|  |  | IXYS | 
                                IGBT 600V 40A 150W TO220 
                                    IGBT Type: PTVoltage - Collector Emitter Breakdown (Max): 600VCurrent - Collector (Ic) (Max): 40ACurrent - Collector Pulsed (Icm): 100AVce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12APower - Max: 150WSwitching Energy: 160µJ (on), 120µJ (off)Input Type: StandardGate Charge: 24nCTd (on/off) @ 25°C: 18ns/73nsTest Condition: 400V, 12A, 22 Ohm, 15VReverse Recovery Time (trr): -Operating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: TO-220-3Supplier Device Package: TO-220AB | 封装: TO-220-3 | 库存6,592 |  | 
                
            
                
                    
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                                IGBT 600V 60A 200W TO247AD 
                                    IGBT Type: -Voltage - Collector Emitter Breakdown (Max): 600VCurrent - Collector (Ic) (Max): 60ACurrent - Collector Pulsed (Icm): 120AVce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32APower - Max: 200WSwitching Energy: 600µJ (off)Input Type: StandardGate Charge: 110nCTd (on/off) @ 25°C: 25ns/100nsTest Condition: 480V, 32A, 4.7 Ohm, 15VReverse Recovery Time (trr): 50nsOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: TO-247-3Supplier Device Package: TO-247AD (IXGH) | 封装: TO-247-3 | 库存130,800 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MODULE IGBT CBI E3 
                                    IGBT Type: TrenchConfiguration: Three Phase Inverter with BrakeVoltage - Collector Emitter Breakdown (Max): 1700VCurrent - Collector (Ic) (Max): 113APower - Max: 450WVce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75ACurrent - Collector Cutoff (Max): 800µAInput Capacitance (Cies) @ Vce: 6.6nF @ 25VInput: Three Phase Bridge RectifierNTC Thermistor: YesOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: E3Supplier Device Package: E3 | 封装: E3 | 库存4,048 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IGBT 6000V SOT227 
                                    IGBT Type: -Configuration: -Voltage - Collector Emitter Breakdown (Max): -Current - Collector (Ic) (Max): -Power - Max: -Vce(on) (Max) @ Vge, Ic: -Current - Collector Cutoff (Max): -Input Capacitance (Cies) @ Vce: -Input: -NTC Thermistor: -Operating Temperature: -Mounting Type: -Package / Case: -Supplier Device Package: - | 封装: - | 库存6,000 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH ISOPLUS247 
                                    FET Type: -Technology: -Drain to Source Voltage (Vdss): -Current - Continuous Drain (Id) @ 25°C: -Drive Voltage (Max Rds On,  Min Rds On): -Vgs(th) (Max) @ Id: -Gate Charge (Qg) (Max) @ Vgs: -Input Capacitance (Ciss) (Max) @ Vds: -Vgs (Max): -FET Feature: -Power Dissipation (Max): -Rds On (Max) @ Id, Vgs: -Operating Temperature: -Mounting Type: -Supplier Device Package: -Package / Case: - | 封装: - | 库存5,040 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 85V 200A TO-263 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 85VCurrent - Continuous Drain (Id) @ 25°C: 200A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 250µAGate Charge (Qg) (Max) @ Vgs: 152nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 480W (Tc)Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10VOperating Temperature: -55°C ~ 175°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-263 (IXTA)Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 库存6,432 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 500V 26A PLUS220 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 500VCurrent - Continuous Drain (Id) @ 25°C: 26A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5.5V @ 4mAGate Charge (Qg) (Max) @ Vgs: 60nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 400W (Tc)Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: PLUS220Package / Case: TO-220-3, Short Tab | 封装: TO-220-3, Short Tab | 库存6,800 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 1KV 9.5A ISOPLUS247 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 1000VCurrent - Continuous Drain (Id) @ 25°C: 9.5A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5V @ 4mAGate Charge (Qg) (Max) @ Vgs: 83nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25VVgs (Max): ±30VFET