页 135 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

IPC60R3K3C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,792

-

IPU50R950CEAKMA2

Infineon Technologies

MOSFET N-CH 500V 4.3A TO251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存5,904

MOSFET (Metal Oxide)

500V

4.3A (Tc)

13V

3.5V @ 100µA

10.5nC @ 10V

231pF @ 100V

±20V

-

53W (Tc)

950 mOhm @ 1.2A, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IPD50R1K4CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存4,896

MOSFET (Metal Oxide)

500V

3.1A (Tc)

13V

3.5V @ 70µA

8.2nC @ 10V

178pF @ 100V

±20V

-

42W (Tc)

1.4 Ohm @ 900mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

IPN70R2K1CEATMA1

Infineon Technologies

MOSFET COOLMOS 700V SOT223-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存5,696

MOSFET (Metal Oxide)

750V

4A (Tc)

10V

3.5V @ 70µA

7.8nC @ 10V

163pF @ 100V

±20V

-

5W (Tc)

2.1 Ohm @ 1A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

IPS60R2K1CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,752

-

BSL802SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 7.5A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs(th) (Max) @ Id: 0.75V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存5,616

MOSFET (Metal Oxide)

20V

7.5A (Ta)

1.8V, 2.5V

0.75V @ 30µA

4.7nC @ 2.5V

1347pF @ 10V

±8V

-

2W (Ta)

22 mOhm @ 7.5A, 2.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

BSL302SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 30V 7.1A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存2,416

MOSFET (Metal Oxide)

30V

7.1A (Ta)

4.5V, 10V

2V @ 30µA

6.6nC @ 5V

750pF @ 15V

±20V

-

2W (Ta)

25 mOhm @ 7.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

P-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IPN60R1K5CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,864

-

BSL202SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 7.5A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,344

MOSFET (Metal Oxide)

20V

7.5A (Ta)

2.5V, 4.5V

1.2V @ 30µA

8.7nC @ 10V

1147pF @ 10V

±12V

-

2W (Ta)

22 mOhm @ 7.5A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IPD50R2K0CEBTMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,160

-

IPU50R1K4CEAKMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存3,440

MOSFET (Metal Oxide)

500V

3.1A (Tc)

13V

3.5V @ 70µA

8.2nC @ 10V

178pF @ 100V

±20V

-

42W (Tc)

1.4 Ohm @ 900mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IPD50R2K0CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 2.4A PG-TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,856

MOSFET (Metal Oxide)

500V

2.4A (Tc)

13V

3.5V @ 50µA

6nC @ 10V

124pF @ 100V

±20V

-

33W (Tc)

2 Ohm @ 600mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BSL305SPEH6327XTSA1

Infineon Technologies

MOSFET P-CH 30V 5.3A TSOP-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,312

MOSFET (Metal Oxide)

30V

5.3A (Ta)

4.5V, 10V

2V @ 20µA

14nC @ 10V

939pF @ 15V

±20V

-

2W (Ta)

45 mOhm @ 5.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

IRFH8330TRPBF

Infineon Technologies

MOSFET N-CH 30V 56A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存6,432

MOSFET (Metal Oxide)

30V

17A (Ta), 56A (Tc)

4.5V, 10V

2.35V @ 25µA

20nC @ 10V

1450pF @ 25V

±20V

-

3.3W (Ta), 35W (Tc)

6.6 mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PQFN (5x6)

8-PowerTDFN

IPU60R2K1CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,528

-

IPU50R2K0CEAKMA1

Infineon Technologies

MOSFET N-CH 500V 2.4A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存2,032

MOSFET (Metal Oxide)

500V

2.4A (Tc)

13V

3.5V @ 50µA

6nC @ 10V

124pF @ 100V

±20V

-

33W (Tc)

2 Ohm @ 600mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IPN50R950CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,800

-

IPU50R3K0CEAKMA1

Infineon Technologies

MOSFET N-CH 500V 1.7A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存6,160

MOSFET (Metal Oxide)

500V

1.7A (Tc)

13V

3.5V @ 30µA

4.3nC @ 10V

84pF @ 100V

±20V

-

26W (Tc)

3 Ohm @ 400mA, 13V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO251

TO-251-3 Short Leads, IPak, TO-251AA

IRFHS8242TRPBF

Infineon Technologies

MOSFET N-CH 25V 9.9A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-PQFN (2x2)
Package / Case: 6-PowerVDFN

封装: 6-PowerVDFN

库存482,568

MOSFET (Metal Oxide)

25V

9.9A (Ta), 21A (Tc)

4.5V, 10V

2.35V @ 25µA

10.4nC @ 10V

653pF @ 10V

±20V

-

2.1W (Ta)

13 mOhm @ 8.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

6-PQFN (2x2)

