页 3 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG7PG35U-EPBF	Infineon Technologies	IGBT 1000V 55A 210W TO247AD IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封装: TO-247-3	库存3,920
IRGI4060DPBF	Infineon Technologies	IGBT 600V 14A 37W TO220ABFP IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 23A Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 7.5A Power - Max: 37W Switching Energy: 47µJ (on), 141µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 29ns/101ns Test Condition: 400V, 7.5A, 47 Ohm, 15V Reverse Recovery Time (trr): 73ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	封装: TO-220-3 Full Pack	库存7,056
IPP12CN10NGXKSA1	Infineon Technologies	MOSFET N-CH 100V 67A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存2,832
IPB060N15N5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,800
IRF3205ZSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存455,748
BSC16DN25NS3 G	Infineon Technologies	MOSFET N-CH 250V 10.9A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 32µA Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存50,784
IRF9358TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 9.2A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,000
SIDC03D60F6	Infineon Technologies	DIODE GEN PURP 600V 6A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封装: Die	库存7,856
IFX27001TF V26	Infineon Technologies	IC REG LINEAR 2.6V 1A TO252-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 2.6V Voltage - Output (Max): - Voltage Dropout (Max): 1.4V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 1.6mA PSRR: 65dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,600
IRU1209CS	Infineon Technologies	IC REG LINEAR POS ADJ 1A 8SOIC Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 12V Voltage - Output (Min/Fixed): 1.24V Voltage - Output (Max): 11.35V Voltage Dropout (Max): 0.65V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 3mA ~ 50mA PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,592
IFX7805ABTSAKSA1	Infineon Technologies	IC REG LINEAR 5V 1A TO220-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 35V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 2V @ 1A (Typ) Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 5mA ~ 6mA PSRR: 75dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO-220-3	封装: TO-220-3	库存12,696
IR3595AMTRPBF	Infineon Technologies	IC REG CTLR BUCK PWM 56QFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: 56-QFN (7x7)	封装: -	库存4,784
IR21531D	Infineon Technologies	IC DRVR HALF BRDG SELF-OSC 8-DIP Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10 V ~ 15.6 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 45ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存5,520
IR3558MTRPBF	Infineon Technologies	IC REG BUCK SYNC ADJ 45A 26PQFN Output Configuration: Half Bridge Applications: Synchronous Buck Converters, Voltage Regulators Interface: PWM Load Type: Inductive Technology: Power MOSFET Rds On (Typ): - Current - Output / Channel: 45A Current - Peak Output: - Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 15 V Operating Temperature: -40°C ~ 125°C (TJ) Features: Bootstrap Circuit, Status Flag Fault Protection: Over Temperature, UVLO Mounting Type: Surface Mount Package / Case: 28-PowerVQFN Supplier Device Package: PQFN (5x6)	封装: 28-PowerVQFN	库存108,000
TLE4924C2E6947HAMA1	Infineon Technologies	IC HALL EFFECT SENSOR SSO-3 Function: - Technology: - Polarization: - Sensing Range: - Test Condition: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Output Type: - Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存8,046
TLE4928HALA1	Infineon Technologies	MAGNETIC SWITCH SPEC PURP SSO-3 Function: Special Purpose Technology: Hall Effect Polarization: - Sensing Range: - Test Condition: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Output Type: - Features: - Operating Temperature: - Package / Case: 3-SIP, SSO-3-09 Supplier Device Package: SSO-3	封装: 3-SIP, SSO-3-09	库存8,766
IPD052N10NF2SATMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 84µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote
TLE7243SLFUMA1	Infineon Technologies	IC DRIVER SPI 24SSOP Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:2 Output Configuration: Low Side Output Type: N-Channel Interface: SPI Voltage - Load: 4.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 260mA Rds On (Typ): 1.2Ohm Input Type: - Features: - Fault Protection: Open Load Detect, Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: PG-SSOP-24-7	封装: -	Request a Quote
2SP0320T2A0FF1400RNPSA1	Infineon Technologies	MODULE GATE DRIVER Type: - Configuration: - Current: - Voltage: - Voltage - Isolation: - Package / Case: -	封装: -	Request a Quote
IPS65R1K0CEAKMA2	Infineon Technologies	MOSFET N-CH 650V 7.2A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-342 Package / Case: TO-251-3 Stub Leads, IPAK	封装: -	Request a Quote
IRFC024NB	Infineon Technologies	MOSFET 55V 17A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 17A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封装: -	Request a Quote
S6J336AJSBSE20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 132MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 126 Program Memory Size: 112KB (112K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 48x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-TEQFP (24x24)	封装: -	Request a Quote
CYAT81682-128AA88Z	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封装: -	Request a Quote
IRF100P218XKMA1	Infineon Technologies	MOSFET N-CH 100V 209A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 556W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封装: -	Request a Quote
XDPP1100Q024XUMA1	Infineon Technologies	CONTROLLER Output Type: PWM Function: Step-Up/Step-Down Output Configuration: Positive Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge Number of Outputs: 6 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Frequency - Switching: Up to 2MHz Duty Cycle (Max): - Synchronous Rectifier: Yes Clock Sync: Yes Serial Interfaces: PMBus Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 24-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-24-20	封装: -	库存14,535
CYAT81685-128AS88Z	Infineon Technologies	PSOC BASED - TRUETOUCH Touchscreen: 2 Wire Capacitive Resolution (Bits): - Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封装: -	Request a Quote
SIDC02D60C8F1SA1	Infineon Technologies	DIODE GEN PURP 600V 6A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote
IRFB4020PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	封装: -	Request a Quote
PSB2163NV3-1G	Infineon Technologies	ARCOFI AUDIO RINGING CODEC Function: - Applications: - Number of Channels: - Interface: - Voltage - Supply: - Operating Temperature: - Specifications: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
FS13MR12W2M1HB70BPSA1	Infineon Technologies	SIC 6N-CH 1200V 62.5A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V Vgs(th) (Max) @ Id: 5.15V @ 28mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存36

