页 480 - Diodes Incorporated 产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802

Diodes Incorporated 产品

记录 22,098
页  480/737
图片
零件编号
制造商
描述
封装
库存
数量
WT3253I0026.000000
Diodes Incorporated

OSC TCXO 26.000MHZ CLP SNWV SMD

  • Type: TCXO
  • Frequency: 26MHz
  • Function: -
  • Output: Clipped Sine Wave
  • Voltage - Supply: 1.8V
  • Frequency Stability: ±2ppm
  • Operating Temperature: -30°C ~ 85°C
  • Current - Supply (Max): 1.5mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
  • Height - Seated (Max): 0.047" (1.20mm)
封装: 4-SMD, No Lead
库存2,178
JX7011D0104.000000
Diodes Incorporated

OSC XO 104.000MHZ CMOS SMD

  • Type: XO (Standard)
  • Frequency: 104MHz
  • Function: Enable/Disable
  • Output: CMOS
  • Voltage - Supply: 3.3V
  • Frequency Stability: ±25ppm
  • Operating Temperature: -40°C ~ 85°C
  • Current - Supply (Max): 45mA
  • Ratings: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
  • Height - Seated (Max): 0.079" (2.00mm)
封装: 6-SMD, No Lead
库存4,968
ZXMN6A25G
Diodes Incorporated

MOSFET N-CH 60V 4.8A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存7,760
DMN6069SFG-7
Diodes Incorporated

MOSFET N-CH 60V 5.6A POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存2,448
hot ZXMN2A03E6TA
Diodes Incorporated

MOSFET N-CH 20V 3.6A SOT-23-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 7.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存1,627,668
DMC6040SSDQ-13
Diodes Incorporated

MOSFET N/P-CH 60V 5.1A 8SO

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Power - Max: 1.24W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,064
hot DCP55-13
Diodes Incorporated

TRANS NPN 60V 1A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存30,000
hot ZTX751
Diodes Incorporated

TRANS PNP 60V 2A E-LINE

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 1W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: E-Line-3
  • Supplier Device Package: E-Line (TO-92 compatible)
封装: E-Line-3
库存494,316
MMBZ5238BTS-7-F
Diodes Incorporated

DIODE ZENER ARRAY 8.7V SOT363

  • Configuration: 3 Independent
  • Voltage - Zener (Nom) (Vz): 8.7V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 3µA @ 6.5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存3,568
ZC836ATA
Diodes Incorporated

DIODE VAR CAP 100PF 25V SOT23-3

  • Capacitance @ Vr, F: 110pF @ 2V, 1MHz
  • Capacitance Ratio: 6.5
  • Capacitance Ratio Condition: C2/C20
  • Voltage - Peak Reverse (Max): 25V
  • Diode Type: Single
  • Q @ Vr, F: 100 @ 3V, 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存5,648
hot GBJ602
Diodes Incorporated

RECT BRIDGE GPP 200V 6A GBJ

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封装: 4-SIP, GBJ
库存19,020
GBJ3510-F
Diodes Incorporated

BRIDGE RECTIFIER GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJ
  • Supplier Device Package: GBJ
封装: 4-SIP, GBJ
库存2,512
hot AP431QL-7
Diodes Incorporated

IC VREF SHUNT ADJ SOT25

  • Reference Type: Shunt
  • Output Type: Adjustable
  • Voltage - Output (Min/Fixed): 2.495V
  • Voltage - Output (Max): 36V
  • Current - Output: 200mA
  • Tolerance: ±1%
  • Temperature Coefficient: 30ppm/°C
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: -
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: 500µA
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-25
封装: SC-74A, SOT-753
库存423,360
AP2820EMM-G1
Diodes Incorporated

IC USB POWER SWITCH 8MSOP

  • Switch Type: USB Switch
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 2.7 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.5A
  • Rds On (Typ): 60 mOhm
  • Input Type: Non-Inverting
  • Features: Status Flag
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存6,240
PT74HC164WF
Diodes Incorporated

IC LOGIC

  • Logic Type: -
  • Number of Elements: -
  • Number of Bits per Element: -
  • Input Type: -
  • Output Type: -
  • Current - Output High, Low: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,384
LM2903AQM8-13
Diodes Incorporated