6-PowerVDFN

BSS192PH6327XTSA1

Infineon Technologies

MOSFET P-CH 250V 190MA SOT89

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT89
Package / Case: TO-243AA

封装: TO-243AA

库存6,992

MOSFET (Metal Oxide)

250V

190mA (Ta)

2.8V, 10V

2V @ 130µA

6.1nC @ 10V

104pF @ 25V

±20V

-

1W (Ta)

12 Ohm @ 190mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT89

TO-243AA

BSL716SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 75V 2.5A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,392

MOSFET (Metal Oxide)

75V

2.5A (Ta)

4.5V, 10V

1.8V @ 218µA

13.1nC @ 10V

315pF @ 25V

±20V

-

2W (Ta)

150 mOhm @ 2.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

BSS87H6327XTSA1

Infineon Technologies

MOSFET N-CH 240V 260MA SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT89-4-2
Package / Case: TO-243AA

封装: TO-243AA

库存6,192

MOSFET (Metal Oxide)

240V

260mA (Ta)

4.5V, 10V

1.8V @ 108µA

5.5nC @ 10V

97pF @ 25V

±20V

-

1W (Ta)

6 Ohm @ 260mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT89-4-2

TO-243AA

BSS225H6327XTSA1

Infineon Technologies

MOSFET N-CH 600V 90MA SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT89
Package / Case: TO-243AA

封装: TO-243AA

库存3,440

MOSFET (Metal Oxide)

600V

90mA (Ta)

4.5V, 10V

2.3V @ 94µA

5.8nC @ 10V

131pF @ 25V

±20V

-

1W (Ta)

45 Ohm @ 90mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT89

TO-243AA

BSP716NH6327XTSA1

Infineon Technologies

MOSFET N-CH 75V 2.3A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存3,264

MOSFET (Metal Oxide)

75V

2.3A (Ta)

4.5V, 10V

1.8V @ 218µA

13.1nC @ 10V

315pF @ 25V

±20V

-

1.8W (Ta)

160 mOhm @ 2.3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

IPN50R2K0CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,480

-

IPN50R1K4CEATMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,272

-

IPU60R3K4CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,488

-

IPS60R3K4CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存6,784

-

IPD60R3K4CEAUMA1

Infineon Technologies

MOSFET N-CH TO-252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,904

MOSFET (Metal Oxide)

650V

2.6A (Tc)

10V

3.5V @ 40µA

4.6nC @ 10V

93pF @ 100V

±20V

-

29W (Tc)

