页 376 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IPI80N06S3-05	Infineon Technologies	MOSFET N-CH 55V 80A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存6,288
IRL2203NLPBF	Infineon Technologies	MOSFET N-CH 30V 116A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 180W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存46,608
IRF1405S	Infineon Technologies	MOSFET N-CH 55V 131A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存542,496
IPP60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 35A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存3,072
IPP50R520CPXKSA1	Infineon Technologies	MOSFET N-CH 500V 7.1A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: TO-220-3	库存2,992
IRFS5615TRLPBF	Infineon Technologies	MOSFET N-CH 150V 33A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,456
IPD70N12S3L12ATMA1	Infineon Technologies	MOSFET N-CHANNEL_100+ FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存4,576
IRF6794MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 32A DIRECTFET-MX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	封装: DirectFET? Isometric MX	库存2,448
IRF3546MTRPBF	Infineon Technologies	MOSFET 4N-CH 25V 16A/20A 41PQFN FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 41-PowerVFQFN Supplier Device Package: 41-PQFN (6x8)	封装: 41-PowerVFQFN	库存3,456
BCR119SE6433HTMA1	Infineon Technologies	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存3,312
BAT6207WE6327HTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 20MA SOT-343 Diode Type: Schottky - 2 Independent Voltage - Peak Reverse (Max): 40V Current - Max: 20mA Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100mW Operating Temperature: 150°C (TJ) Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: SC-82A, SOT-343	库存6,848
IDK06G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.1mA @ 650V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,520
TLE4254GSXUMA1	Infineon Technologies	IC REG LINEAR POS ADJ 70MA 8DSO Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): Tracking Voltage - Output (Max): - Voltage Dropout (Max): 0.4V @ 70mA Current - Output: 70mA Current - Quiescent (Iq): - Current - Supply (Max): 80µA ~ 15mA PSRR: 60dB (100Hz) Control Features: Enable Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,016
IR3870MTRPBF	Infineon Technologies	IC REG BUCK ADJ 10A SYNC 15QFN Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 26V Voltage - Output (Min/Fixed): 0.5V Voltage - Output (Max): 12V Current - Output: 10A Frequency - Switching: Up to 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-PowerVQFN Supplier Device Package: PQFN (5x6)	封装: 16-PowerVQFN	库存97,200
1EBN1001AEXUMA1	Infineon Technologies	IC IGBT DVR 1200V DSO14 Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 13 V ~ 18 V Logic Voltage - VIL, VIH: 1.5V, 3.5V Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): 1200V Rise / Fall Time (Typ): 50ns, 90ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-14	封装: 14-SOIC (0.154", 3.90mm Width)	库存2,608
IRSM515-035DA	Infineon Technologies	IC MOTOR DRIVER 600V 23DIP Output Configuration: Half Bridge (3) Applications: AC Motors Interface: Logic Load Type: Inductive Technology: UMOS Rds On (Typ): 1.8 Ohm Current - Output / Channel: 2.1A Current - Peak Output: 15A Voltage - Supply: 13.5 V ~ 16.5 V Voltage - Load: 400V (Max) Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit Fault Protection: UVLO Mounting Type: Through Hole Package / Case: 23-DIP Module Supplier Device Package: 23-DIP	封装: 23-DIP Module	库存6,800
SAF-XC878M-16FFI 3V3 AA	Infineon Technologies	IC MCU 8BIT 64KB FLASH 64LQFP Core Processor: XC800 Core Size: 8-Bit Speed: 27MHz Connectivity: SPI, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 3.25K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: 64-LQFP	库存7,344
ESD1P0RFWH6327XTSA1	Infineon Technologies	TVS DIODE 70VWM 15VC SOT323 Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 70V (Max) Voltage - Breakdown (Min): - Voltage - Clamping (Max) @ Ipp: 15V Current - Peak Pulse (10/1000µs): 10A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: Ethernet, HDMI, RF Antenna Capacitance @ Frequency: 1pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封装: SC-70, SOT-323	库存109,188
PVY116-TPBF	Infineon Technologies	IC RELAY PHOTOVO 40V 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 4.4 Ohm Load Current: 250mA Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 40 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP Relay Type: Relay	封装: 4-SOP (0.173", 4.40mm)	库存14,904
40060455	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
10282417	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
2ED21064S06JXUMA1	Infineon Technologies	IC GATE DRIVER DSO-14 Driven Configuration: High-Side and Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Input Type: - High Side Voltage - Max (Bootstrap): 20 V Rise / Fall Time (Typ): 100ns, 35ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-14	封装: -	库存15,000
IPD60R170CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 14A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote
CY8C4147AZSS565XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封装: -	Request a Quote
S26HL01GTFPBHV023	Infineon Technologies	IC FLASH 1GBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 6.5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	Request a Quote
CYT2B63BADQ0AZSGS	Infineon Technologies	IC MCU 32BIT 576KB FLASH 64LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 80MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 49 Program Memory Size: 576KB (576K x 8) Program Memory Type: FLASH EEPROM Size: 64K x 8 RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 22x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: -	库存4,800
IDFW60C65D1XKSA1	Infineon Technologies	DIODE ARRAY GP 650V 56A TO247-3 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 56A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 112 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-AI	封装: -	库存720
TC365DP64F300WAAKXUMA1	Infineon Technologies	IC MCU 32BIT 4MB FLASH 176LQFP Core Processor: TriCore™ Core Size: 32-Bit Dual-Core Speed: 300MHz Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Number of I/O: - Program Memory Size: 4MB (4M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 672K x 8 Voltage - Supply (Vcc/Vdd): 3.3V, 5V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: PG-LQFP-176-22	封装: -	Request a Quote
CY8C6244LQI-S4D92	Infineon Technologies	IC MCU 32BIT 256KB FLASH 68QFN Core Processor: ARM® Cortex®-M0+/M4F Core Size: 32-Bit Dual-Core Speed: 50MHz, 150MHz Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 52 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Supplier Device Package: 68-QFN (8x8)	封装: -	库存1,686
ISC073N12LM6ATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR,120V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs(th) (Max) @ Id: 2.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: -	库存24,168

