| 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT 600V 76A 200W TO247AD 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 76A
 - Current - Collector Pulsed (Icm): 152A
 - Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
 - Power - Max: 200W
 - Switching Energy: 4mJ (off)
 - Input Type: Standard
 - Gate Charge: 110nC
 - Td (on/off) @ 25°C: 25ns/250ns
 - Test Condition: 480V, 39A, 4.7 Ohm, 15V
 - Reverse Recovery Time (trr): 25ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3
 - Supplier Device Package: TO-247AD (IXGH)
 
                                     
                                
                             
                         | 
                        封装: TO-247-3  | 
                        库存487,140  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT 1200V 60A 300W TO247AD 
                                
                                    
                                    - IGBT Type: NPT
 - Voltage - Collector Emitter Breakdown (Max): 1200V
 - Current - Collector (Ic) (Max): 60A
 - Current - Collector Pulsed (Icm): -
 - Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
 - Power - Max: 300W
 - Switching Energy: 6.1mJ (on), 3mJ (off)
 - Input Type: Standard
 - Gate Charge: 150nC
 - Td (on/off) @ 25°C: -
 - Test Condition: 600V, 40A, 39 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-3P-3 Full Pack
 - Supplier Device Package: TO-247AD
 
                                     
                                
                             
                         | 
                        封装: TO-3P-3 Full Pack  | 
                        库存3,680  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT 650V 130A 600W TO247 
                                
                                    
                                    - IGBT Type: PT
 - Voltage - Collector Emitter Breakdown (Max): 650V
 - Current - Collector (Ic) (Max): 130A
 - Current - Collector Pulsed (Icm): 250A
 - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
 - Power - Max: 600W
 - Switching Energy: 1.3mJ (on), 370µJ (off)
 - Input Type: Standard
 - Gate Charge: 80nC
 - Td (on/off) @ 25°C: 22ns/80ns
 - Test Condition: 400V, 36A, 5 Ohm, 15V
 - Reverse Recovery Time (trr): 120ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3
 - Supplier Device Package: TO-247 (IXYH)
 
                                     
                                
                             
                         | 
                        封装: TO-247-3  | 
                        库存2,736  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT 600V 120A 300W TO263AA 
                                
                                    
                                    - IGBT Type: PT
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 120A
 - Current - Collector Pulsed (Icm): 300A
 - Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
 - Power - Max: 300W
 - Switching Energy: 950µJ (on), 2.9mJ (off)
 - Input Type: Standard
 - Gate Charge: 110nC
 - Td (on/off) @ 25°C: 25ns/334ns
 - Test Condition: 480V, 32A, 5 Ohm, 15V
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 - Supplier Device Package: TO-263 (IXGA)
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存5,120  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOD IGBT BUCK 1200V 330A Y3-DCB 
                                
                                    
                                    - IGBT Type: NPT
 - Configuration: Single
 - Voltage - Collector Emitter Breakdown (Max): 1200V
 - Current - Collector (Ic) (Max): 330A
 - Power - Max: 1380W
 - Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
 - Current - Collector Cutoff (Max): 13mA
 - Input Capacitance (Cies) @ Vce: 13nF @ 25V
 - Input: Standard
 - NTC Thermistor: No
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: Y3-DCB
 - Supplier Device Package: Y3-DCB
 
                                     
                                
                             
                         | 
                        封装: Y3-DCB  | 
                        库存6,224  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT SIXPACK 130A 600V E3PACK 
                                
                                    
                                    - IGBT Type: NPT
 - Configuration: Three Phase Inverter
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 130A
 - Power - Max: 410W
 - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
 - Current - Collector Cutoff (Max): 1.2mA
 - Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
 - Input: Standard
 - NTC Thermistor: No
 - Operating Temperature: -
 - Mounting Type: Chassis Mount
 - Package / Case: E3
 - Supplier Device Package: E3
 
                                     
                                
                             
                         | 
                        封装: E3  | 
                        库存6,928  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH ISOPLUS247 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存2,384  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH TO-264AA 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 1000V
 - Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 4mA
 - Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 360W (Tc)
 - Rds On (Max) @ Id, Vgs: 750 mOhm @ 7A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-264AA (IXFK)
 - Package / Case: TO-264-3, TO-264AA
 
                                     
                                
                             
                         | 
                        封装: TO-264-3, TO-264AA  | 
                        库存5,504  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH 500V 12A ISOPLUS220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 500V
 - Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4V @ 2.5mA
 - Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 140W (Tc)
 - Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: ISOPLUS220?
 - Package / Case: ISOPLUS220?
 
