Infineon Technologies 产品

SKB06N60ATMA1

Infineon Technologies

IGBT 600V 12A 68W TO263-3-2

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
• Power - Max: 68W
• Switching Energy: 215µJ
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 25ns/220ns
• Test Condition: 400V, 6A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 200ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4RC10KD

Infineon Technologies

IGBT 600V 9A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 250µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 49ns/97ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB020N10N5LFATMA1

Infineon Technologies

MOSFET N-CH 100V D2PAK-3

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

BSZ0703LSATMA1

Infineon Technologies

MOSFET N-CH 8TDSON

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IPB80N06S2H5ATMA2

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSD235N L6327

Infineon Technologies

MOSFET 2N-CH 20V 0.95A SOT363

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 950mA
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
• Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

IRF7380PBF

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 3.6A
• Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BFP620FH7764XTSA1

Infineon Technologies

TRANS RF NPN 2.8V 80MA 4TSFP

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21dB ~ 10dB
• Power - Max: 185mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

封装: 4-SMD, Flat Leads

BAR6304WH6327XTSA1

Infineon Technologies

DIODE RF SW 50V 100MA SOT323

• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (Max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

IR3637STRPBF

Infineon Technologies

IC REG CTRLR BUCK 8SOIC

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Frequency - Switching: 400kHz
• Duty Cycle (Max): 85%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Soft Start
• Operating Temperature: 0°C ~ 125°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

BTS5441G

Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-28

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.6A
• Rds On (Typ): 19 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-28

封装: 28-SOIC (0.295", 7.50mm Width)

IRS2580DSTRPBF

Infineon Technologies

IC PFC

• Mode: Critical Conduction (CRM)
• Frequency - Switching: -
• Current - Startup: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

TLE94108ELXUMA1

Infineon Technologies

IC DRIVER HALF-BRIDGE 24SSOP

• Output Configuration: Half Bridge (8)
• Applications: AC Motors, DC Motors, General Purpose
• Interface: SPI
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): 850 mOhm LS, 850 mOhm HS
• Current - Output / Channel: 500mA
• Current - Peak Output: 2A
• Voltage - Supply: 3 V ~ 5.5 V
• Voltage - Load: 5.5 V ~ 20 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: -
• Fault Protection: Over Temperature, Short Circuit, UVLO
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRSM515-035PA

Infineon Technologies

IC MOTOR DRIVER 600V 23SOP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 1.8 Ohm
• Current - Output / Channel: 2.1A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 32-PowerSMD Module, 23 Leads
• Supplier Device Package: 23-SOP

封装: 32-PowerSMD Module, 23 Leads

TLD55412QVXUMA1

Infineon Technologies

IC LED DVR DCDC BUCK 48VQFN

• Type: DC DC Controller
• Topology: Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): No
• Number of Outputs: 2
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 40V
• Voltage - Output: 55V
• Current - Output / Channel: -
• Frequency: 200kHz ~ 700kHz
• Dimming: Analog, PWM
• Applications: Automotive
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31

封装: 48-VFQFN Exposed Pad

TC223S16F133FACLXUMA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 100TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

FS20R06W1E3B11BOMA1

Infineon Technologies

IGBT MODULE 600V 35A 135W

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 35 A
• Power - Max: 135 W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

TD240N32KOFHPSA1

Infineon Technologies

SCR MODULE 3800V 700A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 3.8 kV
• Current - On State (It (AV)) (Max): 446 A
• Current - On State (It (RMS)) (Max): 700 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

Request a Quote

SIGC14T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 15 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 31ns/261ns
• Test Condition: 400V, 15A, 21Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

Request a Quote

IPB085N06L-G

Infineon Technologies

MOSFET N-CH 60V 80A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2V @ 125µA
• Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

BAT15-098LRH

Infineon Technologies

MIXER DIODE, LOW BARRIER, X BAND

• Diode Type: Schottky - 1 Pair Common Cathode
• Voltage - Peak Reverse (Max): 4V
• Current - Max: 110 mA
• Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100 mW
• Operating Temperature: 150°C (TJ)
• Package / Case: 4-XFDFN
• Supplier Device Package: PG-TSLP-4-7

封装: -

Request a Quote

IMIC32V06X6SA1

Infineon Technologies

INTELLIGENT POWER MODULE

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

封装: -

Request a Quote

IKCM20L60GBXKMA1

Infineon Technologies

INTELLIGENT POWER MODULE (IPM)

• Type: IGBT
• Configuration: 3 Phase
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

封装: -

Request a Quote

WLC1150-68LQXQ

Infineon Technologies

WLC IC

• Applications: Wireless Power Transmitter
• Current - Supply: 87mA
• Voltage - Supply: 4.5V ~ 24V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 68-UFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

封装: -

Request a Quote

IPT65R125CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-3
• Package / Case: 8-PowerSFN

封装: -

Request a Quote

ICE2A280

Infineon Technologies

IC REG LINEAR SWITCHING REG

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 800V
• Topology: Flyback
• Voltage - Start Up: 13.5 V
• Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
• Duty Cycle: 72%
• Frequency - Switching: 100kHz
• Power (Watts): 50 W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7-1
• Mounting Type: Through Hole

封装: -

Request a Quote

IPP80N07S405AKSA1

Infineon Technologies

MOSFET N-CH TO220-3

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

Request a Quote

FS3L35R07W2H5C56BPSA1

Infineon Technologies

LOW POWER EASY

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CY8C4147AZAS598

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 84
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

Request a Quote

TT285N16KOFHPSA2

Infineon Technologies

SCR MODULE 1.6KV 520A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 285 A
• Current - On State (It (RMS)) (Max): 520 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 130°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

Request a Quote