页 325 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRFS7762PBF	Infineon Technologies	MOSFET N-CH 75V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,560
IRF6621TR1	Infineon Technologies	MOSFET N-CH 30V 12A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	封装: DirectFET? Isometric SQ	库存99,876
IRL3714ZPBF	Infineon Technologies	MOSFET N-CH 20V 36A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存194,220
IRL3715S	Infineon Technologies	MOSFET N-CH 20V 54A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存31,080
IRL2505STRL	Infineon Technologies	MOSFET N-CH 55V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,408
IRF7455	Infineon Technologies	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存16,896
IRFS4310ZPBF	Infineon Technologies	MOSFET N-CH 100V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存401,484
IPD50R280CEAUMA1	Infineon Technologies	MOSFET N-CH 550V 18.1A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,624
IRLR3705ZPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存14,736
PTFA092213FLV5XWSA1	Infineon Technologies	IC FET RF LDMOS H-34288-4/2 Transistor Type: LDMOS Frequency: 960MHz Gain: 17.5dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 1.85A Power - Output: 200W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-34288-2	封装: 2-Flatpack, Fin Leads, Flanged	库存2,464
SMBT 3904U E6327	Infineon Technologies	TRANS 2NPN 40V 0.2A SC74-6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: PG-SC74-6	封装: SC-74, SOT-457	库存7,232
IKCM15L60GDXKMA1	Infineon Technologies	IFPS MODULES Type: IGBT Configuration: 3 Phase Current: 20A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	封装: 24-PowerDIP Module (1.028", 26.10mm)	库存6,288
BB 555 E7902	Infineon Technologies	DIODE VAR CAP 30V 20MA SCD-80 Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz Capacitance Ratio: 9.8 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封装: SC-80	库存3,424
TLE7238GSXUMA1	Infineon Technologies	IC DRIVER SPI 8CH HS/LS 24-SSOP Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:8 Output Configuration: High Side or Low Side Output Type: N-Channel Interface: SPI Voltage - Load: 9 V ~ 16 V Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Current - Output (Max): 130mA, 260mA Rds On (Typ): 900 mOhm, 1.6 Ohm Input Type: - Features: - Fault Protection: Open Load Detect, Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: PG-SSOP-24	封装: 24-SSOP (0.154", 3.90mm Width)	库存2,176
2EDN8524RXUMA1	Infineon Technologies	IC GATE DRVR 8TSSOP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 20 V Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 5.3ns, 4.5ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: PG-TSSOP-8	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存7,968
PEB 3265 H V1.5	Infineon Technologies	IC VOICE ACCESS CODEC MQFP64 Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Number of Circuits: 2 Voltage - Supply: 3.3V Current - Supply: 105mA Power (Watts): - Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 64-QFP Supplier Device Package: P-64-MQFP	封装: 64-QFP	库存6,848
TLE92603QXXUMA1	Infineon Technologies	IC SYSTSEM BASIS CHIP 48VQFN Applications: Automotive Interface: SPI Voltage - Supply: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31 Mounting Type: Surface Mount	封装: 48-VFQFN Exposed Pad	库存7,568
XMC1100T016F0064ABXUMA1	Infineon Technologies	IC MCU 32BIT 64KB FLASH 16TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 11 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 6x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-16-8	封装: 16-TSSOP (0.173", 4.40mm Width)	库存6,480
ESD5V3U4RRSE6327HTSA1	Infineon Technologies	TVS DIODE 5.3VWM 15VC SOT-363 Type: Steering (Rail to Rail) Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5.3V (Max) Voltage - Breakdown (Min): 6.3V Voltage - Clamping (Max) @ Ipp: 15V Current - Peak Pulse (10/1000µs): 3A (8/20µs) Power - Peak Pulse: 50W Power Line Protection: Yes Applications: General Purpose Capacitance @ Frequency: 0.4pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存6,930
BGA 725L6 E6327	Infineon Technologies	IC AMP MMIC RF LNA 20DB TSLP-6 Frequency: 1.55GHz ~ 1.615GHz P1dB: -16dBm Gain: 20dB Noise Figure: 0.65dB RF Type: GPS/GNSS Voltage - Supply: 1.5 V ~ 3.6 V Current - Supply: 3.6mA Test Frequency: - Package / Case: 6-XFDFN Supplier Device Package: TSLP-6-2	封装: 6-XFDFN	库存4,554
PVT322S	Infineon Technologies	IC RELAY PHOTOVO 250V 170MA 8SMD Circuit: DPST (2 Form A) Output Type: AC, DC On-State Resistance (Max): 10 Ohm Load Current: 170mA Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 250 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 8-SMD (0.300", 7.62mm) Supplier Device Package: 8-SMT Relay Type: Relay	封装: 8-SMD (0.300", 7.62mm)	库存247,836
S26HS01GTGABHV030	Infineon Technologies	IC FLASH 1GBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 5.45 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	Request a Quote
IGOT60R070D1AUMA1	Infineon Technologies	GANFET N-CH 600V 31A 20DSO FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	封装: -	Request a Quote
CY7C1441KVE33-133AXI	Infineon Technologies	IC SRAM 36MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 36Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 6.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: -	Request a Quote
IPB065N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
D251K18BB01XPSA1	Infineon Technologies	DIODE GP 1.8KV 255A DSW27-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 255A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: BG-DSW27-1 Supplier Device Package: BG-DSW27-1 Operating Temperature - Junction: -40°C ~ 180°C	封装: -	Request a Quote
F4200R12N3H3FB11BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3B-411 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存30
SIDC78D170HX1SA1	Infineon Technologies	DIODE GP 1.7KV 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 1700 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote
TT500N12KOFHPSA2	Infineon Technologies	SCR MODULE 1.2KV 900A MODULE Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.2 kV Current - On State (It (AV)) (Max): 500 A Current - On State (It (RMS)) (Max): 900 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
IPP139N08N3GXKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 33µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	Request a Quote

