Infineon Technologies 产品

IRG7PH28UD1PBF

Infineon Technologies

IGBT 1200V 30A 115W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
• Power - Max: 115W
• Switching Energy: 543µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: -/229ns
• Test Condition: 600V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IPP90N06S4L04AKSA2

Infineon Technologies

MOSFET N-CH TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

BSS192PL6327HTSA1

Infineon Technologies

MOSFET P-CH 250V 0.19A SOT-89

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT89
• Package / Case: TO-243AA

封装: TO-243AA

IRL3302PBF

Infineon Technologies

MOSFET N-CH 20V 39A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 23A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IRFS41N15DPBF

Infineon Technologies

MOSFET N-CH 150V 41A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPT004N03LATMA1

Infineon Technologies

MOSFET N-CH 30V 300A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 163nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 0.4 mOhm @ 150A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

封装: 8-PowerSFN

IR2301STR

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 5 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 130ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

IR2132JPBF

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

封装: 44-LCC (J-Lead), 32 Leads

IRSM515-084DA2

Infineon Technologies

IC MOTOR DRIVER 600V 23DIP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 340 mOhm
• Current - Output / Channel: 4.6A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 200V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Through Hole
• Package / Case: 23-DIP Module
• Supplier Device Package: 23-DIPA

封装: 23-DIP Module

BTN8980TAAUMA1

Infineon Technologies

IC MOTOR DRIVER PAR TO263-7

• Output Configuration: Half Bridge
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 4.7 mOhm LS, 5.3 mOhm HS
• Current - Output / Channel: 50A
• Current - Peak Output: 117A
• Voltage - Supply: 6 V ~ 40 V
• Voltage - Load: 6 V ~ 40 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Latch Function, Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO263-7

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

XC164CS16F40FBBFXQMA1

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100TQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 79
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 14x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: PG-TQFP-100-5

封装: 100-LQFP

BGA524N6BOARDTOBO1

Infineon Technologies

LNA BOARDS

• Type: Amplifier
• Frequency: 1.55GHz ~ 1.615GHz
• For Use With/Related Products: BGA524N6
• Supplied Contents: Board

封装: -

IR3563BMAU01TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

TC264D40F200NBCLXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 144TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

C164SL6RMCAKXUMA5

Infineon Technologies

IC MCU 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRLHM620TR2PBF

Infineon Technologies

MOSFET N-CH 20V 26A PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.1V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (3x3)
• Package / Case: 8-VQFN Exposed Pad

封装: -

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PSB3427RGTR

Infineon Technologies

LANTIQ PSB3427 TELECOMS IC

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IRLML6302TR

Infineon Technologies

MOSFET P-CH 20V 780MA SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
• Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3™/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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MB15E07SLPFV1-G-EF-6E1

Infineon Technologies

IC SYNTHESIZER 16SSOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY22393ZXC-529

Infineon Technologies

IC CLOCK GEN PROG 16TSSOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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FP20R06YE3B4BOMA1

Infineon Technologies

MOD IGBT LOW PWR EASY2-1

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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AIMZA75R020M1HXKSA1

Infineon Technologies

AUTOMOTIVE_SICMOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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T1451N52TOHXPSA1

Infineon Technologies

SCR MODULE 5200V 2610A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 5.2 kV
• Current - On State (It (AV)) (Max): 2320 A
• Current - On State (It (RMS)) (Max): 2610 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF

封装: -

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IGP20N65H5XKSA1

Infineon Technologies

IGBT 650V 42A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 42 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 125 W
• Switching Energy: 170µJ (on), 60µJ (off)
• Input Type: Standard
• Gate Charge: 48 nC
• Td (on/off) @ 25°C: 18ns/156ns
• Test Condition: 400V, 10A, 32Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1

封装: -

CY8C4146LQAS275XQSA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 64-VFQFN Exposed Pad
• Supplier Device Package: 64-QFN (9x9)

封装: -

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S25FL256LDPNFB013

Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 256Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 66 MHz
• Write Cycle Time - Word, Page: 60µs, 1.2ms
• Access Time: 6 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x8)

封装: -

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CG9172AF

Infineon Technologies

ASYNC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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FT150R12KE3GB4BDLA1

Infineon Technologies

IGBT MOD 1200V 200A 700W

• IGBT Type: -
• Configuration: 3 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 700 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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IMBG65R260M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
• Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-12
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

S34MS08G201BHV003

Infineon Technologies

IC FLASH NAND 63FBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote