页 470 - Diodes Incorporated 产品

零件编号	制造商	描述	封装	库存
FK1200010	Diodes Incorporated	OSCILLATOR XO 12.000MHZ CMOS SMD Type: XO (Standard) Frequency: 12MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 10mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.045" (1.15mm)	封装: 4-SMD, No Lead	库存4,680
FD2500054	Diodes Incorporated	OSCILLATOR XO 25.000MHZ CMOS SMD Type: XO (Standard) Frequency: 25MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Current - Supply (Max): 15mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Height - Seated (Max): 0.051" (1.30mm)	封装: 4-SMD, No Lead	库存8,802
FNDDR1133	Diodes Incorporated	OSCILLATOR XO 133.33MHZ CMOS SMD Type: XO (Standard) Frequency: 133.33MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 20mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.061" (1.55mm)	封装: 4-SMD, No Lead	库存3,168
ZTX1053ASTOA	Diodes Incorporated	TRANS NPN 75V 3A E-LINE Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 75V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1W Frequency - Transition: 140MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封装: E-Line-3, Formed Leads	库存6,752
FZT853TA	Diodes Incorporated	TRANS NPN 100V 6A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 3W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存155,016
DDTC143TCA-7	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存5,072
ZTX325STOA	Diodes Incorporated	TRANSISTOR RF NPN E-LINE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 5dB @ 500MHz Gain: 53dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封装: E-Line-3, Formed Leads	库存3,296
BCM857BS-7-F	Diodes Incorporated	TRANS 2PNP 45V 0.1A SOT36 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Power - Max: 200mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存25,998
DDZ9683Q-7	Diodes Incorporated	DIODE ZENER SOD123 Voltage - Zener (Nom) (Vz): 3V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 800nA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	封装: SOD-123	库存3,328
DDZ9694-7	Diodes Incorporated	DIODE ZENER 8.2V 500MW SOD123 Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 100nA @ 6.2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	封装: SOD-123	库存5,552
MMBZ5233BW-7-F	Diodes Incorporated	DIODE ZENER 6V 200MW SOT323 Voltage - Zener (Nom) (Vz): 6V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 5µA @ 3.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封装: SC-70, SOT-323	库存4,432
BZX84B33-7-F	Diodes Incorporated	DIODE ZENER 33V 300MW SOT23 Voltage - Zener (Nom) (Vz): 33V Tolerance: ±2% Power - Max: 300mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100nA @ 23.1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存4,784
SB390-T	Diodes Incorporated	DIODE SCHOTTKY 90V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AD, Axial	库存3,392
S3BB-13-F	Diodes Incorporated	DIODE GEN PURP 100V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存853,920
ES2B-13-F	Diodes Incorporated	DIODE GEN PURP 100V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存984,000
1N4448HLP-7	Diodes Incorporated	DIODE GEN PURP 80V 125MA 2DFN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C	封装: 2-UFDFN	库存813,744
GBJ2006	Diodes Incorporated	RECT BRIDGE GPP 600V 20A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	封装: 4-SIP, GBJ	库存21,192
AP130-35YL-13	Diodes Incorporated	IC REG LINEAR 3.5V 300MA SOT89-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 100µA PSRR: 58dB (100Hz) Control Features: - Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封装: TO-243AA	库存126,720
AP9101CAK6-BTTRG1	Diodes Incorporated	MULTICELL BATT MANAGER SOT26 Function: - Battery Chemistry: - Number of Cells: - Fault Protection: - Interface: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存6,576
PI3PCIE3242ZLEX	Diodes Incorporated	IC MUX/DEMUX 2:2 30TQFN Applications: USB Multiplexer/Demultiplexer Circuit: 2:2 Switch Circuit: DPDT Number of Channels: 4 On-State Resistance (Max): - Voltage - Supply, Single (V+): 3 V ~ 3.6 V Voltage - Supply, Dual (V±): - -3db Bandwidth: 6.5GHz Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 30-WFQFN Exposed Pad Supplier Device Package: 30-TQFN (2.5x4.5)	封装: 30-WFQFN Exposed Pad	库存5,184
PI3USB102GZLEX	Diodes Incorporated	IC USB 2.0 SWITCH 2:1 10TQFN Applications: USB Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: - Number of Channels: 1 On-State Resistance (Max): 5 Ohm Voltage - Supply, Single (V+): 3 V ~ 5.5 V Voltage - Supply, Dual (V±): - -3db Bandwidth: 1GHz Features: Bi-Directional, USB 2.0 Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-WFQFN Supplier Device Package: 10-TQFN (1.3x1.6)	封装: 10-WFQFN	库存26,796
SMCJ64CA-13-F	Diodes Incorporated	TVS DIODE 64VWM 103VC SMC Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64V Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 14.6A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC	封装: DO-214AB, SMC	库存54,888
DMN10H220LFVW-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	封装: -	Request a Quote
DMP4009SSSQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SO-8 T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote
BZT52C16Q-7-F	Diodes Incorporated	ZENER DIODE SOD123 T&R 3K Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±5.63% Power - Max: 370 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 11.2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	封装: -	库存9,000
DMC2991UDJ-7B	Diodes Incorporated	MOSFET N/P-CH 20V 0.5A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Power - Max: 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: -	库存26,697
BCP5616QTC	Diodes Incorporated	PWR MID PERF TRANSISTOR SOT223 T Transistor Type: NPN Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2 W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	封装: -	库存23,370
DMP58D1LV-13	Diodes Incorporated	MOSFET 2P-CH 50V 0.22A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存29,934
DMP4016SSS-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V SO-8 T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote
KBJ2008G-TU	Diodes Incorporated	Medium/High Power Bridge KBJ TUB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	封装: -	Request a Quote

FK1200010

Diodes Incorporated

OSCILLATOR XO 12.000MHZ CMOS SMD

Type: XO (Standard)
Frequency: 12MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 10mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.045" (1.15mm)

封装: 4-SMD, No Lead

库存4,680

FD2500054

Diodes Incorporated

OSCILLATOR XO 25.000MHZ CMOS SMD

Type: XO (Standard)
Frequency: 25MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Current - Supply (Max): 15mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Height - Seated (Max): 0.051" (1.30mm)

封装: 4-SMD, No Lead

库存8,802

FNDDR1133

Diodes Incorporated

OSCILLATOR XO 133.33MHZ CMOS SMD

Type: XO (Standard)
Frequency: 133.33MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 20mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.061" (1.55mm)

封装: 4-SMD, No Lead

库存3,168

ZTX1053ASTOA

Diodes Incorporated

TRANS NPN 75V 3A E-LINE

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 75V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100mA, 3A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 1W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封装: E-Line-3, Formed Leads

库存6,752

FZT853TA

Diodes Incorporated

TRANS NPN 100V 6A SOT-223

Transistor Type: NPN
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 3W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存155,016

DDTC143TCA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存5,072

ZTX325STOA

Diodes Incorporated

TRANSISTOR RF NPN E-LINE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 5dB @ 500MHz
Gain: 53dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封装: E-Line-3, Formed Leads

库存3,296

BCM857BS-7-F

Diodes Incorporated

TRANS 2PNP 45V 0.1A SOT36

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 200mW
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存25,998

DDZ9683Q-7

Diodes Incorporated

DIODE ZENER SOD123

Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): -
Current - Reverse Leakage @ Vr: 800nA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

封装: SOD-123

库存3,328

DDZ9694-7

Diodes Incorporated

DIODE ZENER 8.2V 500MW SOD123

Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): -
Current - Reverse Leakage @ Vr: 100nA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

封装: SOD-123

库存5,552

MMBZ5233BW-7-F

Diodes Incorporated

DIODE ZENER 6V 200MW SOT323

Voltage - Zener (Nom) (Vz): 6V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封装: SC-70, SOT-323

库存4,432

BZX84B33-7-F

Diodes Incorporated

DIODE ZENER 33V 300MW SOT23

Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±2%
Power - Max: 300mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 23.1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存4,784

SB390-T

Diodes Incorporated

DIODE SCHOTTKY 90V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

库存3,392

S3BB-13-F

Diodes Incorporated

DIODE GEN PURP 100V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存853,920

ES2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存984,000

1N4448HLP-7

Diodes Incorporated

DIODE GEN PURP 80V 125MA 2DFN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 80V
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-UFDFN
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C

封装: 2-UFDFN

库存813,744

GBJ2006

Diodes Incorporated

RECT BRIDGE GPP 600V 20A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

封装: 4-SIP, GBJ

库存21,192

AP130-35YL-13

Diodes Incorporated

IC REG LINEAR 3.5V 300MA SOT89-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 100µA
PSRR: 58dB (100Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封装: TO-243AA

库存126,720

AP9101CAK6-BTTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT26

Function: -
Battery Chemistry: -
Number of Cells: -
Fault Protection: -
Interface: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,576

PI3PCIE3242ZLEX

Diodes Incorporated

IC MUX/DEMUX 2:2 30TQFN

Applications: USB
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Number of Channels: 4
On-State Resistance (Max): -
Voltage - Supply, Single (V+): 3 V ~ 3.6 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 6.5GHz
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 30-WFQFN Exposed Pad
Supplier Device Package: 30-TQFN (2.5x4.5)

封装: 30-WFQFN Exposed Pad

库存5,184

PI3USB102GZLEX

Diodes Incorporated

IC USB 2.0 SWITCH 2:1 10TQFN

Applications: USB
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: -
Number of Channels: 1
On-State Resistance (Max): 5 Ohm
Voltage - Supply, Single (V+): 3 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 1GHz
Features: Bi-Directional, USB 2.0
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-WFQFN
Supplier Device Package: 10-TQFN (1.3x1.6)

封装: 10-WFQFN

库存26,796

SMCJ64CA-13-F

Diodes Incorporated

TVS DIODE 64VWM 103VC SMC

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 14.6A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC

封装: DO-214AB, SMC

库存54,888

DMN10H220LFVW-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Package / Case: 8-PowerVDFN

封装: -

Request a Quote

DMP4009SSSQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

Request a Quote

BZT52C16Q-7-F

Diodes Incorporated

ZENER DIODE SOD123 T&R 3K

Voltage - Zener (Nom) (Vz): 16 V
Tolerance: ±5.63%
Power - Max: 370 mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 11.2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

封装: -

库存9,000

DMC2991UDJ-7B

Diodes Incorporated

MOSFET N/P-CH 20V 0.5A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Power - Max: 380mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: -

库存26,697

BCP5616QTC

Diodes Incorporated

PWR MID PERF TRANSISTOR SOT223 T

Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2 W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

封装: -

库存23,370

DMP58D1LV-13

Diodes Incorporated

MOSFET 2P-CH 50V 0.22A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存29,934

DMP4016SSS-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

Request a Quote

KBJ2008G-TU

Diodes Incorporated

Medium/High Power Bridge KBJ TUB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ

封装: -

Request a Quote