页 24 - Infineon Technologies 产品 - 二极管 - 整流器 - 单

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDH20G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 20A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 700µA @ 650V Capacitance @ Vr, F: 590pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存5,232	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	700µA @ 650V	590pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDW30G65C5FKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 30A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.1mA @ 650V Capacitance @ Vr, F: 860pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存6,352	650V	30A (DC)	1.7V @ 30A	No Recovery Time > 500mA (Io)	0ns	1.1mA @ 650V	860pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDH08G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 280µA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存2,576	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	280µA @ 650V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH05G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 170µA @ 650V Capacitance @ Vr, F: 160pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存2,160	650V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	170µA @ 650V	160pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH10G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 340µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存2,992	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	340µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDY15S120XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 7.5A TO247 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 1200V Capacitance @ Vr, F: 375pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-247-3 Variant	库存2,464	1200V	7.5A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 1200V	375pF @ 1V, 1MHz	Through Hole	TO-247-3 Variant	PG-TO247HC-3	-55°C ~ 150°C
IDY10S120XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 5A TO247HC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 120µA @ 1200V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3 Variant	库存2,096	1200V	5A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	120µA @ 1200V	250pF @ 1V, 1MHz	Through Hole	TO-247-3 Variant	PG-TO247HC-3	-55°C ~ 175°C
IDV30E60C	Infineon Technologies	DIODE GEN PURP 600V 21A TO22FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 21A Voltage - Forward (Vf) (Max) @ If: 2.05V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 130ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存7,632	600V	21A	2.05V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	40µA @ 600V	-	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDB23E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 41A TO263-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 41A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 23A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,952	600V	41A (DC)	2V @ 23A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2	-55°C ~ 175°C
IDB12E120ATMA1	Infineon Technologies	DIODE GEN PURP 1.2KV 28A TO263-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 28A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,264	1200V	28A (DC)	2.15V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	100µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2	-55°C ~ 150°C
IDV06S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 600V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存6,640	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDV05S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存7,808	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDV04S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 4A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存7,600	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDP23E60	Infineon Technologies	DIODE GEN PURP 600V 41A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 41A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 23A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存2,096	600V	41A (DC)	2V @ 23A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDP09E120	Infineon Technologies	DIODE GEN PURP 1.2KV 23A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 23A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存7,888	1200V	23A (DC)	2.15V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDP06E60	Infineon Technologies	DIODE GEN PURP 600V 14.7A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 14.7A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存143,376	600V	14.7A (DC)	2V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDP04E120	Infineon Technologies	DIODE GEN PURP 1.2KV 11.2A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 11.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存40,020	1200V	11.2A (DC)	2.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 150°C
IDD03E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 7.3A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 7.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 62ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,944	600V	7.3A (DC)	2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	62ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDB45E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 71A TO263-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 71A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 45A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,480	600V	71A (DC)	2V @ 45A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-55°C ~ 175°C
IDB18E120ATMA1	Infineon Technologies	DIODE GEN PURP 1.2KV 31A TO263-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 31A (DC) Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 195ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,792	1200V	31A (DC)	2.15V @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	195ns	100µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-55°C ~ 150°C
IDB15E60	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.2A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,848	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-55°C ~ 175°C
IDB09E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 19.3A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 19.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,672	600V	19.3A (DC)	2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-55°C ~ 175°C
BAS3020BH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 2A SOT363-6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Operating Temperature - Junction: -55°C ~ 125°C	封装: 6-VSSOP, SC-88, SOT-363	库存3,376	30V	2A (DC)	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	70pF @ 1V, 1MHz	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6	-55°C ~ 125°C
BAT6402WH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SCD80-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Operating Temperature - Junction: 150°C (Max)	封装: SC-80	库存4,640	40V	120mA	750mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	6pF @ 1V, 1MHz	Surface Mount	SC-80	PG-SCD80-2	150°C (Max)
IDV03S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 3A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: 90pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存3,264	600V	3A (DC)	1.9V @ 3A	No Recovery Time > 500mA (Io)	0ns	30µA @ 600V	90pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDV02S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 2A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack	库存3,360	600V	2A (DC)	1.9V @ 2A	No Recovery Time > 500mA (Io)	0ns	15µA @ 600V	60pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDH15S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 15A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 360µA @ 1200V Capacitance @ Vr, F: 750pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存2,112	1200V	15A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	360µA @ 1200V	750pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH10S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 240µA @ 1200V Capacitance @ Vr, F: 500pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存3,216	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	240µA @ 1200V	500pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH09SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 9A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 9A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 600V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存6,928	600V	9A (DC)	2.1V @ 9A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDH08S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 7.5A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 1200V Capacitance @ Vr, F: 380pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存4,480	1200V	7.5A (DC)	1.8V @ 7.5A	No Recovery Time > 500mA (Io)	0ns	180µA @ 1200V	380pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C

IDH20G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 20A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 700µA @ 650V
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存5,232

650V

20A (DC)

1.7V @ 20A

No Recovery Time > 500mA (Io)

0ns

700µA @ 650V

590pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDW30G65C5FKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 30A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.1mA @ 650V
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存6,352

650V

30A (DC)

1.7V @ 30A

No Recovery Time > 500mA (Io)

0ns

1.1mA @ 650V

860pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDH08G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 280µA @ 650V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存2,576

650V

8A (DC)

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

280µA @ 650V

250pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDH05G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 5A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 170µA @ 650V
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存2,160

650V

5A (DC)

1.7V @ 5A

No Recovery Time > 500mA (Io)

0ns

170µA @ 650V

160pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDH10G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 340µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存2,992