3.4 Ohm @ 500mA, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

SISC185N06LX1SA1

Infineon Technologies

TRANSISTOR P-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,936

-

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPC60R3K3C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,792	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R950CEAKMA2	Infineon Technologies	MOSFET N-CH 500V 4.3A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存5,904	MOSFET (Metal Oxide)	500V	4.3A (Tc)	13V	3.5V @ 100µA	10.5nC @ 10V	231pF @ 100V	±20V	-	53W (Tc)	950 mOhm @ 1.2A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IPD50R1K4CEAUMA1	Infineon Technologies	MOSFET N-CH 500V 3.1A PG-TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存4,896	MOSFET (Metal Oxide)	500V	3.1A (Tc)	13V	3.5V @ 70µA	8.2nC @ 10V	178pF @ 100V	±20V	-	42W (Tc)	1.4 Ohm @ 900mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPN70R2K1CEATMA1	Infineon Technologies	MOSFET COOLMOS 700V SOT223-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存5,696	MOSFET (Metal Oxide)	750V	4A (Tc)	10V	3.5V @ 70µA	7.8nC @ 10V	163pF @ 100V	±20V	-	5W (Tc)	2.1 Ohm @ 1A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IPS60R2K1CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,752	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSL802SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 7.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存5,616	MOSFET (Metal Oxide)	20V	7.5A (Ta)	1.8V, 2.5V	0.75V @ 30µA	4.7nC @ 2.5V	1347pF @ 10V	±8V	-	2W (Ta)	22 mOhm @ 7.5A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
BSL302SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 30V 7.1A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存2,416	MOSFET (Metal Oxide)	30V	7.1A (Ta)	4.5V, 10V	2V @ 30µA	6.6nC @ 5V	750pF @ 15V	±20V	-	2W (Ta)	25 mOhm @ 7.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	P-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IPN60R1K5CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存4,864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSL202SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 7.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存3,344	MOSFET (Metal Oxide)	20V	7.5A (Ta)	2.5V, 4.5V	1.2V @ 30µA	8.7nC @ 10V	1147pF @ 10V	±12V	-	2W (Ta)	22 mOhm @ 7.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IPD50R2K0CEBTMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,160	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R1K4CEAKMA1	Infineon Technologies	MOSFET N-CH 500V 3.1A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存3,440	MOSFET (Metal Oxide)	500V	3.1A (Tc)	13V	3.5V @ 70µA	8.2nC @ 10V	178pF @ 100V	±20V	-	42W (Tc)	1.4 Ohm @ 900mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPD50R2K0CEAUMA1	Infineon Technologies	MOSFET N-CH 500V 2.4A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,856	MOSFET (Metal Oxide)	500V	2.4A (Tc)	13V	3.5V @ 50µA	6nC @ 10V	124pF @ 100V	±20V	-	33W (Tc)	2 Ohm @ 600mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSL305SPEH6327XTSA1	Infineon Technologies	MOSFET P-CH 30V 5.3A TSOP-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存3,312	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	2V @ 20µA	14nC @ 10V	939pF @ 15V	±20V	-	2W (Ta)	45 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IRFH8330TRPBF	Infineon Technologies	MOSFET N-CH 30V 56A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存6,432	MOSFET (Metal Oxide)	30V	17A (Ta), 56A (Tc)	4.5V, 10V	2.35V @ 25µA	20nC @ 10V	1450pF @ 25V	±20V	-	3.3W (Ta), 35W (Tc)	6.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-PowerTDFN
IPU60R2K1CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R2K0CEAKMA1	Infineon Technologies	MOSFET N-CH 500V 2.4A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存2,032	MOSFET (Metal Oxide)	500V	2.4A (Tc)	13V	3.5V @ 50µA	6nC @ 10V	124pF @ 100V	±20V	-	33W (Tc)	2 Ohm @ 600mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IPN50R950CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,800	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU50R3K0CEAKMA1	Infineon Technologies	MOSFET N-CH 500V 1.7A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存6,160	MOSFET (Metal Oxide)	500V	1.7A (Tc)	13V	3.5V @ 30µA	4.3nC @ 10V	84pF @ 100V	±20V	-	26W (Tc)	3 Ohm @ 400mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO251	TO-251-3 Short Leads, IPak, TO-251AA
IRFHS8242TRPBF	Infineon Technologies	MOSFET N-CH 25V 9.9A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	封装: 6-PowerVDFN	库存482,568	MOSFET (Metal Oxide)	25V	9.9A (Ta), 21A (Tc)	4.5V, 10V	2.35V @ 25µA	10.4nC @ 10V	653pF @ 10V	±20V	-	2.1W (Ta)	13 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-PQFN (2x2)	6-PowerVDFN
BSS192PH6327XTSA1	Infineon Technologies	MOSFET P-CH 250V 190MA SOT89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	封装: TO-243AA	库存6,992	MOSFET (Metal Oxide)	250V	190mA (Ta)	2.8V, 10V	2V @ 130µA	6.1nC @ 10V	104pF @ 25V	±20V	-	1W (Ta)	12 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
BSL716SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 75V 2.5A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存3,392	MOSFET (Metal Oxide)	75V	2.5A (Ta)	4.5V, 10V	1.8V @ 218µA	13.1nC @ 10V	315pF @ 25V	±20V	-	2W (Ta)	150 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
BSS87H6327XTSA1	Infineon Technologies	MOSFET N-CH 240V 260MA SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89-4-2 Package / Case: TO-243AA	封装: TO-243AA	库存6,192	MOSFET (Metal Oxide)	240V	260mA (Ta)	4.5V, 10V	1.8V @ 108µA	5.5nC @ 10V	97pF @ 25V	±20V	-	1W (Ta)	6 Ohm @ 260mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89-4-2	TO-243AA
BSS225H6327XTSA1	Infineon Technologies	MOSFET N-CH 600V 90MA SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT89 Package / Case: TO-243AA	封装: TO-243AA	库存3,440	MOSFET (Metal Oxide)	600V	90mA (Ta)	4.5V, 10V	2.3V @ 94µA	5.8nC @ 10V	131pF @ 25V	±20V	-	1W (Ta)	45 Ohm @ 90mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT89	TO-243AA
BSP716NH6327XTSA1	Infineon Technologies	MOSFET N-CH 75V 2.3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存3,264	MOSFET (Metal Oxide)	75V	2.3A (Ta)	4.5V, 10V	1.8V @ 218µA	13.1nC @ 10V	315pF @ 25V	±20V	-	1.8W (Ta)	160 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IPN50R2K0CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存4,480	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPN50R1K4CEATMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存4,272	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPU60R3K4CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPS60R3K4CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存6,784	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD60R3K4CEAUMA1	Infineon Technologies	MOSFET N-CH TO-252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,904	MOSFET (Metal Oxide)	650V	2.6A (Tc)	10V	3.5V @ 40µA	4.6nC @ 10V	93pF @ 100V	±20V	-	29W (Tc)	3.4 Ohm @ 500mA, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
SISC185N06LX1SA1	Infineon Technologies	TRANSISTOR P-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,936	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-