页 178 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG8P08N120KD-EPBF	Infineon Technologies	IGBT 1200V 15A 89W TO-247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	封装: TO-247-3	库存7,392
BSO072N03S	Infineon Technologies	MOSFET N-CH 30V 12A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存525,084
IRF6609TR1	Infineon Technologies	MOSFET N-CH 20V 31A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MT Package / Case: DirectFET? Isometric MT	封装: DirectFET? Isometric MT	库存217,560
SPA07N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 6.6A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存6,368
IPU50R950CEAKMA2	Infineon Technologies	MOSFET N-CH 500V 4.3A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存5,904
IRFR4104TRPBF	Infineon Technologies	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存59,592
BSZ0902NS	Infineon Technologies	MOSFET N-CH 30V 40A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存47,490
BCX6825H6327XTSA1	Infineon Technologies	TRANSISTOR AF SOT89-4 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V Power - Max: 3W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89	封装: TO-243AA	库存6,656
BCR08PNH6727XTSA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存4,624
TLE72702DATMA1	Infineon Technologies	IC REG LINEAR 5V 300MA TO252-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 200mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 30µA ~ 40µA PSRR: 60dB (100Hz) Control Features: Delay, Reset Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5	封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD	库存5,808
TLE42754GATMA1	Infineon Technologies	IC REG LINEAR 5V 450MA TO263-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 300mA Current - Output: 450mA Current - Quiescent (Iq): - Current - Supply (Max): 200µA ~ 25mA PSRR: 60dB (100Hz) Control Features: Reset Protection Features: Over Current, Over Temperature, Reverse Polarity Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA Supplier Device Package: PG-TO263-5	封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	库存12,966
IR6220STRL	Infineon Technologies	IC DRIVER HIGH SIDE D2PAK Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 5 V ~ 35 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Rds On (Typ): 80 mOhm Input Type: Non-Inverting Features: Status Flag Fault Protection: Current Limiting (Fixed), Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Supplier Device Package: D2Pak (SMD-220 5-Lead)	封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	库存7,280
TDA21106	Infineon Technologies	IC DRIVER DUAL HS MOSFET 8DSO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 45V Rise / Fall Time (Typ): 20ns, 15ns Operating Temperature: -25°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存59,700
PEF 21624 E V2.2-G	Infineon Technologies	IC DSL FRONT-END 2.2V 324-LBGA Function: Symmetrical DSL Front End (SDFE) Interface: HDLC, Serial, TDM Number of Circuits: 1 Voltage - Supply: - Current - Supply: - Power (Watts): 500mW Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 324-LBGA Supplier Device Package: P-LBGA-324	封装: 324-LBGA	库存6,272
XMC1202T016X0016ABXUMA1	Infineon Technologies	IC MCU 32BIT 16KB FLASH 16TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 11 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 11x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-16-8	封装: 16-TSSOP (0.173", 4.40mm Width)	库存4,064
PVO402P-T	Infineon Technologies	IC RELAY PWR 400V 120MA THIN TR Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 35 Ohm Load Current: 120mA Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 400 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 8-SMD (0.300", 7.62mm) Supplier Device Package: Thin-Pak Relay Type: Relay	封装: 8-SMD (0.300", 7.62mm)	库存5,112
CHL8103-15CRT	Infineon Technologies	IC REG BUCK 40VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存4,976
TLE42702DATMA1	Infineon Technologies	IC REG LIN 5V 650MA TO252-5-11 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 550mA Current - Output: 650mA Current - Quiescent (Iq): 1.5mA Current - Supply (Max): 90mA PSRR: 54dB (100Hz) Control Features: Reset Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: PG-TO252-5-11	封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD	库存104,634
FS3L400R10W3S7FB11BPSA1	Infineon Technologies	950 V 400 A EASYPACK MODULE WITH IGBT Type: Trench Field Stop Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 950 V Current - Collector (Ic) (Max): 120 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.48V @ 15V, 45A Current - Collector Cutoff (Max): 26 µA Input Capacitance (Cies) @ Vce: 12.6 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY3B	封装: -	库存24
BAW56B5000	Infineon Technologies	DIODE Diode Configuration: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io) (per Diode): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CY8C4147AZA-S465	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封装: -	Request a Quote
IPP100N12S305AKSA2	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	Request a Quote
315-0649-000AAA	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
S99GL02GS11FHI010	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CY15B102N-ZS60XE	Infineon Technologies	FRAM Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90 ns Voltage - Supply: 2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: -	Request a Quote
SPP80P06PHXKSA1	Infineon Technologies	MOSFET P-CH 60V 80A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	库存20,277
IMBG120R060M1HXTMA1	Infineon Technologies	SICFET N-CH 1.2KV 36A TO263 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V Vgs (Max): +18V, -15V FET Feature: - Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封装: -	库存5,841
IMIC21V01X6SA1	Infineon Technologies	INTELLIGENT POWER MODULE Type: - Configuration: - Current: - Voltage: - Voltage - Isolation: - Package / Case: -	封装: -	Request a Quote
MB3775PF-G-BND-JN-EFE1	Infineon Technologies	IC OFFLINE SWITCH 16SOP Output Isolation: - Internal Switch(s): - Voltage - Breakdown: - Topology: - Voltage - Start Up: - Voltage - Supply (Vcc/Vdd): - Duty Cycle: - Frequency - Switching: - Power (Watts): - Fault Protection: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: - Mounting Type: -	封装: -	Request a Quote
IMZA120R007M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 47mA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-8 Package / Case: TO-247-4	封装: -	库存231