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

340µA @ 650V

300pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDY15S120XKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 7.5A TO247

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 1200V
Capacitance @ Vr, F: 375pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-247-3 Variant

库存2,464

1200V

7.5A (DC)

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

180µA @ 1200V

375pF @ 1V, 1MHz

Through Hole

TO-247-3 Variant

PG-TO247HC-3

-55°C ~ 150°C

IDY10S120XKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 5A TO247HC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 120µA @ 1200V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3 Variant

库存2,096

1200V

5A (DC)

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

120µA @ 1200V

250pF @ 1V, 1MHz

Through Hole

TO-247-3 Variant

PG-TO247HC-3

-55°C ~ 175°C

IDV30E60C

Infineon Technologies

DIODE GEN PURP 600V 21A TO22FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 21A
Voltage - Forward (Vf) (Max) @ If: 2.05V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130ns
Current - Reverse Leakage @ Vr: 40µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存7,632

600V

21A

2.05V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

130ns

40µA @ 600V

-

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

IDB23E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 41A TO263-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 41A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,952

600V

41A (DC)

2V @ 23A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3-2

-55°C ~ 175°C

IDB12E120ATMA1

Infineon Technologies

DIODE GEN PURP 1.2KV 28A TO263-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 28A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,264

1200V

28A (DC)

2.15V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

100µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3-2

-55°C ~ 150°C

IDV06S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 600V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存6,640

600V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

80µA @ 600V

280pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

IDV05S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 5A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 600V
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存7,808

600V

5A (DC)

1.7V @ 5A

No Recovery Time > 500mA (Io)

0ns

70µA @ 600V

240pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

IDV04S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 4A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存7,600

600V

4A (DC)

1.9V @ 4A

No Recovery Time > 500mA (Io)

0ns

50µA @ 600V

130pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

IDP23E60

Infineon Technologies

DIODE GEN PURP 600V 41A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 41A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 23A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存2,096

600V

41A (DC)

2V @ 23A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

50µA @ 600V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDP09E120

Infineon Technologies

DIODE GEN PURP 1.2KV 23A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 23A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存7,888

1200V

23A (DC)

2.15V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

100µA @ 1200V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 150°C

IDP06E60

Infineon Technologies

DIODE GEN PURP 600V 14.7A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 14.7A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存143,376

600V

14.7A (DC)

2V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

50µA @ 600V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDP04E120

Infineon Technologies

DIODE GEN PURP 1.2KV 11.2A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 11.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存40,020

1200V

11.2A (DC)

2.15V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

115ns

100µA @ 1200V

-

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 150°C

IDD03E60BUMA1

Infineon Technologies

DIODE GEN PURP 600V 7.3A TO252-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 7.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 62ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,944

600V

7.3A (DC)

2V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

62ns

50µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

IDB45E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 71A TO263-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 71A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 45A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,480

600V

71A (DC)

2V @ 45A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3

-55°C ~ 175°C

IDB18E120ATMA1

Infineon Technologies

DIODE GEN PURP 1.2KV 31A TO263-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 31A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 18A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 195ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,792

1200V

31A (DC)

2.15V @ 18A

Fast Recovery =< 500ns, > 200mA (Io)

195ns

100µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3

-55°C ~ 150°C

IDB15E60

Infineon Technologies

DIODE GEN PURP 600V 29.2A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,848

600V

29.2A (DC)

2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

87ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3

-55°C ~ 175°C

IDB09E60ATMA1

Infineon Technologies

DIODE GEN PURP 600V 19.3A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 19.3A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,672

600V

19.3A (DC)

2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3

-55°C ~ 175°C

BAS3020BH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 2A SOT363-6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6
Operating Temperature - Junction: -55°C ~ 125°C

封装: 6-VSSOP, SC-88, SOT-363

库存3,376

30V

2A (DC)

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

70pF @ 1V, 1MHz

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

-55°C ~ 125°C

BAT6402WH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SCD80-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C (Max)

封装: SC-80

库存4,640

40V

120mA

750mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 30V

6pF @ 1V, 1MHz

Surface Mount

SC-80

PG-SCD80-2

150°C (Max)

IDV03S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 3A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存3,264

600V

3A (DC)

1.9V @ 3A

No Recovery Time > 500mA (Io)

0ns

30µA @ 600V

90pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

IDV02S60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 2A TO220-2FP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack

库存3,360

600V

2A (DC)

1.9V @ 2A

No Recovery Time > 500mA (Io)

0ns

15µA @ 600V

60pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

PG-TO220-2 Full Pack

-55°C ~ 175°C

IDH15S120AKSA1

Infineon Technologies

DIODE SCHOTTKY 1200V 15A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 360µA @ 1200V
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存2,112

1200V

15A (DC)

1.8V @ 15A

No Recovery Time > 500mA (Io)

0ns

360µA @ 1200V

750pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDH10S120AKSA1

Infineon Technologies

DIODE SCHOTTKY 1200V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 240µA @ 1200V
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存3,216

1200V

10A (DC)

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

240µA @ 1200V

500pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDH09SG60CXKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 9A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 9A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 9A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 600V
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存6,928

600V

9A (DC)

2.1V @ 9A

No Recovery Time > 500mA (Io)

0ns

80µA @ 600V

280pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

IDH08S120AKSA1

Infineon Technologies

DIODE SCHOTTKY 1.2KV 7.5A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 1200V
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存4,480

1200V

7.5A (DC)

1.8V @ 7.5A

No Recovery Time > 500mA (Io)

0ns

180µA @ 1200V

380pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C