| 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 20V SOT23 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存3,328  | 
                        
                            
                         | 
                    
                
            
                
                    
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                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 5.8A SOT23 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存4,064  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 30V SOT23 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存106,596  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH DFN 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存3,952  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 18A 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
 - Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252, (D-Pak)
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
                                     
                                
                             
                         | 
                        封装: TO-252-3, DPak (2 Leads + Tab), SC-63  | 
                        库存4,496  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 150V 4.5A TO252 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 150V
 - Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 28A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.7V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 75V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 115W (Tc)
 - Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252, (D-Pak)
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
                                     
                                
                             
                         | 
                        封装: TO-252-3, DPak (2 Leads + Tab), SC-63  | 
                        库存4,112  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 30V 6.5A 8SOIC 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 3.1W (Ta)
 - Rds On (Max) @ Id, Vgs: 46 mOhm @ 6.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SO
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存2,928  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 18A TO251A 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
 - Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-251A
 - Package / Case: TO-251-3 Stub Leads, IPak
 
                                     
                                
                             
                         | 
                        封装: TO-251-3 Stub Leads, IPak  | 
                        库存7,680  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 20V 0.7A SC70-3 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 1.8V, 4.5V
 - Vgs(th) (Max) @ Id: 900mV @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
 - Vgs (Max): ±8V
 - FET Feature: -
 - Power Dissipation (Max): 350mW (Ta)
 - Rds On (Max) @ Id, Vgs: 470 mOhm @ 700mA, 4.5V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: SC-70-3
 - Package / Case: SC-70, SOT-323
 
                                     
                                
                             
                         | 
                        封装: SC-70, SOT-323  | 
                        库存1,544,856  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 650V 7A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 650V
 - Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 104W (Tc)
 - Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存2,400  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 150V 32A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 150V
 - Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.7V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 75V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
 - Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存5,056  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N CH 8V 8A DFN 2X2B 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 8V
 - Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 1.2V, 2.5V
 - Vgs(th) (Max) @ Id: 750mV @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 4V
 - Vgs (Max): ±5V
 - FET Feature: -
 - Power Dissipation (Max): 2.8W (Ta)
 - Rds On (Max) @ Id, Vgs: 11 mOhm @ 8A, 2.5V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 6-DFN-EP (2x2)
 - Package / Case: 6-UDFN Exposed Pad
 
                                     
                                
                             
                         | 
                        封装: 6-UDFN Exposed Pad  | 
                        库存4,816  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 10A 5DFB 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600V
 - Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 208W (Tc)
 - Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-262
 - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
 
                                     
                                
                             
                         | 
                        封装: TO-262-3 Long Leads, I2Pak, TO-262AA  | 
                        库存2,064  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 250V 2.2A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 250V
 - Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 14A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 2W (Ta), 83W (Tc)
 - Rds On (Max) @ Id, Vgs: 170 mOhm @ 10A, 10V
 - Operating Temperature: -50°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: 8-PowerSMD, Flat Leads  | 
                        库存7,392  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 40V 40A TO251A 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 40V
 - Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 20V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
 - Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-251A
 - Package / Case: TO-251-3 Stub Leads, IPak
 
                                     
                                
                             
                         | 
                        封装: TO-251-3 Stub Leads, IPak  | 
                        库存37,092  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 12V 20A 8DFN 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 12V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 1.8V, 4.5V
 - Vgs(th) (Max) @ Id: 900mV @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 6V
 - Vgs (Max): ±8V
 - FET Feature: -
 - Power Dissipation (Max): 5W (Ta)
 - Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (2x2)
 - Package / Case: 8-PowerWDFN
 
                                     
                                
                             
                         | 
                        封装: 8-PowerWDFN  | 
                        库存22,716  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 25A TO-252 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 21W (Tc)
 - Rds On (Max) @ Id, Vgs: 23 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252, (D-Pak)
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
                                     
                                
                             
                         | 
                        封装: TO-252-3, DPak (2 Leads + Tab), SC-63  | 
                        库存714,324  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 40V 20A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 40V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 20V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 1.9W (Ta), 41W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存10,440  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 30V 22A 8DFN 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 32A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.7V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 15V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
 - Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: 8-PowerSMD, Flat Leads  | 
                        库存4,896  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 20A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 30A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 3W (Ta), 23W (Tc)
 - Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (3x3)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: 8-PowerSMD, Flat Leads  | 
                        库存54,852  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC PFC CONTROLLER SOIC 
                                
