页 363 - Infineon Technologies 产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

Infineon Technologies 产品

记录 16,988
页  363/567
图片
零件编号
制造商
描述
封装
库存
数量
IRGP4055DPBF
Infineon Technologies

IGBT 300V 110A 255W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 255W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 132nC
  • Td (on/off) @ 25°C: 44ns/245ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 27ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存3,120
hot IRG4BC20UD
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 160µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 39ns/93ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存6,784
IRG7CH54K10EF-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 290nC
  • Td (on/off) @ 25°C: 75ns/305ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存2,352
64-0055PBF
Infineon Technologies

MOSFET N-CH TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存2,256
BSS205NL6327HTSA1
Infineon Technologies

MOSFET N-CH 20V 2.5A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存2,992
BSS87 E6433
Infineon Technologies

MOSFET N-CH 240V 260MA SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT89
  • Package / Case: TO-243AA
封装: TO-243AA
库存7,440
BSP300 E6327
Infineon Technologies

MOSFET N-CH 800V 190MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存2,768
hot IRFU4105Z
Infineon Technologies

MOSFET N-CH 55V 30A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存19,632
hot IRF3000
Infineon Technologies

MOSFET N-CH 300V 1.6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 960mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存18,276
IRFP7718PBF
Infineon Technologies

MOSFET N CH 75V 195A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 830nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 517W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,448
SISC185N06LX1SA1
Infineon Technologies

TRANSISTOR P-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存7,936
hot IPW65R110CFD
Infineon Technologies

MOSFET N-CH 650V 31.2A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 277.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存72,000
IRF7759L2TRPBF
Infineon Technologies

MOSFET N-CH 75V DIRECTFET L8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET L8
  • Package / Case: DirectFET? Isometric L8
封装: DirectFET? Isometric L8
库存32,148
PTAB182002TCV2R250XTMA1
Infineon Technologies

IC RF FET LDMOS 190W H-49248H-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 14.8dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 520mA
  • Power - Output: 29W
  • Voltage - Rated: 65V
  • Package / Case: H-49248H-4
  • Supplier Device Package: H-49248H-4
封装: H-49248H-4
库存3,136
TLE4476DATMA2
Infineon Technologies

IC REG LINEAR 3.3V/5V TO252-5-11

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 2
  • Voltage - Input (Max): 42V
  • Voltage - Output (Min/Fixed): 3.3V, 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -, 0.7V @ 330mA
  • Current - Output: 350mA, 430mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 150µA ~ 13mA
  • PSRR: 60dB (20Hz ~ 20kHz), 60dB (20Hz ~ 20kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 170°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: PG-TO252-5-11
封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD
库存6,656
PEB 33322 EL V2.2-G
Infineon Technologies

IC CODEC VOIP 144-LBGA

  • Function: Analog Voice Access
  • Interface: Parallel, PCM, Serial
  • Number of Circuits: 2
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 144-LBGA
  • Supplier Device Package: PG-LBGA-144
封装: 144-LBGA
库存5,232
TLE4957CNE6747HAMA1
Infineon Technologies

IC HALL EFFECT SENSOR SSO-3

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,436
SRF55V02PMCC8XHSA1
Infineon Technologies

IC INTERFACE EEPROM MCC2-2

  • Type: RFID Transponder
  • Frequency: 13.56MHz
  • Standards: ISO 15693, ISO 18000-3
  • Interface: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 70°C
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,282
hot PVT422SPBF
Infineon Technologies

IC RELAY PHOTOVO 400V 120MA 8SMD

  • Circuit: DPST (2 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 35 Ohm
  • Load Current: 120mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 400 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 8-SMD (0.300", 7.62mm)
  • Supplier Device Package: 8-SMT
  • Relay Type: Relay
封装: 8-SMD (0.300", 7.62mm)
库存207,120
TC233L32F200FACKXUMA1
Infineon Technologies

32 BIT AURIX

  • Core Processor: TriCore™
  • Core Size: 32-Bit
  • Speed: 200MHz
  • Connectivity: CANbus, FlexRay, LINbus, QSPI
  • Peripherals: DMA, WDT
  • Number of I/O: -
  • Program Memory Size: 2MB (2M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 192K x 8
  • Voltage - Supply (Vcc/Vdd): 3.3V
  • Data Converters: A/D 24x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: PG-TQFP-100-3
封装: 100-LQFP
库存4,800
PX8143HDMG008XTMA1
Infineon Technologies

LED PX8143HDMG008XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
S29PL032J70BFI073
Infineon Technologies

IC FLASH 32MBIT PARALLEL 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (8.15x6.15)
封装: -
库存7,467
IR35223MTRPBFXUMA1
Infineon Technologies

IR CONTROLLER PG-VQFN-48

  • Applications: -
  • Current - Supply: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存9,000
TC364DP64F300FAALXUMA1
Infineon Technologies

IC MCU 32BIT 4MB FLASH 144TQFP

  • Core Processor: TriCore™
  • Core Size: 32-Bit Dual-Core
  • Speed: 300MHz
  • Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
  • Peripherals: DMA, I2S, PWM, WDT
  • Number of I/O: -
  • Program Memory Size: 4MB (4M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 672K x 8
  • Voltage - Supply (Vcc/Vdd): 3.3V, 5V
  • Data Converters: -
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: PG-TQFP-144-27
封装: -
库存3,000
S29PL064J70BFI120E
Infineon Technologies

IC FLASH NOR 48FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
S26HS512TGABHI003
Infineon Technologies

Nor

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 5.45 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
封装: -
Request a Quote
IGC18T120T8QX1SA1
Infineon Technologies

IGBT 1200V 15A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
T640N14TOFXPSA1
Infineon Technologies

SCR MODULE 1800V 1250A DO200AA

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 644 A
  • Current - On State (It (RMS)) (Max): 1250 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
封装: -
库存36
SPB07N60C3ATMA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
CY8C6347LQI-BLD52T
Infineon Technologies

IC MCU 32BIT 1MB FLASH 68QFN

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 150MHz
  • Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
  • Number of I/O: 36
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 288K x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-VFQFN Exposed Pad
  • Supplier Device Package: 68-QFN (8x8)
封装: -
库存5,820