IC COMP DUAL DIFFERENTIAL 8MSOP

  • Type: Differential
  • Number of Elements: 2
  • Output Type: CMOS, MOS, Open-Collector, TTL
  • Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V
  • Voltage - Input Offset (Max): 2mV @ 5V
  • Current - Input Bias (Max): 250nA @ 5V
  • Current - Output (Typ): 16mA @ 5V
  • Current - Quiescent (Max): 1.7mA
  • CMRR, PSRR (Typ): -
  • Propagation Delay (Max): -
  • Hysteresis: -
  • Operating Temperature: -40°C ~ 125°C
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MSOP
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存4,208
1.5KE33CA-B
Diodes Incorporated

TVS DIODE 28.2VWM 45.7VC DO201

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 28.2V
  • Voltage - Breakdown (Min): 31.4V
  • Voltage - Clamping (Max) @ Ipp: 45.7V
  • Current - Peak Pulse (10/1000µs): 33A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201
封装: DO-201AA, DO-27, Axial
库存3,906
PI5USB2544AZHE
Diodes Incorporated

IC USB HOST CONTROLLER 16TQFN

  • Applications: -
  • Multiplexer/Demultiplexer Circuit: -
  • Switch Circuit: -
  • Number of Channels: -
  • On-State Resistance (Max): -
  • Voltage - Supply, Single (V+): -
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,104
PT7C5029C-5GWF
Diodes Incorporated

XOIC WAFER

  • PLL: -
  • Main Purpose: -
  • Input: -
  • Output: -
  • Number of Circuits: -
  • Ratio - Input:Output: -
  • Differential - Input:Output: -
  • Frequency - Max: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,112
PI3USB3200ZBBEX
Diodes Incorporated

USB3 SWITCH V-QFN4525-20

  • Applications: USB
  • Multiplexer/Demultiplexer Circuit: 3:2
  • Switch Circuit: -
  • Number of Channels: 3
  • On-State Resistance (Max): -
  • Voltage - Supply, Single (V+): 2.7V ~ 4V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: 7GHz
  • Features: USB 2.0, USB 3.1
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 20-VFQFN Exposed Pad
  • Supplier Device Package: 20-TQFN (2.5x4.5)
封装: 20-VFQFN Exposed Pad
库存23,118
PI4GTL2002UEX
Diodes Incorporated

INTERFACE GTL 2.5K 8-MSOP

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 1
  • Channels per Circuit: 2
  • Voltage - VCCA: -
  • Voltage - VCCB: -
  • Input Signal: -
  • Output Signal: -
  • Output Type: Open Drain
  • Data Rate: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Features: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存20,610
BAS70LP-7B-79
Diodes Incorporated

DIODE SCHOTTKY 70V 70MA 2DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1.6 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 70 V
  • Capacitance @ Vr, F: 1pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: X1-DFN1006-2
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
DMN3066LVT-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
Request a Quote
74LVC3G14SS8-7
Diodes Incorporated

IC INVERT SCHMITT 3CH 3INP 8SSOP

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 3
  • Features: Schmitt Trigger
  • Voltage - Supply: 1.65V ~ 5.5V
  • Current - Quiescent (Max): 10 µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: 0.7V ~ 2.5V
  • Logic Level - High: 1.4V ~ 3.7V
  • Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SSOP
  • Package / Case: 8-LSSOP, 8-MSOP (0.110", 2.80mm Width)
封装: -
库存8,670
ZXTN2005ZQTA
Diodes Incorporated

TRANS NPN 25V 5.5A SOT89-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5.5 A
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 150mA, 6.5A
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
  • Power - Max: 1.5 W
  • Frequency - Transition: 150MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
封装: -
库存3,000
DMP4009SPSW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
DMN1021UCA4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-TSN0808-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 409 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 690mW
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 1.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-TSN0808-4
  • Package / Case: 4-XFDFN
封装: -
Request a Quote
B260AE-13-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: 75pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
BZX84C36TQ-7-F
Diodes Incorporated

ZENER DIODE SOT523 T&R 3K

  • Voltage - Zener (Nom) (Vz): 34 V
  • Tolerance: ±2.94%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 25.2 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封装: -
Request a Quote
DMTH43M8LFG-13
Diodes Incorporated

MOSFET N-CH 40V PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
Request a Quote