IRFS7762PBF

Infineon Technologies

MOSFET N-CH 75V 104A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 51A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,560

IRF6621TR1

Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? SQ
Package / Case: DirectFET? Isometric SQ

封装: DirectFET? Isometric SQ

库存99,876

IRL3714ZPBF

Infineon Technologies

MOSFET N-CH 20V 36A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存194,220

IRL3715S

Infineon Technologies

MOSFET N-CH 20V 54A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存31,080

IRL2505STRL

Infineon Technologies

MOSFET N-CH 55V 104A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,408

IRF7455

Infineon Technologies

MOSFET N-CH 30V 15A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存16,896

IRFS4310ZPBF

Infineon Technologies

MOSFET N-CH 100V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存401,484

IPD50R280CEAUMA1

Infineon Technologies

MOSFET N-CH 550V 18.1A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,624

IRLR3705ZPBF

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存14,736

PTFA092213FLV5XWSA1

Infineon Technologies

IC FET RF LDMOS H-34288-4/2

Transistor Type: LDMOS
Frequency: 960MHz
Gain: 17.5dB
Voltage - Test: 30V
Current Rating: -
Noise Figure: -
Current - Test: 1.85A
Power - Output: 200W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-34288-2

封装: 2-Flatpack, Fin Leads, Flanged

库存2,464

SMBT 3904U E6327

Infineon Technologies

TRANS 2NPN 40V 0.2A SC74-6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 330mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: PG-SC74-6

封装: SC-74, SOT-457

库存7,232

IKCM15L60GDXKMA1

Infineon Technologies

IFPS MODULES

Type: IGBT
Configuration: 3 Phase
Current: 20A
Voltage: 600V
Voltage - Isolation: 2000Vrms
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

封装: 24-PowerDIP Module (1.028", 26.10mm)

