页 341 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG4IBC30W	Infineon Technologies	IGBT 600V 17A 45W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 45W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	封装: TO-220-3 Full Pack	库存6,080
IPI120N06S403AKSA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存3,920
IPP032N06N3GHKSA1	Infineon Technologies	MOSFET N-CH 60V 120A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 118µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存4,560
SPI80N04S2-04	Infineon Technologies	MOSFET N-CH 40V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存11,700
IRF6662TR1PBF	Infineon Technologies	MOSFET N-CH 100V 8.3A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	封装: DirectFET? Isometric MZ	库存2,720
IRFH8307TRPBF	Infineon Technologies	MOSFET N-CH 30V 100A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存5,904
IPD50R1K4CEBTMA1	Infineon Technologies	MOSFET N-CH 500V 3.1A PG-TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,744
IRLI520NPBF	Infineon Technologies	MOSFET N-CH 100V 8.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存123,708
BCR 183T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封装: SC-75, SOT-416	库存4,912
SMBT3906SH6327XTSA1	Infineon Technologies	TRANS 2PNP 40V 0.2A SOT363 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存5,184
BAV 99 B5003	Infineon Technologies	DIODE ARRAY GP 80V 200MA SOT23 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存4,688
BTS410F2 E3062A	Infineon Technologies	SWITCH SMART HIGH SIDE D2PAK Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 4.7 V ~ 42 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.6A Rds On (Typ): 190 mOhm Input Type: Non-Inverting Features: Auto Restart, Status Flag Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Supplier Device Package: PG-TO263-5-2	封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	库存5,728
BTS500801TMBAKSA1	Infineon Technologies	IC SWITCH PWR HISIDE TO220-7 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 5.5 V ~ 38 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9.5A Rds On (Typ): 7 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-220-7 Supplier Device Package: PG-TO220-7	封装: TO-220-7	库存6,320
TLD1121ELXUMA1	Infineon Technologies	IC LED DRIVER LINEAR 14SSOP Type: Linear Topology: - Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Voltage - Output: 40V Current - Output / Channel: 360mA Frequency: - Dimming: - Applications: Automotive Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-SSOP-14	封装: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad	库存3,328
AUIRS2301S	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 8SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 130ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存24,036
IRS21814SPBF	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 14-SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	封装: 14-SOIC (0.154", 3.90mm Width)	库存34,848
ICE3AR10080CJZXKLA1	Infineon Technologies	IC OFFLINE CTRLR SMPS CM 7DIP Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback Voltage - Start Up: 17V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V Duty Cycle: 75% Frequency - Switching: 100kHz Power (Watts): 22W Fault Protection: Over Load, Over Temperature, Over Voltage Control Features: - Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Supplier Device Package: PG-DIP-7 Mounting Type: Through Hole	封装: 8-DIP (0.300", 7.62mm), 7 Leads	库存7,968
CHL8328-20CRT	Infineon Technologies	IC REGULATOR PG-VQFN-56-901 Applications: Controller, DDR, Intel VR12, AMD SVI, PVI Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-VQFN (8x8)	封装: 56-VFQFN Exposed Pad	库存5,328
BSC046N02KSGAUMA1	Infineon Technologies	MOSFET N-CH 20V 19A/80A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	封装: -	库存59,685
IPB054N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存7,014
IPD50P04P4L11ATMA2	Infineon Technologies	MOSFET P-CH 40V 50A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存17,070
CG7777AA	Infineon Technologies	IC USB PERIPHERAL FULL SPEED Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CY8C4148AZA-S598	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT Number of I/O: 84 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: -	Request a Quote
TLE7259-2GE	Infineon Technologies	IC Type: - Protocol: - Number of Drivers/Receivers: - Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
PEB2261NV2-0	Infineon Technologies	SICOFI 2 DUAL CHANNEL CODEC FILT Type: - Data Interface: - Resolution (Bits): - Number of ADCs / DACs: - Sigma Delta: - S/N Ratio, ADCs / DACs (db) Typ: - Dynamic Range, ADCs / DACs (db) Typ: - Voltage - Supply, Analog: - Voltage - Supply, Digital: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
IGI60F200A1LAUMA1	Infineon Technologies	IC HALF BRIDGE DRIVER 21TIQFN Output Configuration: Half Bridge Applications: General Purpose Interface: - Load Type: - Technology: - Rds On (Typ): 200mOhm Current - Output / Channel: - Current - Peak Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Features: - Fault Protection: - Mounting Type: Surface Mount Package / Case: 21-TQFN Exposed Pad Supplier Device Package: PG-TIQFN-21-1	封装: -	Request a Quote
CYAT61658-64AS48T	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封装: -	Request a Quote
IPDD60R080G7XTMA1	Infineon Technologies	MOSFET N-CH 600V 29A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 174W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	封装: -	库存9,300
CY8C4147AZES548XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 84 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: -	Request a Quote
CYAT817AZA88-5B202	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封装: -	Request a Quote