                                    
                                    - Mode: -
 - Frequency - Switching: -
 - Current - Startup: -
 - Voltage - Supply: -
 - Operating Temperature: -
 - Mounting Type: -
 - Package / Case: -
 - Supplier Device Package: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存5,520  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC POWER DIST LOAD SW 8DFN 
                                
                                    
                                    - Switch Type: General Purpose
 - Number of Outputs: 1
 - Ratio - Input:Output: 1:1
 - Output Configuration: High Side
 - Output Type: P-Channel
 - Interface: On/Off
 - Voltage - Load: 1.8V ~ 5.5V
 - Voltage - Supply (Vcc/Vdd): Not Required
 - Current - Output (Max): 2.3A
 - Rds On (Typ): 75mOhm
 - Input Type: Non-Inverting
 - Features: Load Discharge, Slew Rate Controlled
 - Fault Protection: UVLO
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Package / Case: 8-WFDFN Exposed Pad
 - Supplier Device Package: 8-DFN-EP (2x2)
 
                                     
                                
                             
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                        封装: 8-WFDFN Exposed Pad  | 
                        库存2,832  | 
                        
                            
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 17A/50A TO252 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: 2.4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252 (DPAK)
 - Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
 
                                     
                                
                             
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                        封装: -  | 
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 85A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
 - Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 15 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 83W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerVDFN
 
                                     
                                
                             
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                        封装: -  | 
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC POWER DRMOS 25V 55A 31QFN 
                                
                                    
                                    - Output Configuration: Half Bridge
 - Applications: Synchronous Buck Converters
 - Interface: PWM
 - Load Type: Inductive, Capacitive
 - Technology: DrMOS
 - Rds On (Typ): -
 - Current - Output / Channel: 55A
 - Current - Peak Output: 120A
 - Voltage - Supply: 4.5V ~ 5.5V
 - Voltage - Load: 4.5V ~ 25V
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Features: Bootstrap Circuit, Diode Emulation, Status Flag
 - Fault Protection: Over Temperature, Shoot-Through, UVLO
 - Mounting Type: Surface Mount
 - Package / Case: 31-PowerVFQFN Module
 - Supplier Device Package: 31-QFN (5x5)
 
                                     
                                
                             
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                        封装: -  | 
                        库存35,739  | 
                        
                            
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC COIL DRIVER 18QFN 
                                
                                    
                                    - Type: Coil Driver
 - Applications: -
 - Mounting Type: Surface Mount
 - Package / Case: 18-PowerWFQFN
 - Supplier Device Package: 18-QFN (3x3)
 
                                     
                                
                             
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                        封装: -  | 
                        库存14,937  | 
                        
                            
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 60V 44.5A/120A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60 V
 - Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 8V, 10V
 - Vgs(th) (Max) @ Id: 3.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 8.3W (Ta), 260W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2PAK)
 - Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
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                        封装: -  | 
                        库存12,297  | 
                        
                            
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC PWR SWITCH P-CHAN 1:1 SOT23-6 
                                
                                    
                                    - Switch Type: General Purpose
 - Number of Outputs: 1
 - Ratio - Input:Output: 1:1
 - Output Configuration: High Side
 - Output Type: P-Channel
 - Interface: On/Off
 - Voltage - Load: 1.8V ~ 5.5V
 - Voltage - Supply (Vcc/Vdd): Not Required
 - Current - Output (Max): 1.6A
 - Rds On (Typ): 75mOhm
 - Input Type: Non-Inverting
 - Features: Load Discharge, Slew Rate Controlled
 - Fault Protection: UVLO
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Package / Case: SOT-23-6
 - Supplier Device Package: SOT-23-6
 
                                     
                                
                             
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                        封装: -  | 
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                N 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 6360 pF @ 15 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 56W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN-EP (3.3x3.3)
 - Package / Case: 8-PowerWDFN
 
                                     
                                
                             
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                        封装: -  | 
                        库存8,850  | 
                        
                            
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IPM5 
                                
                                    
                                    - Type: IGBT
 - Configuration: 3 Phase Inverter
 - Current: 10 A
 - Voltage: 600 V
 - Voltage - Isolation: 2000Vrms
 - Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
 
                                     
                                
                             
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                        封装: -  | 
                        Request a Quote  | 
                        
                            
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