Diodes Incorporated 产品

NX5041D0100.000000

Diodes Incorporated

OSCILLATOR XO 100MHZ HCSL SMD

• Type: XO (Standard)
• Frequency: 100MHz
• Function: Enable/Disable
• Output: HCSL
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 70mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.053" (1.35mm)

封装: 6-SMD, No Lead

ZVN4306AVSTOB

Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 850mW (Ta)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

封装: E-Line-3

ZVN4424ASTZ

Diodes Incorporated

MOSFET N-CH 240V 0.26A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Vgs (Max): ±40V
• FET Feature: -
• Power Dissipation (Max): 750mW (Ta)
• Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

封装: E-Line-3

DMP6185SE-7

Diodes Incorporated

MOSFET PCH 60V 3A SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

BCX5110TA

Diodes Incorporated

TRANS PNP 45V 1A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

封装: TO-243AA

DJT4031N-13

Diodes Incorporated

TRANS NPN 40V 3A SOT-223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
• Power - Max: 1.2W
• Frequency - Transition: 105MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

DDTA114GUA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: SC-70, SOT-323

MMSZ5242BS-7

Diodes Incorporated

DIODE ZENER 12V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

封装: SC-76, SOD-323

BZT52HC3V9WF-7

Diodes Incorporated

DIODE ZENER 3.9V 375MW SOD123F

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5.13%
• Power - Max: 375mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

封装: SOD-123F

SBG1025L-T

Diodes Incorporated

DIODE SCHOTTKY 25V 10A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 25V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 25V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)
• Operating Temperature - Junction: -65°C ~ 125°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RS1MDFQ-13

Diodes Incorporated

DIODE GEN PURP 1KV 1A DFLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: D-Flat
• Operating Temperature - Junction: -55°C ~ 150°C

封装: 2-SMD, Flat Lead

AP1509-12SL-13

Diodes Incorporated

IC REG BUCK 12V 2A 8SOIC

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 22V
• Voltage - Output (Min/Fixed): 12V
• Voltage - Output (Max): -
• Current - Output: 2A
• Frequency - Switching: 150kHz
• Synchronous Rectifier: No
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

AZ809ANRTR-G1

Diodes Incorporated

IC RESET GENERATOR

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 140 ms Minimum
• Voltage - Threshold: 2.63V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

PT8A3254WEX

Diodes Incorporated

HEATER CONTROLLER SO-16

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

AP2802NTR-G1

Diodes Incorporated

IC USB POWER SWITCH

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

AP9101CAK6-ACTRG1

Diodes Incorporated

IC BATT PROT LI-ION 1-CELL SOT26

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

封装: SOT-23-6

74LVC1G126FW4-7

Diodes Incorporated

IC BUFF/DVR 3ST 1BIT DFN1010-6

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: X2-DFN1010-6

封装: 6-XFDFN

PI3USB10MZEE+DMX

Diodes Incorporated

IC USB SWITCH DUAL 2X1 12TDFN

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 6.5 Ohm
• Voltage - Supply, Single (V+): 2.7 V ~ 5 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 700MHz
• Features: Bi-Directional, USB 2.0
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

封装: -

PI6C4911504-01LIEX

Diodes Incorporated

LVPECL BUFFER

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

SMBJ28A-13

Diodes Incorporated

TVS DIODE 28VWM 45.4VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.4V
• Current - Peak Pulse (10/1000µs): 13.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

封装: DO-214AA, SMB

AH3766Q-P-A

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 14mT Trip, -14mT Release
• Test Condition: -40°C ~ 150°C
• Voltage - Supply: 3 V ~ 28 V
• Current - Supply (Max): 4mA
• Current - Output (Max): 60mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: 3-SIP Module
• Supplier Device Package: 3-SIP

封装: 3-SIP Module

ZLPM3315Q16TC

Diodes Incorporated

IC PWR MNGMT QUAD O/O LMB 16QSOP

• Function: Power Management
• Frequency: -
• RF Type: LNBs, PMR
• Secondary Attributes: -
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

封装: 16-SSOP (0.154", 3.90mm Width)

AP9101CK-BZTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

• Function: Battery Protection
• Battery Chemistry: Lithium Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

封装: SC-74A, SOT-753

PT7A7631S-13

Diodes Incorporated

RESET GENERATOR SO-8

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High/Active Low
• Reset Timeout: 140ms Minimum
• Voltage - Threshold: 4.63V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BAS521Q-13

Diodes Incorporated

DIODE GEN PURP 300V 250MA SOD523

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 150 nA @ 250 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

DMPH4029LFG-7

Diodes Incorporated

MOSFET P-CH 40V 8A/22A PWRDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta)
• Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

封装: -

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PI3EQX2034ZLEX

Diodes Incorporated

USB3 EQX W-QFN3590-52 T&R 3.5K

• Type: -
• Applications: -
• Input: -
• Output: -
• Data Rate (Max): -
• Number of Channels: -
• Delay Time: -
• Signal Conditioning: -
• Capacitance - Input: -
• Voltage - Supply: -
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 52-WFQFN Exposed Pad
• Supplier Device Package: 52-TQFN (3.5x9)

封装: -

DMMT32N45CV-7R

Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT56

• Transistor Type: 2 NPN (Matched Pair)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 265mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

封装: -

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BZT52C12TQ-7-F

Diodes Incorporated

DIODE ZENER 12V 300MW SOD523

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±5.4%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

封装: -

DSS3540MQ-7B

Diodes Incorporated

SS Low Sat Transistor X1-DFN1006

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
• Power - Max: 400 mW
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-UFDFN
• Supplier Device Package: X1-DFN1006-3

封装: -