IRG7PG35U-EPBF

Infineon Technologies

IGBT 1000V 55A 210W TO247AD

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Power - Max: 210W
Switching Energy: 1.06mJ (on), 620µJ (off)
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 30ns/160ns
Test Condition: 600V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封装: TO-247-3

库存3,920

IRGI4060DPBF

Infineon Technologies

IGBT 600V 14A 37W TO220ABFP

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 23A
Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 7.5A
Power - Max: 37W
Switching Energy: 47µJ (on), 141µJ (off)
Input Type: Standard
Gate Charge: 19nC
Td (on/off) @ 25°C: 29ns/101ns
Test Condition: 400V, 7.5A, 47 Ohm, 15V
Reverse Recovery Time (trr): 73ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

封装: TO-220-3 Full Pack

库存7,056

IPP12CN10NGXKSA1

Infineon Technologies

MOSFET N-CH 100V 67A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存2,832

IPB060N15N5ATMA1

Infineon Technologies

DIFFERENTIATED MOSFETS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,800

IRF3205ZSTRLPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存455,748

BSC16DN25NS3 G

Infineon Technologies

MOSFET N-CH 250V 10.9A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 165 mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存50,784

IRF9358TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 9.2A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,000

SIDC03D60F6

Infineon Technologies

DIODE GEN PURP 600V 6A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封装: Die

库存7,856

IFX27001TF V26

Infineon Technologies

IC REG LINEAR 2.6V 1A TO252-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 2.6V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.4V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 1.6mA
PSRR: 65dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,600

IRU1209CS

Infineon Technologies

IC REG LINEAR POS ADJ 1A 8SOIC

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 12V
Voltage - Output (Min/Fixed): 1.24V
Voltage - Output (Max): 11.35V
Voltage Dropout (Max): 0.65V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 3mA ~ 50mA
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,592

IFX7805ABTSAKSA1

Infineon Technologies

IC REG LINEAR 5V 1A TO220-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 35V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 2V @ 1A (Typ)
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 5mA ~ 6mA
PSRR: 75dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3

