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Infineon Technologies |
IGBT 1200V 8.2A 29W TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 8.2A
- Current - Collector Pulsed (Icm): 9A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 29W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 8.6nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82 Ohm, 15V
- Reverse Recovery Time (trr): 52ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3
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封装: TO-220-3 Full Pack |
库存7,760 |
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Infineon Technologies |
MOSFET N-CH 55V 540MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2.7µA
- Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存514,224 |
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Infineon Technologies |
MOSFET N-CH 55V 2A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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封装: TO-261-4, TO-261AA |
库存2,896 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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封装: 8-PowerTDFN |
库存240,000 |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
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封装: TO-261-4, TO-261AA |
库存29,382 |
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Infineon Technologies |
TRANS PNP RF 15V SOT-23
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
- Gain: 8dB ~ 13.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15mA, 8V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存6,304 |
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Infineon Technologies |
IC REG BUCK ADJ 35A SYNC LGA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 1.5V
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 35A
- Frequency - Switching: 225kHz ~ 1.65MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-LLGA
- Supplier Device Package: 17-LGA (7.65x7.65)
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封装: 17-LLGA |
库存6,960 |
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Infineon Technologies |
IC REG BUCK ADJ SNGL/DL SYNC LGA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1 or 2
- Voltage - Input (Min): 7.5V
- Voltage - Input (Max): 14.5V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 5.5V
- Current - Output: 30A, 15A
- Frequency - Switching: 200kHz ~ 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-LGA
- Supplier Device Package: 36-LGA (9.25x15.5)
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封装: 36-LGA |
库存5,664 |
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Infineon Technologies |
IC BALLAST CTRL 600V 16-SOIC
- Type: Ballast Controller
- Frequency: 43.7kHz ~ 48.3kHz
- Voltage - Supply: 11.5 V ~ 15.6 V
- Current - Supply: 10mA
- Current - Output Source/Sink: -
- Dimming: -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存5,008 |
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Infineon Technologies |
IC MOTOR DRIVER 500V 23DIP
- Output Configuration: Half Bridge (3)
- Applications: AC Motors
- Interface: Logic
- Load Type: Inductive
- Technology: UMOS
- Rds On (Typ): 1 Ohm
- Current - Output / Channel: 2.6A
- Current - Peak Output: 15A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 400V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: UVLO
- Mounting Type: Through Hole
- Package / Case: 32-PowerDIP Module, 23 Leads
- Supplier Device Package: 23-DIP
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封装: 32-PowerDIP Module, 23 Leads |
库存2,976 |
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Infineon Technologies |
IC CURRENT SENSE 600V 1MA 8-DIP
- Function: Current Sense
- Sensing Method: -
- Accuracy: -
- Voltage - Input: 9.5 V ~ 20 V
- Current - Output: 1mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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封装: 8-DIP (0.300", 7.62mm) |
库存5,136 |
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Infineon Technologies |
IC TXRX CAN HS 8DSO
- Type: Transceiver
- Protocol: CAN
- Number of Drivers/Receivers: 1/1
- Duplex: Full
- Receiver Hysteresis: 150mV
- Data Rate: 1MBd
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存17,040 |
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Infineon Technologies |
IC MCU 16BIT 576KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 50K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
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封装: 100-LQFP Exposed Pad |
库存7,040 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH SOT23-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 7.5mT Trip, -7.5mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 26 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: SOT-223-3
- Supplier Device Package: PG-SOT23-3-15
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封装: SOT-223-3 |
库存7,722 |
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Infineon Technologies |
IC AC/DC DGTL PLATFORM 16SOIC
- Output Isolation: -
- Internal Switch(s): -
- Voltage - Breakdown: -
- Topology: -
- Voltage - Start Up: -
- Voltage - Supply (Vcc/Vdd): -
- Duty Cycle: -
- Frequency - Switching: -
- Power (Watts): -
- Fault Protection: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
- Mounting Type: -
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封装: - |
库存3,744 |
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Infineon Technologies |
PROFET
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6V ~ 18V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 4.5A
- Rds On (Typ): 19mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14-22
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封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
库存28,578 |
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Infineon Technologies |
LOW POWER ECONO AG-ECONO2B-411
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 160 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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封装: - |
库存45 |
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Infineon Technologies |
MOSFET N-CH 100V 79A TDSON-8-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 80V 70A 8TDSON-33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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封装: - |
库存20,775 |
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Infineon Technologies |
DIRECTFET PLUS POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 13 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET™ Isometric SQ
- Package / Case: DirectFET™ Isometric SQ
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 8.1875MB FLSH 320BGA
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Quad-Core
- Speed: 100MHz, 350MHz
- Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
- Number of I/O: 240
- Program Memory Size: 8.1875MB (8.1875M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 256 x 8
- RAM Size: 1M x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 114x12b SAR
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 320-LFBGA
- Supplier Device Package: 320-BGA (17x17)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 160KB FLASH 80LQFP
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 72MHz
- Connectivity: CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 60
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 26x12b SAR; D/A 2x10b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-LQFP (12x12)
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封装: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1700V IPM MIPAQP-4
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 65°C (TA)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N/P-CH 8-SOIC
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 94W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSO8
- Package / Case: 8-PowerTDFN
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封装: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
- Number of I/O: 54
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-UFQFN Exposed Pad
- Supplier Device Package: 56-QFN (7x7)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 512MBIT SPI/QUAD 16SOIC
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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封装: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 2900V 6820A DO200AE
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 2.9 kV
- Current - On State (It (AV)) (Max): 6110 A
- Current - On State (It (RMS)) (Max): 6820 A
- Voltage - Gate Trigger (Vgt) (Max): 2.5 V
- Current - Gate Trigger (Igt) (Max): 350 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 100000A @ 50Hz
- Current - Hold (Ih) (Max): 350 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
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封装: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 650V 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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封装: - |
Request a Quote |
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Infineon Technologies |
INT. POWERSTAGE/DRIVER
- Driven Configuration: High-Side and Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 17V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 3A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 90 V
- Rise / Fall Time (Typ): 45ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: PG-VDSON-8-4
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封装: - |
库存35,745 |
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