页 151 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG8CH29K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,976
IRG4RC10SPBF	Infineon Technologies	IGBT 600V 14A 38W DPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Power - Max: 38W Switching Energy: 140µJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 25ns/630ns Test Condition: 480V, 8A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,112
IPI80N04S204AKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存7,840
IPP80N08S2L07AKSA1	Infineon Technologies	MOSFET N-CH 75V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: TO-220-3	库存4,704
IRF7769L1TRPBF	Infineon Technologies	MOSFET N-CH 100V 20A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	封装: DirectFET? Isometric L8	库存30,240
PTFA260851E V1	Infineon Technologies	FET RF 65V 2.68GHZ H-30248-2 Transistor Type: LDMOS Frequency: 2.68GHz Gain: 14dB Voltage - Test: 28V Current Rating: 10µA Noise Figure: - Current - Test: 900mA Power - Output: 85W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-30248-2	封装: 2-Flatpack, Fin Leads, Flanged	库存3,440
IRF8910GTRPBF	Infineon Technologies	MOSFET 2N-CH 20V 10A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存564,096
IRF7905TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存617,328
BCR 151T E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 120MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封装: SC-75, SOT-416	库存3,648
62-0254PBF	Infineon Technologies	DIODE SHOCTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,040
IR3473MTRPBF	Infineon Technologies	IC REG BUCK ADJ 6A SYNC PQFN Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 27V Voltage - Output (Min/Fixed): 0.5V Voltage - Output (Max): 12V Current - Output: 6A Frequency - Switching: Up to 750kHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 16-PowerVQFN Supplier Device Package: 16-QFN (4x5)	封装: 16-PowerVQFN	库存3,744
AUIPS6021STRL	Infineon Technologies	IC SW IPS 1CH HIGH SIDE D2PAK-5 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.3A Rds On (Typ): 24 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB Supplier Device Package: D2PAK	封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	库存3,136
IRS2128STRPBF	Infineon Technologies	IC DVR CURRENT SENSE 1CH 8-SOIC Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,912
PEF 20532 F V1.3	Infineon Technologies	IC COMM CTRLR 2CH SER TQFP-100 Function: Serial Optimized Communications Controller Interface: ASYNC, BISYNC, HDLC, PPP Number of Circuits: 2 Voltage - Supply: 3 V ~ 3.6 V Current - Supply: 50mA Power (Watts): 150mW Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: P-TQFP-100	封装: 100-LQFP	库存3,280
SAF-XC878M-13FFI 5V AA	Infineon Technologies	IC MCU 8BIT 52KB FLASH 64LQFP Core Processor: XC800 Core Size: 8-Bit Speed: 27MHz Connectivity: SPI, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 52KB (52K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 3.25K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: 64-LQFP	库存5,472
SLF9630ID1XFSA1	Infineon Technologies	TRANSPORT&TICKETING Applications: Security Core Processor: 16-Bit Program Memory Type: - Controller Series: - RAM Size: - Interface: ISO7816 Number of I/O: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,952
ESD5V0S1U02VH6327XTSA1	Infineon Technologies	TVS DIODE 5VWM 14.5VC SC7921 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 14.5V (Typ) Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Power - Peak Pulse: 66W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2	封装: SC-79, SOD-523	库存3,490
IR3541MSG01TRP	Infineon Technologies	IC REGULATOR PG-VQFN-40-902 Applications: Controller, DDR, Intel VR12, AMD SVI Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	封装: 40-VFQFN Exposed Pad	库存6,032
C164SL8R25M4CAFXUMA3	Infineon Technologies	IC MCU 80MQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,344
CY9AF311NAPMC-GNE2	Infineon Technologies	IC MCU 32BIT 64KB FLASH 100LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封装: -	Request a Quote
BSZ105N04NSGATMA2	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-1 Package / Case: 8-PowerVDFN	封装: -	Request a Quote
2EDL8033G4BXTMA1	Infineon Technologies	INT. POWERSTAGE/DRIVER Output Configuration: - Applications: - Interface: - Load Type: - Technology: - Rds On (Typ): - Current - Output / Channel: - Current - Peak Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Features: - Fault Protection: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存15,000
S25HL01GTFABHB030	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	Request a Quote
IPW65R115CFD7AXKSA1	Infineon Technologies	MOSFET N-CH 650V 21A TO247-3-41 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	封装: -	Request a Quote
S25FL064LABNFM043	Infineon Technologies	IC FLASH 64MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x4)	封装: -	Request a Quote
DDB6U75N16W1RB11BOMA1	Infineon Technologies	IGBT MOD 1200V 69A 335W IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 69 A Power - Max: 335 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
IRF60SC241ARMA1	Infineon Technologies	MOSFET N-CH 60V 360A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 417W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	封装: -	库存6,351
FP15R12YT3BOMA1	Infineon Technologies	IGBT MOD 1200V 25A 110W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 25 A Power - Max: 110 W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote
IPI100N04S303MATMA2	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
S26HS01GTGABHB020	Infineon Technologies	IC FLASH 1GBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 5.45 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	Request a Quote