                                     
                                
                             
                         | 
                        封装: ISOPLUS220?  | 
                        库存2,912  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET P-CH 150V 22A ISOPLUS220 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 150V
 - Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 150W (Tc)
 - Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: ISOPLUS220?
 - Package / Case: ISOPLUS220?
 
                                     
                                
                             
                         | 
                        封装: ISOPLUS220?  | 
                        库存5,744  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH 500V 66A PLUS247 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 500V
 - Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 8mA
 - Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 9125pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 735W (Tc)
 - Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: PLUS247?-3
 - Package / Case: TO-247-3
 
                                     
                                
                             
                         | 
                        封装: TO-247-3  | 
                        库存35,076  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH 500V 44A TO-247 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 500V
 - Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 6.5V @ 4mA
 - Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 830W (Tc)
 - Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-247AD (IXFH)
 - Package / Case: TO-247-3
 
                                     
                                
                             
                         | 
                        封装: TO-247-3  | 
                        库存4,080  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH 150V 120A TO-268 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 150V
 - Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 4mA
 - Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 600W (Tc)
 - Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-268
 - Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
 
                                     
                                
                             
                         | 
                        封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA  | 
                        库存7,664  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET NCH 850V 40A TO268HV 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 850V
 - Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5.5V @ 4mA
 - Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 860W (Tc)
 - Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-268
 - Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
 
                                     
                                
                             
                         | 
                        封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA  | 
                        库存6,128  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH 1700V 2A TO-268 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 1700V
 - Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
 - Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
 - Vgs (Max): ±20V
 - FET Feature: Depletion Mode
 - Power Dissipation (Max): 568W (Tc)
 - Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1A, 0V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-268
 - Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
 
                                     
                                
                             
                         | 
                        封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA  | 
                        库存10,344  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET 6N-CH 75V 110A ISOPLUS 
                                
                                    
                                    - FET Type: 6 N-Channel (3-Phase Bridge)
 - FET Feature: Standard
 - Drain to Source Voltage (Vdss): 75V
 - Current - Continuous Drain (Id) @ 25°C: 110A
 - Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
 - Vgs(th) (Max) @ Id: 4V @ 1mA
 - Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Power - Max: -
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 17-SMD, Gull Wing
 - Supplier Device Package: ISOPLUS-DIL?
 
                                     
                                
                             
                         | 
                        封装: 17-SMD, Gull Wing  | 
                        库存3,504  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOD THYRISTOR/DIODE 2000V Y4-M6 
                                
                                    
                                    - Structure: Series Connection - SCR/Diode
 - Number of SCRs, Diodes: 1 SCR, 1 Diode
 - Voltage - Off State: 2000V
 - Current - On State (It (AV)) (Max): 165A
 - Current - On State (It (RMS)) (Max): 300A
 - Voltage - Gate Trigger (Vgt) (Max): 2V
 - Current - Gate Trigger (Igt) (Max): 150mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
 - Current - Hold (Ih) (Max): 150mA
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: Y4-M6
 
                                     
                                
                             
                         | 
                        封装: Y4-M6  | 
                        库存3,744  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOD THYRISTOR/DIODE 800V Y2-DCB 
                                
                                    
                                    - Structure: Series Connection - SCR/Diode
 - Number of SCRs, Diodes: 1 SCR, 1 Diode
 - Voltage - Off State: 800V
 - Current - On State (It (AV)) (Max): 221A
 - Current - On State (It (RMS)) (Max): 450A
 - Voltage - Gate Trigger (Vgt) (Max): 2V
 - Current - Gate Trigger (Igt) (Max): 150mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
 - Current - Hold (Ih) (Max): 150mA
 - Operating Temperature: -40°C ~ 140°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: Y2-DCB
 
