Infineon Technologies 产品

IRGP4620D-EPBF

Infineon Technologies

IGBT 600V 32A 140W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 36A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
• Power - Max: 140W
• Switching Energy: 75µJ (on), 225µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 31ns/83ns
• Test Condition: 400V, 12A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 68ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封装: TO-247-3

IRGBC30S

Infineon Technologies

IGBT STD 600V 34A TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 18A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IKD15N60RF

Infineon Technologies

IGBT 600V 30A 250W PG-TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 270µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 13ns/160ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FS75R07W2E3B11ABOMA1

Infineon Technologies

IGBT MODULES

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRL3303

Infineon Technologies

MOSFET N-CH 30V 38A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

SIPC08N80C3X1SA2

Infineon Technologies

TRANSISTOR N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IRLR2705TRLPBF

Infineon Technologies

MOSFET N-CH 55V 28A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SPD04P10PLGBTMA1

Infineon Technologies

MOSFET P-CH 100V 4.2A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 380µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BSZ340N08NS3 G

Infineon Technologies

MOSFET N-CH 80V 23A TSDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 12µA
• Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IRF7379PBF

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BCX70JE6433HTMA1

Infineon Technologies

TRANS NPN 45V 0.1A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

BFP650E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 37GHz
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
• Gain: 10.5dB ~ 21.5dB
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

SDP20S30

Infineon Technologies

DIODE ARRAY SCHOTTKY 300V TO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 300V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封装: TO-220-3

IR3538MTRPBF

Infineon Technologies

IC CTRLR PWM 8-PHASE 56QFN

• Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN
• Supplier Device Package: 56-QFN (8x8)

封装: 56-VFQFN

IR3856MTRPBF

Infineon Technologies

IC REG BUCK ADJ 6A SYNC 17PQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.5V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.7V
• Voltage - Output (Max): 18.9V
• Current - Output: 6A
• Frequency - Switching: 225kHz ~ 1.65MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-PowerVQFN
• Supplier Device Package: 17-PQFN (4x5)

封装: 17-PowerVQFN

IRSF3031LTR

Infineon Technologies

IC DRVR LO SIDE 50V 1.8A SOT-223

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.8A
• Rds On (Typ): 155 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled
• Fault Protection: Over Temperature, Over Voltage
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

ICE3B5065I

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP TO220

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 220W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: TO-220-6 Formed Leads
• Supplier Device Package: PG-TO220-6
• Mounting Type: Through Hole

封装: TO-220-6 Formed Leads

XMC4500F100K1024ABXQSA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 55
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 160K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 24x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-11

封装: 100-LQFP Exposed Pad

XC2336B40F80LRABKXUMA1

Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

封装: 64-LQFP Exposed Pad

BGA729N6E6327XTSA1

Infineon Technologies

IC AMP MMIC 6TSNP

• Frequency: -
• P1dB: -
• Gain: -
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: -
• Supplier Device Package: -

封装: -

ICE5GR1680AGXUMA1

Infineon Technologies

125KHZ OFFLINE 800V 1.6 DSO12

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: 14-SOIC (0.154", 3.90mm Width), 12 Leads
• Supplier Device Package: PG-DSO-12-21
• Mounting Type: Surface Mount

封装: 14-SOIC (0.154", 3.90mm Width), 12 Leads

C164CI8RMCAKXUMA5

Infineon Technologies

IC MCU 16BIT 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: 80-MQFP

封装: -

TC264D40F200WBCKXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 144TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PSDC412E11228049NOSA1

Infineon Technologies

MOD IGBT STACK PSAO-1

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CP5790DMT

Infineon Technologies

SEMICONDUCTOR OTHER

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IPW60R024P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 101A TO247-3-41

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2.03mA
• Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 291W (Tc)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-41
• Package / Case: TO-247-3

封装: -

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IPD06P004NATMA1

Infineon Technologies

MOSFET P-CH 60V 16.4A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 710µA
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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CYT2B74CADQ0AZEGST

Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 80LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 63
• Program Memory Size: 1.0625MB (1.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 96K x 8
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 52x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

封装: -

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S26HL512TFPBHV003

Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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ICE5AR2280CZXKLA1

Infineon Technologies

COOLSET (INCL. GEN5) PG-DIP-7

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 16 V
• Voltage - Supply (Vcc/Vdd): 10V ~ 27V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 40 W
• Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
• Control Features: Soft Start
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

封装: -