页 430 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRGS4610DPBF	Infineon Technologies	IGBT 600V 16A 77W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47 Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,408
IRG4BC30W-STRLP	Infineon Technologies	IGBT 600V 23A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,104
AUIRFS3006-7P	Infineon Technologies	MOSFET N-CH 60V 293A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8850pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	封装: TO-263-7, D2Pak (6 Leads + Tab)	库存36,000
IRFS23N20DTRRP	Infineon Technologies	MOSFET N-CH 200V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,680
IPB050N06NGATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,024
IPU04N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存2,768
IPP50R140CPHKSA1	Infineon Technologies	MOSFET N-CH 550V 23A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 930µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: TO-220-3	库存7,456
IPC100N04S5L1R5ATMA1	Infineon Technologies	MOSFET N-CH 40V 100A 8TDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存4,800
PTFA092213ELV4T400XWSA1	Infineon Technologies	IC RF FET LDMOS H-33288-6 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	封装: -	库存3,200
BSD235NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 0.95A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存3,248
BCR503E6327HTSA1	Infineon Technologies	TRANS PREBIAS NPN 300MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存5,776
BAR6302LE6433XT	Infineon Technologies	DIODE RF SGL 50V 100MA TSLP-2 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 100mA Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1 Ohm @ 10mA, 100MHz Power Dissipation (Max): 250mW Operating Temperature: 150°C (TJ) Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2	封装: SOD-882	库存6,064
F43L50R07W2H3FB11BPSA1	Infineon Technologies	MOD DIODE BRIDGE EASY2B-2-1 Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,376
IR5001S	Infineon Technologies	IC OR CTRLR N+1 8SOIC Type: N+1 ORing Controller FET Type: N-Channel Ratio - Input:Output: N:1 Internal Switch(s): No Delay Time - ON: 27µs Delay Time - OFF: 130ns Current - Output (Max): - Current - Supply: 500µA Voltage - Supply: 36 V ~ 75 V Applications: -48V Dist Power Systems Operating Temperature: 0°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存55,320
IRMCF143STY	Infineon Technologies	IC MOTOR CTLR I2C/SPI 64MQFP Motor Type - Stepper: - Motor Type - AC, DC: AC, Servo Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: I2C, RS-232, SPI Technology: IGBT Step Resolution: - Applications: General Purpose Current - Output: - Voltage - Supply: 3V ~ 3.6V Voltage - Load: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: 64-LQFP	库存4,240
IRS2330DSPBF	Infineon Technologies	IC BRIDGE DVR 3PH 600V 28-SOIC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封装: 28-SOIC (0.295", 7.50mm Width)	库存4,576
KTY135	Infineon Technologies	SENSOR TEMP RESISTIVE SOT-23 Resistance in Ohms @ 25°C: 1.97k Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Power - Max: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存7,524
TLE63893GV50XUMA1	Infineon Technologies	IC REG CTRLR BUCK 14DSO Output Type: Transistor Driver Function: Step-Down Output Configuration: Positive Topology: Buck Number of Outputs: 1 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 5 V ~ 60 V Frequency - Switching: 360kHz Duty Cycle (Max): 100% Synchronous Rectifier: Yes Clock Sync: Yes Serial Interfaces: - Control Features: Current Limit, Enable, Reset Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-DSO	封装: 14-SOIC (0.154", 3.90mm Width)	库存22,644
C164CI8RMCAFXQMA1	Infineon Technologies	IC MCU 16BIT 80MQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: 80-MQFP	封装: -	库存4,720
TLE9274QXXUMA2	Infineon Technologies	OPTIREG SYST BASIS CHIPS PG-VQFN Applications: - Voltage - Input: 4.5V ~ 28V Number of Outputs: 4 Voltage - Output: Multiple Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31	封装: -	Request a Quote
CY8C4026LQI-T412	Infineon Technologies	CONSUMER / IOT MCUS Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, Microwire, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT Number of I/O: 19 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Supplier Device Package: 24-QFN (4x4)	封装: -	Request a Quote
IGC70T120T8RQX1SA1	Infineon Technologies	IGBT CHIP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote
IGC50T120T8RLX7SA2	Infineon Technologies	IGBT 1200V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CY9AF314NPMC-GE1	Infineon Technologies	IC MCU 32BIT 256KB FLASH 100LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封装: -	Request a Quote
IPP037N06L3GHKSA1	Infineon Technologies	MOSFET N-CH 60V 90A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	Request a Quote
IPT010N08NM5ATMA1	Infineon Technologies	TRENCH 40<-<100V PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封装: -	Request a Quote
CYT3DLABGBQ1AESGS	Infineon Technologies	IC MCU 32BT 4.063MB FLSH 216TQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Dual-Core Speed: 240MHz Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Number of I/O: 108 Program Memory Size: 4.063MB (4.063M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 384K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: - Oscillator Type: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 216-QFP Supplier Device Package: 216-TQFP	封装: -	Request a Quote
IRF3205ZPBFAKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	封装: -	Request a Quote
SPB10N10LG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
CY62158GE30-45BVXI	Infineon Technologies	IC SRAM 8MBIT PARALLEL 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	封装: -	Request a Quote