IPI80N06S3-05

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存6,288

IRL2203NLPBF

Infineon Technologies

MOSFET N-CH 30V 116A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存46,608

IRF1405S

Infineon Technologies

MOSFET N-CH 55V 131A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存542,496

IPP60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存3,072

IPP50R520CPXKSA1

Infineon Technologies

MOSFET N-CH 500V 7.1A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存2,992

IRFS5615TRLPBF

Infineon Technologies

MOSFET N-CH 150V 33A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,456

IPD70N12S3L12ATMA1

Infineon Technologies

MOSFET N-CHANNEL_100+

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,576

IRF6794MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 32A DIRECTFET-MX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

封装: DirectFET? Isometric MX

库存2,448

IRF3546MTRPBF

Infineon Technologies

MOSFET 4N-CH 25V 16A/20A 41PQFN

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 41-PowerVFQFN
Supplier Device Package: 41-PQFN (6x8)

封装: 41-PowerVFQFN

库存3,456

BCR119SE6433HTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存3,312

BAT6207WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 20MA SOT-343

Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 40V
Current - Max: 20mA
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100mW
Operating Temperature: 150°C (TJ)
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

库存6,848

IDK06G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 6A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.1mA @ 650V
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,520

TLE4254GSXUMA1

Infineon Technologies

IC REG LINEAR POS ADJ 70MA 8DSO

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): Tracking
Voltage - Output (Max): -
Voltage Dropout (Max): 0.4V @ 70mA
Current - Output: 70mA
Current - Quiescent (Iq): -
Current - Supply (Max): 80µA ~ 15mA
PSRR: 60dB (100Hz)
Control Features: Enable
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,016

IR3870MTRPBF

Infineon Technologies

IC REG BUCK ADJ 10A SYNC 15QFN

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 26V
Voltage - Output (Min/Fixed): 0.5V
Voltage - Output (Max): 12V
Current - Output: 10A
Frequency - Switching: Up to 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-PowerVQFN
Supplier Device Package: PQFN (5x6)

封装: 16-PowerVQFN

库存97,200

1EBN1001AEXUMA1

Infineon Technologies

IC IGBT DVR 1200V DSO14

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 13 V ~ 18 V
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): 1200V
Rise / Fall Time (Typ): 50ns, 90ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-14

封装: 14-SOIC (0.154", 3.90mm Width)

库存2,608

IRSM515-035DA

Infineon Technologies

IC MOTOR DRIVER 600V 23DIP

Output Configuration: Half Bridge (3)
Applications: AC Motors
Interface: Logic
Load Type: Inductive
Technology: UMOS
Rds On (Typ): 1.8 Ohm
Current - Output / Channel: 2.1A
Current - Peak Output: 15A
Voltage - Supply: 13.5 V ~ 16.5 V
Voltage - Load: 400V (Max)
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit
Fault Protection: UVLO
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Supplier Device Package: 23-DIP

封装: 23-DIP Module

库存6,800

SAF-XC878M-16FFI 3V3 AA

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 27MHz
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 3.25K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

库存7,344

ESD1P0RFWH6327XTSA1

Infineon Technologies

TVS DIODE 70VWM 15VC SOT323

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 70V (Max)
Voltage - Breakdown (Min): -
Voltage - Clamping (Max) @ Ipp: 15V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: Ethernet, HDMI, RF Antenna
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

库存109,188

PVY116-TPBF

Infineon Technologies

IC RELAY PHOTOVO 40V 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 4.4 Ohm
Load Current: 250mA
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 40 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP
Relay Type: Relay

封装: 4-SOP (0.173", 4.40mm)

库存14,904

40060455

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

10282417

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

2ED21064S06JXUMA1

Infineon Technologies

IC GATE DRIVER DSO-14

Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Input Type: -
High Side Voltage - Max (Bootstrap): 20 V
Rise / Fall Time (Typ): 100ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-14

封装: -

库存15,000

IPD60R170CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 14A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

CY8C4147AZSS565XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封装: -

Request a Quote

S26HL01GTFPBHV023

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 6.5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

Request a Quote

CYT2B63BADQ0AZSGS

Infineon Technologies

IC MCU 32BIT 576KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 80MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 49
Program Memory Size: 576KB (576K x 8)
Program Memory Type: FLASH
EEPROM Size: 64K x 8
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 22x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: -

库存4,800

IDFW60C65D1XKSA1

Infineon Technologies

DIODE ARRAY GP 650V 56A TO247-3

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io) (per Diode): 56A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 112 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-AI

封装: -

库存720

TC365DP64F300WAAKXUMA1

Infineon Technologies

IC MCU 32BIT 4MB FLASH 176LQFP

Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Speed: 300MHz
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Number of I/O: -
Program Memory Size: 4MB (4M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 672K x 8
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-176-22

封装: -

Request a Quote

CY8C6244LQI-S4D92

Infineon Technologies

IC MCU 32BIT 256KB FLASH 68QFN

Core Processor: ARM® Cortex®-M0+/M4F
Core Size: 32-Bit Dual-Core
Speed: 50MHz, 150MHz
Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 52
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Supplier Device Package: 68-QFN (8x8)

封装: -

库存1,686

ISC073N12LM6ATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: -

库存24,168