Feature: -Power Dissipation (Max): 200W (Tc)Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 7A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: ISOPLUS247?Package / Case: ISOPLUS247? | 封装: ISOPLUS247? | 库存7,808 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 300V 52A TO-268 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 300VCurrent - Continuous Drain (Id) @ 25°C: 52A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 4mAGate Charge (Qg) (Max) @ Vgs: 150nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 360W (Tc)Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-268Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 库存7,520 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 100V 16A TO-247 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 100VCurrent - Continuous Drain (Id) @ 25°C: 16A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 0VVgs(th) (Max) @ Id: -Gate Charge (Qg) (Max) @ Vgs: 225nC @ 5VInput Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25VVgs (Max): ±20VFET Feature: Depletion ModePower Dissipation (Max): 830W (Tc)Rds On (Max) @ Id, Vgs: 64 mOhm @ 8A, 0VOperating Temperature: -55°C ~ 175°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-247 (IXTH)Package / Case: TO-247-3 | 封装: TO-247-3 | 库存145,356 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 150V 56A TO-3P 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 150VCurrent - Continuous Drain (Id) @ 25°C: 56A (Tc)Drive Voltage (Max Rds On,  Min Rds On): -Vgs(th) (Max) @ Id: -Gate Charge (Qg) (Max) @ Vgs: -Input Capacitance (Ciss) (Max) @ Vds: -Vgs (Max): -FET Feature: -Power Dissipation (Max): -Rds On (Max) @ Id, Vgs: -Operating Temperature: -Mounting Type: Through HoleSupplier Device Package: TO-3PPackage / Case: TO-3P-3, SC-65-3 | 封装: TO-3P-3, SC-65-3 | 库存5,008 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 1000V 2A TO-263 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 1000VCurrent - Continuous Drain (Id) @ 25°C: 2A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 100µAGate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 655pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 86W (Tc)Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountSupplier Device Package: TO-263 (IXTA)Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 库存5,376 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 250V 120A TO-264 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 250VCurrent - Continuous Drain (Id) @ 25°C: 120A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5V @ 500µAGate Charge (Qg) (Max) @ Vgs: 185nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 700W (Tc)Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10VOperating Temperature: -55°C ~ 175°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-264 (IXTK)Package / Case: TO-264-3, TO-264AA | 封装: TO-264-3, TO-264AA | 库存7,392 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH 200V 188A SOT-227B 
                                    FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 200VCurrent - Continuous Drain (Id) @ 25°C: 188ADrive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4.5V @ 8mAGate Charge (Qg) (Max) @ Vgs: 255nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 1070W (Tc)Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 105A, 10VOperating Temperature: -55°C ~ 175°C (TJ)Mounting Type: Chassis MountSupplier Device Package: SOT-227BPackage / Case: SOT-227-4, miniBLOC | 封装: SOT-227-4, miniBLOC | 库存6,256 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET P-CH 600V 10A TO-247AD 
                                    FET Type: P-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 600VCurrent - Continuous Drain (Id) @ 25°C: 10A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 5V @ 250µAGate Charge (Qg) (Max) @ Vgs: 160nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 300W (Tc)Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-247 (IXTH)Package / Case: TO-247-3 | 封装: TO-247-3 | 库存5,776 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET P-CH 500V 20A TO-247 
