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Vishay Siliconix |
MOSFET N-CH 60V 0.99A TO-205
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AD, TO-39-3 Metal Can
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封装: TO-205AD, TO-39-3 Metal Can |
库存3,472 |
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Vishay Siliconix |
MOSFET P-CH 30V 2.7A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.14W (Ta)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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封装: SOT-23-6 Thin, TSOT-23-6 |
库存192,012 |
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Vishay Siliconix |
MOSFET P-CH 30V 5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存51,900 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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封装: TO-261-4, TO-261AA |
库存4,784 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存31,752 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,360 |
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Vishay Siliconix |
MOSFET N-CH 250V 4.4A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,576 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存814,548 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,992 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存15,000 |
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Vishay Siliconix |
MOSFET N-CH 40V 90A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存13,704 |
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Vishay Siliconix |
MOSFET N-CH 12V 20A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 29A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存726,012 |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存29,100 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.4A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存404,400 |
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Vishay Siliconix |
MOSFET P-CH 40V 110A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存101,328 |
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Vishay Siliconix |
MOSFET 2N-CH 190V 0.95A SC-70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 190V
- Current - Continuous Drain (Id) @ 25°C: 950mA
- Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
- Power - Max: 7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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封装: PowerPAK? SC-70-6 Dual |
库存3,040 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 7.6A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.6A
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,224 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
- Power - Max: 3.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,260 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 15A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V
- Power - Max: 48W, 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric
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封装: PowerPAK? SO-8 Dual |
库存6,624 |
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Vishay Siliconix |
IC REG LIN 2.85V 150MA TSOT23-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 2.85V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.22V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 900µA
- PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
- Control Features: Enable
- Protection Features: Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSOT-23-5
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封装: SOT-23-5 Thin, TSOT-23-5 |
库存72,000 |
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Vishay Siliconix |
IC SWITCH LV DUAL SPST 16MINIQFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 4
- On-State Resistance (Max): 500 mOhm
- Channel-to-Channel Matching (ΔRon): 50 mOhm
- Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 72ns, 43ns
- -3db Bandwidth: -
- Charge Injection: 87pC
- Channel Capacitance (CS(off), CD(off)): 81pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -96dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-WFQFN
- Supplier Device Package: 16-miniQFN (1.8x2.6)
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封装: 16-WFQFN |
库存5,568 |
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Vishay Siliconix |
IC SWITCH TRIPLE SPDT 16QFN
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 3
- On-State Resistance (Max): 1.2 Ohm
- Channel-to-Channel Matching (ΔRon): 600 mOhm (Max)
- Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 60ns, 30ns
- -3db Bandwidth: -
- Charge Injection: -25pC
- Channel Capacitance (CS(off), CD(off)): 35pF
- Current - Leakage (IS(off)) (Max): 2nA
- Crosstalk: -90dB @ 10MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
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封装: 16-VFQFN Exposed Pad |
库存4,400 |
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Vishay Siliconix |
IC MUX CMOS ANLG DUAL 8CH 28PLCC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 2
- On-State Resistance (Max): 60 Ohm
- Channel-to-Channel Matching (ΔRon): 3 Ohm
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 107ns, 88ns
- -3db Bandwidth: -
- Charge Injection: 11pC
- Channel Capacitance (CS(off), CD(off)): 6pF, 54pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 28-LCC (J-Lead)
- Supplier Device Package: 28-PLCC (11.51x11.51)
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封装: 28-LCC (J-Lead) |
库存5,808 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT 16SOIC
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 100ns
- -3db Bandwidth: -
- Charge Injection: 60pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -94.8dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存5,872 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16SOIC
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 80 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 300ns, 200ns
- -3db Bandwidth: -
- Charge Injection: 1pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -95dB @ 100kHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存6,896 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16-TSSOP
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 26 Ohm
- Channel-to-Channel Matching (ΔRon): 100 mOhm
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 60ns, 35ns
- -3db Bandwidth: -
- Charge Injection: 6.6pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -114dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存7,328 |
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Vishay Siliconix |
IC MUX ANALOG SINGLE 8CH 16QFN
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 380 Ohm
- Channel-to-Channel Matching (ΔRon): 10 Ohm
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 250ns, 240ns
- -3db Bandwidth: 250MHz
- Charge Injection: 2pC
- Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -88dB @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-WFQFN
- Supplier Device Package: 16-miniQFN (1.8x2.6)
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封装: 16-WFQFN |
库存3,248 |
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Vishay Siliconix |
IC SWITCH DPDT 8 OHM 10MINIQFN
- Switch Circuit: DPDT
- Multiplexer/Demultiplexer Circuit: 2:2
- Number of Circuits: 1
- On-State Resistance (Max): 8 Ohm
- Channel-to-Channel Matching (ΔRon): 800 mOhm
- Voltage - Supply, Single (V+): 2.6 V ~ 4.3 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 30ns, 25ns
- -3db Bandwidth: 900MHz
- Charge Injection: 0.5pC
- Channel Capacitance (CS(off), CD(off)): 2.2pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -45dB @ 240MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 10-UFQFN
- Supplier Device Package: 10-miniQFN (1.4x1.8)
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封装: 10-UFQFN |
库存225,960 |
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Vishay Siliconix |
IC MUX TRIPLE 2CHAN 16-SOIC
- Switch Circuit: SPDT
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 3
- On-State Resistance (Max): 78 Ohm
- Channel-to-Channel Matching (ΔRon): 910 mOhm
- Voltage - Supply, Single (V+): 3 V ~ 16 V
- Voltage - Supply, Dual (V±): ±3 V ~ 8 V
- Switch Time (Ton, Toff) (Max): 75ns, 88ns
- -3db Bandwidth: 930MHz
- Charge Injection: 0.3pC
- Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -105dB @ 100kHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存2,336 |
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Vishay Siliconix |
QUAD CHANNEL, HIGH FREQUENCY POW
- Output Configuration: Half Bridge
- Applications: Synchronous Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): 350 mOhm LS, 550 mOhm HS
- Current - Output / Channel: 500mA
- Current - Peak Output: 2A
- Voltage - Supply: 10 V ~ 24 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 125°C (TA)
- Features: -
- Fault Protection: -
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-QFN (5x5)
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封装: 32-VFQFN Exposed Pad |
库存2,128 |
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