IRG8CH29K10D

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,976

IRG4RC10SPBF

Infineon Technologies

IGBT 600V 14A 38W DPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Power - Max: 38W
Switching Energy: 140µJ (on), 2.58mJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 25ns/630ns
Test Condition: 480V, 8A, 100 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,112

IPI80N04S204AKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存7,840

IPP80N08S2L07AKSA1

Infineon Technologies

MOSFET N-CH 75V 80A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存4,704

IRF7769L1TRPBF

Infineon Technologies

MOSFET N-CH 100V 20A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 74A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET L8
Package / Case: DirectFET? Isometric L8

封装: DirectFET? Isometric L8

库存30,240

PTFA260851E V1

Infineon Technologies

FET RF 65V 2.68GHZ H-30248-2

Transistor Type: LDMOS
Frequency: 2.68GHz
Gain: 14dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: -
Current - Test: 900mA
Power - Output: 85W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-30248-2

封装: 2-Flatpack, Fin Leads, Flanged

库存3,440

IRF8910GTRPBF

Infineon Technologies

MOSFET 2N-CH 20V 10A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存564,096

IRF7905TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Rds On (Max) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存617,328

BCR 151T E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 120MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

库存3,648

62-0254PBF

Infineon Technologies

DIODE SHOCTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,040

IR3473MTRPBF

Infineon Technologies

IC REG BUCK ADJ 6A SYNC PQFN

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 27V
Voltage - Output (Min/Fixed): 0.5V
Voltage - Output (Max): 12V
Current - Output: 6A
Frequency - Switching: Up to 750kHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-PowerVQFN
Supplier Device Package: 16-QFN (4x5)

封装: 16-PowerVQFN

库存3,744

AUIPS6021STRL

Infineon Technologies

IC SW IPS 1CH HIGH SIDE D2PAK-5

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.3A
Rds On (Typ): 24 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: D2PAK

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

库存3,136

IRS2128STRPBF

Infineon Technologies

IC DVR CURRENT SENSE 1CH 8-SOIC

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,912

PEF 20532 F V1.3

Infineon Technologies

IC COMM CTRLR 2CH SER TQFP-100

Function: Serial Optimized Communications Controller
Interface: ASYNC, BISYNC, HDLC, PPP
Number of Circuits: 2
Voltage - Supply: 3 V ~ 3.6 V
Current - Supply: 50mA
Power (Watts): 150mW
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: P-TQFP-100

封装: 100-LQFP

库存3,280

SAF-XC878M-13FFI 5V AA

Infineon Technologies

IC MCU 8BIT 52KB FLASH 64LQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 27MHz
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 52KB (52K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 3.25K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

库存5,472

SLF9630ID1XFSA1

Infineon Technologies

TRANSPORT&TICKETING

Applications: Security
Core Processor: 16-Bit
Program Memory Type: -
Controller Series: -
RAM Size: -
Interface: ISO7816
Number of I/O: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,952

ESD5V0S1U02VH6327XTSA1

Infineon Technologies

TVS DIODE 5VWM 14.5VC SC7921

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 14.5V (Typ)
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Power - Peak Pulse: 66W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2

封装: SC-79, SOD-523

库存3,490

IR3541MSG01TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-902

Applications: Controller, DDR, Intel VR12, AMD SVI
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

封装: 40-VFQFN Exposed Pad

库存6,032

C164SL8R25M4CAFXUMA3

Infineon Technologies

IC MCU 80MQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,344

CY9AF311NAPMC-GNE2

Infineon Technologies

IC MCU 32BIT 64KB FLASH 100LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封装: -

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BSZ105N04NSGATMA2

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-1
Package / Case: 8-PowerVDFN

封装: -

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2EDL8033G4BXTMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER

Output Configuration: -
Applications: -
Interface: -
Load Type: -
Technology: -
Rds On (Typ): -
Current - Output / Channel: -
Current - Peak Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Features: -
Fault Protection: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存15,000

S25HL01GTFABHB030

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

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IPW65R115CFD7AXKSA1

Infineon Technologies

MOSFET N-CH 650V 21A TO247-3-41

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

封装: -

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S25FL064LABNFM043

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x4)

封装: -

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DDB6U75N16W1RB11BOMA1

Infineon Technologies

IGBT MOD 1200V 69A 335W

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 69 A
Power - Max: 335 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

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IRF60SC241ARMA1

Infineon Technologies

MOSFET N-CH 60V 360A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封装: -

库存6,351

FP15R12YT3BOMA1

Infineon Technologies

IGBT MOD 1200V 25A 110W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Power - Max: 110 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

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IPI100N04S303MATMA2

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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S26HS01GTGABHB020

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 5.45 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

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