                                    FET Type: P-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 500VCurrent - Continuous Drain (Id) @ 25°C: 20A (Tc)Drive Voltage (Max Rds On,  Min Rds On): 10VVgs(th) (Max) @ Id: 4V @ 250µAGate Charge (Qg) (Max) @ Vgs: 103nC @ 10VInput Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25VVgs (Max): ±20VFET Feature: -Power Dissipation (Max): 460W (Tc)Rds On (Max) @ Id, Vgs: 450 mOhm @ 10A, 10VOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HoleSupplier Device Package: TO-247 (IXTH)Package / Case: TO-247-3 | 封装: TO-247-3 | 库存14,988 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                RECT BRIDGE 1PH 1200V FO-T-A 
                                    Structure: Bridge, Single Phase - All SCRsNumber of SCRs, Diodes: 4 SCRsVoltage - Off State: 1200VCurrent - On State (It (AV)) (Max): 53ACurrent - On State (It (RMS)) (Max): -Voltage - Gate Trigger (Vgt) (Max): 1.5VCurrent - Gate Trigger (Igt) (Max): 100mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600ACurrent - Hold (Ih) (Max): 200mAOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: FO-T-A | 封装: FO-T-A | 库存7,152 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                RECT BRIDGE 1PH 800V V1-A-PAK 
                                    Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)Number of SCRs, Diodes: 2 SCRs, 4 DiodesVoltage - Off State: 800VCurrent - On State (It (AV)) (Max): 36ACurrent - On State (It (RMS)) (Max): -Voltage - Gate Trigger (Vgt) (Max): 1VCurrent - Gate Trigger (Igt) (Max): 65mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350ACurrent - Hold (Ih) (Max): 100mAOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: V1A-PAK | 封装: V1A-PAK | 库存2,608 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MODULE AC CTLR 800V ECO-PAC1 
                                    Structure: 3-Phase Controller - All SCRsNumber of SCRs, Diodes: 6 SCRsVoltage - Off State: 800VCurrent - On State (It (AV)) (Max): 16ACurrent - On State (It (RMS)) (Max): 35AVoltage - Gate Trigger (Vgt) (Max): 1.5VCurrent - Gate Trigger (Igt) (Max): 65mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210ACurrent - Hold (Ih) (Max): 50mAOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: Module | 封装: Module | 库存4,656 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOD THYRISTOR DUAL 1200V I4-PAC 
                                    Structure: Series Connection - All SCRsNumber of SCRs, Diodes: 2 SCRsVoltage - Off State: 1200VCurrent - On State (It (AV)) (Max): 40ACurrent - On State (It (RMS)) (Max): 63AVoltage - Gate Trigger (Vgt) (Max): 1.5VCurrent - Gate Trigger (Igt) (Max): 50mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700ACurrent - Hold (Ih) (Max): 100mAOperating Temperature: -40°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: i4-Pac?-5 | 封装: i4-Pac?-5 | 库存2,100 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOD THYRISTOR DUAL 800V Y4-M6 
                                    Structure: Series Connection - All SCRsNumber of SCRs, Diodes: 2 SCRsVoltage - Off State: 800VCurrent - On State (It (AV)) (Max): 190ACurrent - On State (It (RMS)) (Max): 300AVoltage - Gate Trigger (Vgt) (Max): 2.5VCurrent - Gate Trigger (Igt) (Max): 150mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400ACurrent - Hold (Ih) (Max): 200mAOperating Temperature: -40°C ~ 125°C (TJ)Mounting Type: Chassis MountPackage / Case: Y4-M6 | 封装: Y4-M6 | 库存7,152 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE SCHOTTKY 40V 2A SMB 
                                    Diode Type: SchottkyVoltage - DC Reverse (Vr) (Max): 40VCurrent - Average Rectified (Io): 2AVoltage - Forward (Vf) (Max) @ If: 500mV @ 2ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 100µA @ 40VCapacitance @ Vr, F: -Mounting Type: Surface MountPackage / Case: DO-214AA, SMBSupplier Device Package: SMB (DO-214AA)Operating Temperature - Junction: -55°C ~ 150°C | 封装: DO-214AA, SMB | 库存6,368 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE MODULE 30KV 1.3A 
                                    Diode Configuration: 1 Pair Series ConnectionDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 30000VCurrent - Average Rectified (Io) (per Diode): 1.3AVoltage - Forward (Vf) (Max) @ If: 22V @ 2ASpeed: Standard Recovery >500ns, > 200mA (Io)Reverse Recovery Time (trr): -Current - Reverse Leakage @ Vr: 500µA @ 30000VOperating Temperature - Junction: -Mounting Type: Chassis MountPackage / Case: ModuleSupplier Device Package: Module | 封装: Module | 库存3,840 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                DIODE BRIDGE 50A 1400V PWS-A 