封装: TO-220-3

库存12,696

IR3595AMTRPBF

Infineon Technologies

IC REG CTLR BUCK PWM 56QFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: 56-QFN (7x7)

封装: -

库存4,784

IR21531D

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10 V ~ 15.6 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 45ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存5,520

IR3558MTRPBF

Infineon Technologies

IC REG BUCK SYNC ADJ 45A 26PQFN

Output Configuration: Half Bridge
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Technology: Power MOSFET
Rds On (Typ): -
Current - Output / Channel: 45A
Current - Peak Output: -
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 15 V
Operating Temperature: -40°C ~ 125°C (TJ)
Features: Bootstrap Circuit, Status Flag
Fault Protection: Over Temperature, UVLO
Mounting Type: Surface Mount
Package / Case: 28-PowerVQFN
Supplier Device Package: PQFN (5x6)

封装: 28-PowerVQFN

库存108,000

TLE4924C2E6947HAMA1

Infineon Technologies

IC HALL EFFECT SENSOR SSO-3

Function: -
Technology: -
Polarization: -
Sensing Range: -
Test Condition: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Output Type: -
Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存8,046

TLE4928HALA1

Infineon Technologies

MAGNETIC SWITCH SPEC PURP SSO-3

Function: Special Purpose
Technology: Hall Effect
Polarization: -
Sensing Range: -
Test Condition: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Output Type: -
Features: -
Operating Temperature: -
Package / Case: 3-SIP, SSO-3-09
Supplier Device Package: SSO-3

封装: 3-SIP, SSO-3-09

库存8,766

IPD052N10NF2SATMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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TLE7243SLFUMA1

Infineon Technologies

IC DRIVER SPI 24SSOP

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 1:2
Output Configuration: Low Side
Output Type: N-Channel
Interface: SPI
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 260mA
Rds On (Typ): 1.2Ohm
Input Type: -
Features: -
Fault Protection: Open Load Detect, Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: PG-SSOP-24-7

封装: -

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2SP0320T2A0FF1400RNPSA1

Infineon Technologies

MODULE GATE DRIVER

Type: -
Configuration: -
Current: -
Voltage: -
Voltage - Isolation: -
Package / Case: -

封装: -

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IPS65R1K0CEAKMA2

Infineon Technologies

MOSFET N-CH 650V 7.2A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3-342
Package / Case: TO-251-3 Stub Leads, IPAK

封装: -

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IRFC024NB

Infineon Technologies

MOSFET 55V 17A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 17A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封装: -

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S6J336AJSBSE20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 132MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 126
Program Memory Size: 112KB (112K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 48x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-TEQFP (24x24)

封装: -

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CYAT81682-128AA88Z

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封装: -

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IRF100P218XKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 556W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: -

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XDPP1100Q024XUMA1

Infineon Technologies

CONTROLLER

Output Type: PWM
Function: Step-Up/Step-Down
Output Configuration: Positive
Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge
Number of Outputs: 6
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Frequency - Switching: Up to 2MHz
Duty Cycle (Max): -
Synchronous Rectifier: Yes
Clock Sync: Yes
Serial Interfaces: PMBus
Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-24-20

封装: -

库存14,535

CYAT81685-128AS88Z

Infineon Technologies

PSOC BASED - TRUETOUCH

Touchscreen: 2 Wire Capacitive
Resolution (Bits): -
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封装: -

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SIDC02D60C8F1SA1

Infineon Technologies

DIODE GEN PURP 600V 6A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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IRFB4020PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

封装: -

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PSB2163NV3-1G

Infineon Technologies

ARCOFI AUDIO RINGING CODEC

Function: -
Applications: -
Number of Channels: -
Interface: -
Voltage - Supply: -
Operating Temperature: -
Specifications: -
Package / Case: -
Supplier Device Package: -

封装: -

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FS13MR12W2M1HB70BPSA1

Infineon Technologies

SIC 6N-CH 1200V 62.5A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 28mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存36