库存6,288

BB 555 E7902

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD-80

Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio: 9.8
Capacitance Ratio Condition: C1/C28
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封装: SC-80

库存3,424

TLE7238GSXUMA1

Infineon Technologies

IC DRIVER SPI 8CH HS/LS 24-SSOP

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 1:8
Output Configuration: High Side or Low Side
Output Type: N-Channel
Interface: SPI
Voltage - Load: 9 V ~ 16 V
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Current - Output (Max): 130mA, 260mA
Rds On (Typ): 900 mOhm, 1.6 Ohm
Input Type: -
Features: -
Fault Protection: Open Load Detect, Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: PG-SSOP-24

封装: 24-SSOP (0.154", 3.90mm Width)

库存2,176

2EDN8524RXUMA1

Infineon Technologies

IC GATE DRVR 8TSSOP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 20 V
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: PG-TSSOP-8

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存7,968

PEB 3265 H V1.5

Infineon Technologies

IC VOICE ACCESS CODEC MQFP64

Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Number of Circuits: 2
Voltage - Supply: 3.3V
Current - Supply: 105mA
Power (Watts): -
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 64-QFP
Supplier Device Package: P-64-MQFP

封装: 64-QFP

库存6,848

TLE92603QXXUMA1

Infineon Technologies

IC SYSTSEM BASIS CHIP 48VQFN

Applications: Automotive
Interface: SPI
Voltage - Supply: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31
Mounting Type: Surface Mount

封装: 48-VFQFN Exposed Pad

库存7,568

XMC1100T016F0064ABXUMA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 16TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 11
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 6x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-16-8

封装: 16-TSSOP (0.173", 4.40mm Width)

库存6,480

ESD5V3U4RRSE6327HTSA1

Infineon Technologies

TVS DIODE 5.3VWM 15VC SOT-363

Type: Steering (Rail to Rail)
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Voltage - Breakdown (Min): 6.3V
Voltage - Clamping (Max) @ Ipp: 15V
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Power - Peak Pulse: 50W
Power Line Protection: Yes
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存6,930

BGA 725L6 E6327

Infineon Technologies

IC AMP MMIC RF LNA 20DB TSLP-6

Frequency: 1.55GHz ~ 1.615GHz
P1dB: -16dBm
Gain: 20dB
Noise Figure: 0.65dB
RF Type: GPS/GNSS
Voltage - Supply: 1.5 V ~ 3.6 V
Current - Supply: 3.6mA
Test Frequency: -
Package / Case: 6-XFDFN
Supplier Device Package: TSLP-6-2

封装: 6-XFDFN

库存4,554

PVT322S

Infineon Technologies

IC RELAY PHOTOVO 250V 170MA 8SMD

Circuit: DPST (2 Form A)
Output Type: AC, DC
On-State Resistance (Max): 10 Ohm
Load Current: 170mA
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 250 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 8-SMD (0.300", 7.62mm)
Supplier Device Package: 8-SMT
Relay Type: Relay

封装: 8-SMD (0.300", 7.62mm)

库存247,836

S26HS01GTGABHV030

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 5.45 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

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IGOT60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-87
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

封装: -

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CY7C1441KVE33-133AXI

Infineon Technologies

IC SRAM 36MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 36Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: -

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IPB065N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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D251K18BB01XPSA1

Infineon Technologies

DIODE GP 1.8KV 255A DSW27-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Average Rectified (Io): 255A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: BG-DSW27-1
Supplier Device Package: BG-DSW27-1
Operating Temperature - Junction: -40°C ~ 180°C

封装: -

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F4200R12N3H3FB11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3B-411

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存30

SIDC78D170HX1SA1

Infineon Technologies

DIODE GP 1.7KV 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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TT500N12KOFHPSA2

Infineon Technologies

SCR MODULE 1.2KV 900A MODULE

Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.2 kV
Current - On State (It (AV)) (Max): 500 A
Current - On State (It (RMS)) (Max): 900 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

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IPP139N08N3GXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

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