                                    Diode Type: Single PhaseTechnology: StandardVoltage - Peak Reverse (Max): 1400VCurrent - Average Rectified (Io): 50AVoltage - Forward (Vf) (Max) @ If: 1.6V @ 150ACurrent - Reverse Leakage @ Vr: 300µA @ 1400VOperating Temperature: -40°C ~ 150°C (TJ)Mounting Type: Chassis MountPackage / Case: PWS-ASupplier Device Package: PWS-A | 封装: PWS-A | 库存7,376 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IC DRVR MOSF/IGBT 30A TO220-5 
                                    Driven Configuration: Low-SideChannel Type: SingleNumber of Drivers: 1Gate Type: IGBT, N-Channel, P-Channel MOSFETVoltage - Supply: 8.5 V ~ 35 VLogic Voltage - VIL, VIH: 0.8V, 3.5VCurrent - Peak Output (Source, Sink): 30A, 30AInput Type: InvertingHigh Side Voltage - Max (Bootstrap): -Rise / Fall Time (Typ): 18ns, 16nsOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Through HolePackage / Case: TO-220-5Supplier Device Package: TO-220-5 | 封装: TO-220-5 | 库存5,280 |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 1.2KV 2718A WP1 
                                    Voltage - Off State: 1.2 kVVoltage - Gate Trigger (Vgt) (Max): 3 VCurrent - Gate Trigger (Igt) (Max): 300 mAVoltage - On State (Vtm) (Max): 1.99 VCurrent - On State (It (AV)) (Max): 1366 ACurrent - On State (It (RMS)) (Max): 2718 ACurrent - Hold (Ih) (Max): 1 ACurrent - Off State (Max): 100 mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50HzSCR Type: Standard RecoveryOperating Temperature: -40°C ~ 125°CMounting Type: Chassis MountPackage / Case: TO-200AB, B-PuKSupplier Device Package: WP1 | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IGBT PT 600V 64A TO268 
                                    IGBT Type: PTVoltage - Collector Emitter Breakdown (Max): 600 VCurrent - Collector (Ic) (Max): 64 ACurrent - Collector Pulsed (Icm): 400 AVce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50APower - Max: 460 WSwitching Energy: 1.5mJ (on), 1mJ (off)Input Type: StandardGate Charge: 168 nCTd (on/off) @ 25°C: 25ns/138nsTest Condition: 480V, 50A, 3Ohm, 15VReverse Recovery Time (trr): 41 nsOperating Temperature: -55°C ~ 150°C (TJ)Mounting Type: Surface MountPackage / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AASupplier Device Package: TO-268 | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                IGBT 650V 30A TO220 
                                    IGBT Type: -Voltage - Collector Emitter Breakdown (Max): -Current - Collector (Ic) (Max): -Current - Collector Pulsed (Icm): -Vce(on) (Max) @ Vge, Ic: -Power - Max: -Switching Energy: -Input Type: -Gate Charge: -Td (on/off) @ 25°C: -Test Condition: -Reverse Recovery Time (trr): -Operating Temperature: -Mounting Type: Through HolePackage / Case: TO-220-3Supplier Device Package: TO-220AB | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                MOSFET N-CH TO252AA 
                                    FET Type: -Technology: -Drain to Source Voltage (Vdss): -Current - Continuous Drain (Id) @ 25°C: -Drive Voltage (Max Rds On,  Min Rds On): -Vgs(th) (Max) @ Id: -Gate Charge (Qg) (Max) @ Vgs: -Input Capacitance (Ciss) (Max) @ Vds: -Vgs (Max): -FET Feature: -Power Dissipation (Max): -Rds On (Max) @ Id, Vgs: -Operating Temperature: -Mounting Type: -Supplier Device Package: -Package / Case: - | 封装: - | Request a Quote |  | 
                
            
                
                    
                        |  |  | IXYS | 
                                SCR 600V 7030A WP5 
                                    Voltage - Off State: 600 VVoltage - Gate Trigger (Vgt) (Max): 3 VCurrent - Gate Trigger (Igt) (Max): 300 mAVoltage - On State (Vtm) (Max): 1.53 VCurrent - On State (It (AV)) (Max): 3597 ACurrent - On State (It (RMS)) (Max): 7030 ACurrent - Hold (Ih) (Max): 1 ACurrent - Off State (Max): 100 mACurrent - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50HzSCR Type: Standard RecoveryOperating Temperature: -40°C ~ 140°CMounting Type: Clamp OnPackage / Case: TO-200AC, K-PUKSupplier Device Package: WP5 | 封装: - | Request a Quote |  |