IRG4IBC30W

Infineon Technologies

IGBT 600V 17A 45W TO220FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 17A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 45W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

库存6,080

IPI120N06S403AKSA2

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存3,920

IPP032N06N3GHKSA1

Infineon Technologies

MOSFET N-CH 60V 120A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存4,560

SPI80N04S2-04

Infineon Technologies

MOSFET N-CH 40V 80A I2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6980pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存11,700

IRF6662TR1PBF

Infineon Technologies

MOSFET N-CH 100V 8.3A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MZ
Package / Case: DirectFET? Isometric MZ

封装: DirectFET? Isometric MZ

库存2,720

IRFH8307TRPBF

Infineon Technologies

MOSFET N-CH 30V 100A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存5,904

IPD50R1K4CEBTMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,744

IRLI520NPBF

Infineon Technologies

MOSFET N-CH 100V 8.1A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB Full-Pak
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存123,708

BCR 183T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

库存4,912

SMBT3906SH6327XTSA1

Infineon Technologies

TRANS 2PNP 40V 0.2A SOT363

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 330mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存5,184

BAV 99 B5003

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 150nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存4,688

BTS410F2 E3062A

Infineon Technologies

SWITCH SMART HIGH SIDE D2PAK

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 4.7 V ~ 42 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.6A
Rds On (Typ): 190 mOhm
Input Type: Non-Inverting
Features: Auto Restart, Status Flag
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: PG-TO263-5-2

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

库存5,728

BTS500801TMBAKSA1

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 5.5 V ~ 38 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Rds On (Typ): 7 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-220-7
Supplier Device Package: PG-TO220-7

封装: TO-220-7

库存6,320

TLD1121ELXUMA1

Infineon Technologies

IC LED DRIVER LINEAR 14SSOP

Type: Linear
Topology: -
Internal Switch(s): Yes
Number of Outputs: 1
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Voltage - Output: 40V
Current - Output / Channel: 360mA
Frequency: -
Dimming: -
Applications: Automotive
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-SSOP-14

封装: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

库存3,328

AUIRS2301S

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 130ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存24,036

IRS21814SPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

库存34,848

ICE3AR10080CJZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback
Voltage - Start Up: 17V
Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
Duty Cycle: 75%
Frequency - Switching: 100kHz
Power (Watts): 22W
Fault Protection: Over Load, Over Temperature, Over Voltage
Control Features: -
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Supplier Device Package: PG-DIP-7
Mounting Type: Through Hole

封装: 8-DIP (0.300", 7.62mm), 7 Leads

库存7,968

CHL8328-20CRT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-VQFN (8x8)

封装: 56-VFQFN Exposed Pad

库存5,328

BSC046N02KSGAUMA1

Infineon Technologies

MOSFET N-CH 20V 19A/80A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

封装: -

库存59,685

IPB054N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存7,014

IPD50P04P4L11ATMA2

Infineon Technologies

MOSFET P-CH 40V 50A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存17,070

CG7777AA

Infineon Technologies

IC USB PERIPHERAL FULL SPEED

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

CY8C4148AZA-S598

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Number of I/O: 84
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: -

Request a Quote

TLE7259-2GE

Infineon Technologies

IC

Type: -
Protocol: -
Number of Drivers/Receivers: -
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

PEB2261NV2-0

Infineon Technologies

SICOFI 2 DUAL CHANNEL CODEC FILT

Type: -
Data Interface: -
Resolution (Bits): -
Number of ADCs / DACs: -
Sigma Delta: -
S/N Ratio, ADCs / DACs (db) Typ: -
Dynamic Range, ADCs / DACs (db) Typ: -
Voltage - Supply, Analog: -
Voltage - Supply, Digital: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

IGI60F200A1LAUMA1

Infineon Technologies

IC HALF BRIDGE DRIVER 21TIQFN

Output Configuration: Half Bridge
Applications: General Purpose
Interface: -
Load Type: -
Technology: -
Rds On (Typ): 200mOhm
Current - Output / Channel: -
Current - Peak Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Features: -
Fault Protection: -
Mounting Type: Surface Mount
Package / Case: 21-TQFN Exposed Pad
Supplier Device Package: PG-TIQFN-21-1

封装: -

Request a Quote

CYAT61658-64AS48T

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封装: -

Request a Quote

IPDD60R080G7XTMA1

Infineon Technologies

MOSFET N-CH 600V 29A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

封装: -

库存9,300

CY8C4147AZES548XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 84
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: -

Request a Quote

CYAT817AZA88-5B202

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封装: -

Request a Quote