IRGS4610DPBF

Infineon Technologies

IGBT 600V 16A 77W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Power - Max: 77W
Switching Energy: 56µJ (on), 122µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 27ns/75ns
Test Condition: 400V, 6A, 47 Ohm, 15V
Reverse Recovery Time (trr): 74ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,408

IRG4BC30W-STRLP

Infineon Technologies

IGBT 600V 23A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,104

AUIRFS3006-7P

Infineon Technologies

MOSFET N-CH 60V 293A D2PAK-7P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8850pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

库存36,000

IRFS23N20DTRRP

Infineon Technologies

MOSFET N-CH 200V 24A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,680

IPB050N06NGATMA1

Infineon Technologies

MOSFET N-CH 60V 100A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,024

IPU04N03LA G

Infineon Technologies

MOSFET N-CH 25V 50A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存2,768

IPP50R140CPHKSA1

Infineon Technologies

MOSFET N-CH 550V 23A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存7,456

IPC100N04S5L1R5ATMA1

Infineon Technologies

MOSFET N-CH 40V 100A 8TDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存4,800

PTFA092213ELV4T400XWSA1

Infineon Technologies

IC RF FET LDMOS H-33288-6

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,200

BSD235NH6327XTSA1

Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存3,248

BCR503E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存5,776

BAR6302LE6433XT

Infineon Technologies

DIODE RF SGL 50V 100MA TSLP-2

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 100mA
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2

封装: SOD-882

库存6,064

F43L50R07W2H3FB11BPSA1

Infineon Technologies

MOD DIODE BRIDGE EASY2B-2-1

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,376

IR5001S

Infineon Technologies

IC OR CTRLR N+1 8SOIC

Type: N+1 ORing Controller
FET Type: N-Channel
Ratio - Input:Output: N:1
Internal Switch(s): No
Delay Time - ON: 27µs
Delay Time - OFF: 130ns
Current - Output (Max): -
Current - Supply: 500µA
Voltage - Supply: 36 V ~ 75 V
Applications: -48V Dist Power Systems
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存55,320

IRMCF143STY

Infineon Technologies

IC MOTOR CTLR I2C/SPI 64MQFP

Motor Type - Stepper: -
Motor Type - AC, DC: AC, Servo
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: I2C, RS-232, SPI
Technology: IGBT
Step Resolution: -
Applications: General Purpose
Current - Output: -
Voltage - Supply: 3V ~ 3.6V
Voltage - Load: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

库存4,240

IRS2330DSPBF

Infineon Technologies

IC BRIDGE DVR 3PH 600V 28-SOIC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

库存4,576

KTY135

Infineon Technologies

SENSOR TEMP RESISTIVE SOT-23

Resistance in Ohms @ 25°C: 1.97k
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Power - Max: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存7,524

TLE63893GV50XUMA1

Infineon Technologies

IC REG CTRLR BUCK 14DSO

Output Type: Transistor Driver
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Number of Outputs: 1
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 5 V ~ 60 V
Frequency - Switching: 360kHz
Duty Cycle (Max): 100%
Synchronous Rectifier: Yes
Clock Sync: Yes
Serial Interfaces: -
Control Features: Current Limit, Enable, Reset
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-DSO

封装: 14-SOIC (0.154", 3.90mm Width)

库存22,644

C164CI8RMCAFXQMA1

Infineon Technologies

IC MCU 16BIT 80MQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: 80-MQFP

封装: -

库存4,720

TLE9274QXXUMA2

Infineon Technologies

OPTIREG SYST BASIS CHIPS PG-VQFN

Applications: -
Voltage - Input: 4.5V ~ 28V
Number of Outputs: 4
Voltage - Output: Multiple
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31

封装: -

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CY8C4026LQI-T412

Infineon Technologies

CONSUMER / IOT MCUS

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Number of I/O: 19
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Supplier Device Package: 24-QFN (4x4)

封装: -

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IGC70T120T8RQX1SA1

Infineon Technologies

IGBT CHIP

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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IGC50T120T8RLX7SA2

Infineon Technologies

IGBT 1200V 50A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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CY9AF314NPMC-GE1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 100LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封装: -

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IPP037N06L3GHKSA1

Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

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IPT010N08NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V PG-HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封装: -

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CYT3DLABGBQ1AESGS

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 216TQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Speed: 240MHz
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Number of I/O: 108
Program Memory Size: 4.063MB (4.063M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 384K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: -
Oscillator Type: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 216-QFP
Supplier Device Package: 216-TQFP

封装: -

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IRF3205ZPBFAKSA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

封装: -

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SPB10N10LG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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CY62158GE30-45BVXI

Infineon Technologies

IC SRAM 8MBIT PARALLEL 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

封装: -

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