                                     
                                
                             
                         | 
                        封装: Y2-DCB  | 
                        库存6,032  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                DIODE MODULE 1.4KV 290A Y2-DCB 
                                
                                    
                                    - Diode Configuration: 1 Pair Series Connection
 - Diode Type: Standard
 - Voltage - DC Reverse (Vr) (Max): 1400V
 - Current - Average Rectified (Io) (per Diode): 290A
 - Voltage - Forward (Vf) (Max) @ If: 1.3V @ 600A
 - Speed: Standard Recovery >500ns, > 200mA (Io)
 - Reverse Recovery Time (trr): -
 - Current - Reverse Leakage @ Vr: 40mA @ 1400V
 - Operating Temperature - Junction: -
 - Mounting Type: Chassis Mount
 - Package / Case: Y2-DCB
 - Supplier Device Package: Y2-DCB
 
                                     
                                
                             
                         | 
                        封装: Y2-DCB  | 
                        库存7,872  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                DIODE ARRAY 600V 10A ISOPLUS220 
                                
                                    
                                    - Diode Configuration: 1 Pair Common Cathode
 - Diode Type: Standard
 - Voltage - DC Reverse (Vr) (Max): 600V
 - Current - Average Rectified (Io) (per Diode): 10A
 - Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
 - Speed: Fast Recovery =< 500ns, > 200mA (Io)
 - Reverse Recovery Time (trr): 35ns
 - Current - Reverse Leakage @ Vr: 60µA @ 60V
 - Operating Temperature - Junction: -55°C ~ 175°C
 - Mounting Type: Through Hole
 - Package / Case: ISOPLUS220?
 - Supplier Device Package: ISOPLUS220?
 
                                     
                                
                             
                         | 
                        封装: ISOPLUS220?  | 
                        库存4,784  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IC MOD DIODE 3PHASE BRIDGE UGB3 
                                
                                    
                                    - Diode Type: Single Phase
 - Technology: Standard
 - Voltage - Peak Reverse (Max): 10500V
 - Current - Average Rectified (Io): 1.2A
 - Voltage - Forward (Vf) (Max) @ If: -
 - Current - Reverse Leakage @ Vr: -
 - Operating Temperature: 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: UGB-3
 - Supplier Device Package: UGB-3
 
                                     
                                
                             
                         | 
                        封装: UGB-3  | 
                        库存7,744  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                RECT BRIDGE 3PH 82A 800V V1-A 
                                
                                    
                                    - Diode Type: Three Phase
 - Technology: Standard
 - Voltage - Peak Reverse (Max): 800V
 - Current - Average Rectified (Io): 82A
 - Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
 - Current - Reverse Leakage @ Vr: 40µA @ 800V
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: V1-A
 - Supplier Device Package: V1-A
 
                                     
                                
                             
                         | 
                        封装: V1-A  | 
                        库存6,496  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                MOSFET N-CH 1000V 7A TO247 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 1000 V
 - Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 6V @ 1mA
 - Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 300W (Tc)
 - Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-247 (IXTH)
 - Package / Case: TO-247-3
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT TO220AB 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): -
 - Current - Collector (Ic) (Max): -
 - Current - Collector Pulsed (Icm): -
 - Vce(on) (Max) @ Vge, Ic: -
 - Power - Max: -
 - Switching Energy: -
 - Input Type: -
 - Gate Charge: -
 - Td (on/off) @ 25°C: -
 - Test Condition: -
 - Reverse Recovery Time (trr): -
 - Operating Temperature: -
 - Mounting Type: -
 - Package / Case: -
 - Supplier Device Package: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                DIODE ARRAY GP 300V 30A TO263AA 
                                
