Max): -Voltage - On State (Vtm) (Max): -Current - On State (It (AV)) (Max): 2418 ACurrent - On State (It (RMS)) (Max): -Current - Hold (Ih) (Max): -Current - Off State (Max): -Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50HzSCR Type: Standard RecoveryOperating Temperature: -Mounting Type: Chassis MountPackage / Case: TO-200AFSupplier Device Package: W46 | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 600V 50A SMPD 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 600 VCurrent - Continuous Drain (Id) @ 25°C: 50A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 3.5V @ 3mAGate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 VInput Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): -Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: ISOPLUS-SMPD™.BPackage / Case: 9-SMD Module | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 
                                    Voltage - Off State: 1.8 kVVoltage - Gate Trigger (Vgt) (Max): -Current - Gate Trigger (Igt) (Max): -Voltage - On State (Vtm) (Max): 1.09 VCurrent - On State (It (AV)) (Max): 676 ACurrent - On State (It (RMS)) (Max): -Current - Hold (Ih) (Max): -Current - Off State (Max): -Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A @ 50HzSCR Type: Standard RecoveryOperating Temperature: 125°C (TJ)Mounting Type: Chassis MountPackage / Case: TO-200AA, A-PUKSupplier Device Package: TO-200 | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 1.6KV 47A TO263 
                                    Voltage - Off State: 1.6 kVVoltage - Gate Trigger (Vgt) (Max): 1.3 VCurrent - Gate Trigger (Igt) (Max): 28 mAVoltage - On State (Vtm) (Max): 1.42 VCurrent - On State (It (AV)) (Max): 30 ACurrent - On State (It (RMS)) (Max): 47 ACurrent - Hold (Ih) (Max): 60 mACurrent - Off State (Max): -Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280ASCR Type: Standard RecoveryOperating Temperature: -40°C ~ 150°C (TJ)Mounting Type: Surface MountPackage / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263ABSupplier Device Package: TO-263HV | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 2.8KV W119 
                                    Voltage - Off State: 2.8 kVVoltage - Gate Trigger (Vgt) (Max): -Current - Gate Trigger (Igt) (Max): -Voltage - On State (Vtm) (Max): -Current - On State (It (AV)) (Max): 7535 ACurrent - On State (It (RMS)) (Max): -Current - Hold (Ih) (Max): -Current - Off State (Max): -Current - Non Rep. Surge 50, 60Hz (Itsm): 110000A @ 50HzSCR Type: Standard RecoveryOperating Temperature: -Mounting Type: Chassis MountPackage / Case: TO-200AFSupplier Device Package: W119 | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IGBT MODULE - PHASELEG SIMBUS F- 
                                    IGBT Type: -Configuration: -Voltage - Collector Emitter Breakdown (Max): -Current - Collector (Ic) (Max): -Power - Max: -Vce(on) (Max) @ Vge, Ic: -Current - Collector Cutoff (Max): -Input Capacitance (Cies) @ Vce: -Input: -NTC Thermistor: -Operating Temperature: -Mounting Type: -Package / Case: -Supplier Device Package: - | 封装: - | Request a Quote |  |