Diodes Incorporated 产品

DMN6013LFG-13

Diodes Incorporated

MOSFET N-CH 60V 10.3A PWDI3333-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2577pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

ZXTP5401GTA

Diodes Incorporated

TRANS PNP 150V 0.6A SOT223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

FZT688BTA

Diodes Incorporated

TRANS NPN 12V 4A SOT223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 4A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 3A, 2V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

ZXT13N50DE6TA

Diodes Incorporated

TRANS NPN 50V 4A SOT23-6

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 180mV @ 400mA, 4A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 115MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

封装: SOT-23-6

MMDT4124-7-F

Diodes Incorporated

TRANS 2NPN 25V 0.2A SOT363

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

MMDT2222A-7-F

Diodes Incorporated

TRANS 2NPN 40V 0.6A SOT363

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

BZT52C33-13-F

Diodes Incorporated

DIODE ZENER 33V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±6%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 23.1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

DDZ16Q-7

Diodes Incorporated

DIODE ZENER 16V 310MW SOD123

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2.5%
• Power - Max: 310mW
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: SOD-123

ZC830BTA

Diodes Incorporated

DIODE VAR CAP 10PF 25V SOT23-3

• Capacitance @ Vr, F: 10.5pF @ 2V, 1MHz
• Capacitance Ratio: 6
• Capacitance Ratio Condition: C2/C20
• Voltage - Peak Reverse (Max): 25V
• Diode Type: Single
• Q @ Vr, F: 300 @ 3V, 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SB190-T

Diodes Incorporated

DIODE SCHOTTKY 90V 1A DO41

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 90V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-204AL, DO-41, Axial

DSR8A600

Diodes Incorporated

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: 7.7pF @ 100V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 150°C (Max)

封装: TO-220-2

DLLFSD01T-7

Diodes Incorporated

DIODE FS SW 80V 100MA SOD523

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 200nA @ 80V
• Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -65°C ~ 150°C

封装: SC-79, SOD-523

DFLS230-7

Diodes Incorporated

DIODE SCHOTTKY 30V 2A POWERDI123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: 75pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123
• Operating Temperature - Junction: -55°C ~ 125°C

封装: POWERDI?123

SBL6030PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V TO3P

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 30V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封装: TO-3P-3, SC-65-3

AP7315-31FS4-7B

Diodes Incorporated

IC REG LINEAR 3.1V 150MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 3.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.29V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA ~ 100µA
• PSRR: 75dB (1kHz)
• Control Features: -
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

封装: 4-XDFN Exposed Pad

APX810-44SAG-7

Diodes Incorporated

IC MPU RESET CIRC 4.38V SOT23-3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 140 ms Minimum
• Voltage - Threshold: 4.38V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

APX803L20-14SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 143 ms Minimum
• Voltage - Threshold: 1.4V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PT8A3216WEX

Diodes Incorporated

HEATER CONTROLLER SO-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

74LVCE1G07W5-7

Diodes Incorporated

IC BUFF/DVR OP/DRAIN 1IN SOT25

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Open Drain
• Current - Output High, Low: -, 32mA
• Voltage - Supply: 1.4 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

封装: SC-74A, SOT-753

PI6C4512WE

Diodes Incorporated

IC PLL CLOCK MULT 8-SOIC

• Type: PLL Clock Multiplier
• PLL: Yes
• Input: Clock, Crystal
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:2
• Differential - Input:Output: No/No
• Frequency - Max: 200MHz
• Divider/Multiplier: Yes/Yes
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

1.5KE160CA-B

Diodes Incorporated

TVS DIODE 136VWM 219VC DO201A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 136V
• Voltage - Breakdown (Min): 152V
• Voltage - Clamping (Max) @ Ipp: 219V
• Current - Peak Pulse (10/1000µs): 6.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

封装: DO-201AA, DO-27, Axial

AL5814MP-13

Diodes Incorporated

IC LED LINEAR DRIVER MSOP-8EP

• Type: Linear
• Topology: -
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 4.5V
• Voltage - Supply (Max): 60V
• Voltage - Output: 4V
• Current - Output / Channel: 15mA
• Frequency: -
• Dimming: PWM
• Applications: Lighting
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
• Supplier Device Package: 8-MSOP-EP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

DMP31D7LW-13

Diodes Incorporated

MOSFET BVDSS: 25V-30V SOT323

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 290mW (Ta)
• Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

封装: -

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DSC08A065D1-13

Diodes Incorporated

SILICON CARBIDE RECTIFIER TO252

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 230 µA @ 650 V
• Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (Type WX)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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DMNH4011SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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BAS21Q-7-F

Diodes Incorporated

DIODE GP 200V 200MA SOT23-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 100 nA @ 200 V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

SBR40U120CT-G

Diodes Incorporated

DIODE ARR SBR 120V 20A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 120 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

封装: -

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MMSZ5234BQ-7-F

Diodes Incorporated

ZENER DIODE SOD123 T&R 3K

• Voltage - Zener (Nom) (Vz): 6.2 V
• Tolerance: ±5%
• Power - Max: 370 mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

封装: -

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DMP3018SFV-7

Diodes Incorporated

MOSFET P-CH 30V 11A PWRDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8 (Type UX)
• Package / Case: 8-PowerVDFN

封装: -

ZTP25040DFHQTA

Diodes Incorporated

SS LOW SAT TRANSISTOR SOT23 T&R

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3 A
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 260mV @ 20mA, 1V
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
• Power - Max: 730 mW
• Frequency - Transition: 270MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: -

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