                                    
                                    - Diode Configuration: 1 Pair Common Cathode
 - Diode Type: Standard
 - Voltage - DC Reverse (Vr) (Max): 300 V
 - Current - Average Rectified (Io) (per Diode): 30A
 - Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
 - Speed: Fast Recovery =< 500ns, > 200mA (Io)
 - Reverse Recovery Time (trr): 35 ns
 - Current - Reverse Leakage @ Vr: 1 µA @ 300 V
 - Operating Temperature - Junction: -55°C ~ 175°C
 - Mounting Type: Surface Mount
 - Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
 - Supplier Device Package: TO-263AA
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存2,004  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                DIODE SCHOTTKY 100V 10A TO252AA 
                                
                                    
                                    - Diode Type: Schottky
 - Voltage - DC Reverse (Vr) (Max): 100 V
 - Current - Average Rectified (Io): 10A
 - Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
 - Speed: Fast Recovery =< 500ns, > 200mA (Io)
 - Reverse Recovery Time (trr): -
 - Current - Reverse Leakage @ Vr: 200 µA @ 100 V
 - Capacitance @ Vr, F: 68pF @ 24V, 1MHz
 - Mounting Type: Surface Mount
 - Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
 - Supplier Device Package: TO-252AA
 - Operating Temperature - Junction: -55°C ~ 175°C
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                BIPOLAR MODULE-THYRISTOR/DIODE T 
                                
                                    
                                    - Structure: Series Connection - SCR/Diode
 - Number of SCRs, Diodes: 1 SCR, 1 Diode
 - Voltage - Off State: 1.6 kV
 - Current - On State (It (AV)) (Max): 116 A
 - Current - On State (It (RMS)) (Max): 182 A
 - Voltage - Gate Trigger (Vgt) (Max): 2.5 V
 - Current - Gate Trigger (Igt) (Max): 150 mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
 - Current - Hold (Ih) (Max): 200 mA
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Mounting Type: Chassis Mount
 - Package / Case: TO-240AA
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                TRIAC 600V 25A TO263 
                                
                                    
                                    - Triac Type: Standard
 - Voltage - Off State: 600 V
 - Current - On State (It (RMS)) (Max): 25 A
 - Voltage - Gate Trigger (Vgt) (Max): 1.3 V
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
 - Current - Gate Trigger (Igt) (Max): 35 mA
 - Current - Hold (Ih) (Max): 50 mA
 - Configuration: Single
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
 - Supplier Device Package: TO-263 (D2PAK)
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存3,000  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                IGBT PT 1200V 480A PLUS247-3 
                                
                                    
                                    - IGBT Type: PT
 - Voltage - Collector Emitter Breakdown (Max): 1200 V
 - Current - Collector (Ic) (Max): 480 A
 - Current - Collector Pulsed (Icm): 1200 A
 - Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
 - Power - Max: 1500 W
 - Switching Energy: 4.9mJ (on), 12mJ (off)
 - Input Type: Standard
 - Gate Charge: 420 nC
 - Td (on/off) @ 25°C: 52ns/590ns
 - Test Condition: 600V, 70A, 1.5Ohm, 15V
 - Reverse Recovery Time (trr): 47 ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3 Variant
 - Supplier Device Package: PLUS247™-3
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存219  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        IXYS  | 
                        
                            
                                SCR 2.6KV 2328A W11 
                                
                                    
                                    - Voltage - Off State: 2.6 kV
 - Voltage - Gate Trigger (Vgt) (Max): 3 V
 - Current - Gate Trigger (Igt) (Max): 300 mA
 - Voltage - On State (Vtm) (Max): 2.95 V
 - Current - On State (It (AV)) (Max): 1158 A
 - Current - On State (It (RMS)) (Max): 2328 A
 - Current - Hold (Ih) (Max): 1 A
 - Current - Off State (Max): 100 mA
 - Current - Non Rep. Surge 50, 60Hz (Itsm): 16000A @ 50Hz
 - SCR Type: Standard Recovery
 - Operating Temperature: -40°C ~ 125°C
 - Mounting Type: Clamp On
 - Package / Case: TO-200AC, K-PUK
 - Supplier Device Package: W11
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         |