IRG8P08N120KD-EPBF

Infineon Technologies

IGBT 1200V 15A 89W TO-247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): 15A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Power - Max: 89W
Switching Energy: 300µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 45nC
Td (on/off) @ 25°C: 20ns/160ns
Test Condition: 600V, 5A, 47 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

封装: TO-247-3

库存7,392

BSO072N03S

Infineon Technologies

MOSFET N-CH 30V 12A 8DSO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存525,084

IRF6609TR1

Infineon Technologies

MOSFET N-CH 20V 31A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MT
Package / Case: DirectFET? Isometric MT

封装: DirectFET? Isometric MT

库存217,560

SPA07N60CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 6.6A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存6,368

IPU50R950CEAKMA2

Infineon Technologies

MOSFET N-CH 500V 4.3A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存5,904

IRFR4104TRPBF

Infineon Technologies

MOSFET N-CH 40V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存59,592

BSZ0902NS

Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存47,490

BCX6825H6327XTSA1

Infineon Technologies

TRANSISTOR AF SOT89-4

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Power - Max: 3W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89

封装: TO-243AA

库存6,656

BCR08PNH6727XTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 170MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存4,624

TLE72702DATMA1

Infineon Technologies

IC REG LINEAR 5V 300MA TO252-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 42V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 200mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 30µA ~ 40µA
PSRR: 60dB (100Hz)
Control Features: Delay, Reset
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

库存5,808

TLE42754GATMA1

Infineon Technologies

IC REG LINEAR 5V 450MA TO263-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 42V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 300mA
Current - Output: 450mA
Current - Quiescent (Iq): -
Current - Supply (Max): 200µA ~ 25mA
PSRR: 60dB (100Hz)
Control Features: Reset
Protection Features: Over Current, Over Temperature, Reverse Polarity
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Supplier Device Package: PG-TO263-5

封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

库存12,966

IR6220STRL

Infineon Technologies

IC DRIVER HIGH SIDE D2PAK

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 5 V ~ 35 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Rds On (Typ): 80 mOhm
Input Type: Non-Inverting
Features: Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: D2Pak (SMD-220 5-Lead)

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

库存7,280

TDA21106

Infineon Technologies

IC DRIVER DUAL HS MOSFET 8DSO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 45V
Rise / Fall Time (Typ): 20ns, 15ns
Operating Temperature: -25°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存59,700

PEF 21624 E V2.2-G

Infineon Technologies

IC DSL FRONT-END 2.2V 324-LBGA

Function: Symmetrical DSL Front End (SDFE)
Interface: HDLC, Serial, TDM
Number of Circuits: 1
Voltage - Supply: -
Current - Supply: -
Power (Watts): 500mW
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 324-LBGA
Supplier Device Package: P-LBGA-324

封装: 324-LBGA

库存6,272

XMC1202T016X0016ABXUMA1

Infineon Technologies

IC MCU 32BIT 16KB FLASH 16TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 11
Program Memory Size: 16KB (16K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 11x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-16-8

封装: 16-TSSOP (0.173", 4.40mm Width)

库存4,064

PVO402P-T

Infineon Technologies

IC RELAY PWR 400V 120MA THIN TR

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 35 Ohm
Load Current: 120mA
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 400 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 8-SMD (0.300", 7.62mm)
Supplier Device Package: Thin-Pak
Relay Type: Relay

封装: 8-SMD (0.300", 7.62mm)

库存5,112

CHL8103-15CRT

Infineon Technologies

IC REG BUCK 40VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,976

TLE42702DATMA1

Infineon Technologies

IC REG LIN 5V 650MA TO252-5-11

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 42V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.7V @ 550mA
Current - Output: 650mA
Current - Quiescent (Iq): 1.5mA
Current - Supply (Max): 90mA
PSRR: 54dB (100Hz)
Control Features: Reset
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: PG-TO252-5-11

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

库存104,634

FS3L400R10W3S7FB11BPSA1

Infineon Technologies

950 V 400 A EASYPACK MODULE WITH

IGBT Type: Trench Field Stop
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector (Ic) (Max): 120 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.48V @ 15V, 45A
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 12.6 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY3B

封装: -

库存24

BAW56B5000

Infineon Technologies

DIODE

Diode Configuration: -
Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io) (per Diode): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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CY8C4147AZA-S465

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封装: -

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IPP100N12S305AKSA2

Infineon Technologies

MOSFET_(120V 300V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

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315-0649-000AAA

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

S99GL02GS11FHI010

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

CY15B102N-ZS60XE

Infineon Technologies

FRAM

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90 ns
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: -

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SPP80P06PHXKSA1

Infineon Technologies

MOSFET P-CH 60V 80A TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存20,277

IMBG120R060M1HXTMA1

Infineon Technologies

SICFET N-CH 1.2KV 36A TO263

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Vgs (Max): +18V, -15V
FET Feature: -
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

库存5,841

IMIC21V01X6SA1

Infineon Technologies

INTELLIGENT POWER MODULE

Type: -
Configuration: -
Current: -
Voltage: -
Voltage - Isolation: -
Package / Case: -

封装: -

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MB3775PF-G-BND-JN-EFE1

Infineon Technologies

IC OFFLINE SWITCH 16SOP

Output Isolation: -
Internal Switch(s): -
Voltage - Breakdown: -
Topology: -
Voltage - Start Up: -
Voltage - Supply (Vcc/Vdd): -
Duty Cycle: -
Frequency - Switching: -
Power (Watts): -
Fault Protection: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -
Mounting Type: -

封装: -

Request a Quote

IMZA120R007M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 47mA
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 750W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package / Case: TO-247-4

封装: -

库存231