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Vishay Siliconix |
MOSFET P-CH 40V 7.4A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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封装: SOT-23-6 Thin, TSOT-23-6 |
库存600,600 |
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Vishay Siliconix |
MOSFET N-CH 150V 90A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4180pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存8,928 |
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Vishay Siliconix |
MOSFET N-CH 30V 44.5A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 12.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (U)
- Package / Case: 10-PolarPAK? (U)
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封装: 10-PolarPAK? (U) |
库存4,544 |
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Vishay Siliconix |
MOSFET N-CH 50V 1.7A 4-DIP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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封装: 4-DIP (0.300", 7.62mm) |
库存4,032 |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存6,912 |
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Vishay Siliconix |
MOSFET N-CH 20V 36A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存6,848 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,072 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,456 |
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Vishay Siliconix |
MOSFET N-CH 30V 63A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 65.2W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存62,988 |
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Vishay Siliconix |
MOSFET N-CH 250V 24.2A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 7.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 125V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 63 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存4,656 |
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Vishay Siliconix |
MOSFET N-CH 200V 20.2A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 7.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 50.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存4,496 |
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Vishay Siliconix |
MOSFET N-CH 80V 60A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存5,120 |
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Vishay Siliconix |
MOSFET P-CH 40V 46A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存6,144 |
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Vishay Siliconix |
MOSFET P-CH 30V 8.8A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存743,832 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 177 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存3,632 |
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Vishay Siliconix |
MOSFET N-CH 30V 6A 1206-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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封装: 8-SMD, Flat Lead |
库存2,064 |
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Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存3,824,988 |
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Vishay Siliconix |
MOSFET N-CH 600V 20A POWERPAK8X8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 8 x 8
- Package / Case: 8-PowerTDFN
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封装: 8-PowerTDFN |
库存23,226 |
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Vishay Siliconix |
MOSFET N-CH 30V 3.16A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存764,736 |
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Vishay Siliconix |
MOSFET 2P-CH 20V 1.3A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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封装: 6-TSSOP, SC-88, SOT-363 |
库存364,476 |
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Vishay Siliconix |
MOSFET 2N-CH 20V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,409,876 |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 60V SO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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封装: PowerPAK? SO-8 Dual |
库存3,536 |
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Vishay Siliconix |
IC CTRLR PWM PIN PROG 28SSOP
- Applications: Controller, Power Supplies
- Voltage - Input: 5.5 V ~ 30 V
- Number of Outputs: 3
- Voltage - Output: 3.3V, 5V, 12V
- Operating Temperature: 0°C ~ 90°C
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
|
封装: 28-SSOP (0.209", 5.30mm Width) |
库存6,224 |
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Vishay Siliconix |
IC REG DL BCK/LINEAR SYNC 28MLPQ
- Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
- Function: Any Function
- Number of Outputs: 2
- Frequency - Switching: 200kHz ~ 1MHz
- Voltage/Current - Output 1: 0.75 V ~ 5.5 V, 6A
- Voltage/Current - Output 2: 5V, 200mA
- Voltage/Current - Output 3: -
- w/LED Driver: No
- w/Supervisor: No
- w/Sequencer: No
- Voltage - Supply: 3 V ~ 28 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 28-WFQFN Exposed Pad
- Supplier Device Package: 28-MLPQ (4x4)
|
封装: 28-WFQFN Exposed Pad |
库存64,200 |
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Vishay Siliconix |
IC CTLR PFC STAGE PPAK MLP66-40
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: DrMOS
- Rds On (Typ): 1.7 mOhm LS, 6 mOhm HS
- Current - Output / Channel: 35A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 3 V ~ 16 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit, Diode Emulation, Status Flag
- Fault Protection: Over Temperature, Shoot-Through, UVLO
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? MLP66-40
- Supplier Device Package: PowerPAK? MLP66-40
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封装: PowerPAK? MLP66-40 |
库存67,044 |
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Vishay Siliconix |
MOSFET
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: -
- Number of Circuits: -
- On-State Resistance (Max): -
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): -
- Current - Leakage (IS(off)) (Max): -
- Crosstalk: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存7,808 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16DIP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm (Max)
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 250ns, 120ns
- -3db Bandwidth: -
- Charge Injection: -1pC
- Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -100dB @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
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封装: 16-CDIP (0.300", 7.62mm) |
库存14,724 |
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Vishay Siliconix |
IC MUX LV 8CH DUAL 4CH 16MICRO
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 7 Ohm
- Channel-to-Channel Matching (ΔRon): 3.6 Ohm (Max)
- Voltage - Supply, Single (V+): 2.7 V ~ 12 V
- Voltage - Supply, Dual (V±): ±3 V ~ 6 V
- Switch Time (Ton, Toff) (Max): 70ns, 44ns
- -3db Bandwidth: -
- Charge Injection: 29pC
- Channel Capacitance (CS(off), CD(off)): 21pF, 211pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -85dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-WFBGA
- Supplier Device Package: 16-Micro Foot?
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封装: 16-WFBGA |
库存6,400 |
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Vishay Siliconix |
IC SWITCH QUAD CMOS 16TSSOP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 85 Ohm
- Channel-to-Channel Matching (ΔRon): 2 Ohm
- Voltage - Supply, Single (V+): 4.5 V ~ 25 V
- Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
- Switch Time (Ton, Toff) (Max): 300ns, 200ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存2,128 |
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Vishay Siliconix |
IC SWITCH LV DUAL SPST 10DFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 500 mOhm
- Channel-to-Channel Matching (ΔRon): 50 mOhm (Max)
- Voltage - Supply, Single (V+): 3V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 82ns, 73ns
- -3db Bandwidth: -
- Charge Injection: 21pC
- Channel Capacitance (CS(off), CD(off)): 145pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -69dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-VFDFN Exposed Pad
- Supplier Device Package: 10-DFN (3x3)
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封装: 10-VFDFN Exposed Pad |
库存3,168 |
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