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Vishay Siliconix |
JFET P-CH 30V TO-18
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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封装: TO-206AA, TO-18-3 Metal Can |
库存4,352 |
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Vishay Siliconix |
MOSFET N-CH 20V 400MA SOT323-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.84nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 190mW (Ta), 200mW (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3
- Package / Case: SC-70, SOT-323
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封装: SC-70, SOT-323 |
库存191,880 |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存15,432 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.5A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,808 |
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Vishay Siliconix |
MOSFET P-CH 100V 12A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,888 |
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A I-PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存38,220 |
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Vishay Siliconix |
MOSFET N-CH 100V 47A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,960 |
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Vishay Siliconix |
MOSFET N-CH 20V 4.5A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
- Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Dual
- Package / Case: PowerPAK? SC-70-6 Dual
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封装: PowerPAK? SC-70-6 Dual |
库存5,584 |
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Vishay Siliconix |
MOSFET P-CH 30V 2.7A SC-70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
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封装: 6-TSSOP, SC-88, SOT-363 |
库存1,322,412 |
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Vishay Siliconix |
MOSFET N-CH 150V 40A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存127,944 |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存196,176 |
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Vishay Siliconix |
MOSFET N-CH 30V 8.9A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存1,702,092 |
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Vishay Siliconix |
MOSFET N-CH 60V 57A SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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封装: PowerPAK? SO-8 |
库存22,326 |
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Vishay Siliconix |
MOSFET N-CH 150V 85A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 300W (Tc)
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存49,752 |
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Vishay Siliconix |
MOSFET N-CH 500V 8A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存15,768 |
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Vishay Siliconix |
MOSFET P-CH 100V 4A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存4,720 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 11A POWERPAIR
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A, 28A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 16.7W, 31W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair?
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封装: 8-PowerWDFN |
库存15,360 |
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Vishay Siliconix |
MOSFET 2P-CH 12V 6.7A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.7A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存246,120 |
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Vishay Siliconix |
LOAD SW W/CONTROLLED SLEW RATE
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.8 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.4A
- Rds On (Typ): 105 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: PowerPAK? SC-75-6L
- Supplier Device Package: PowerPAK? SC-75-6L Single
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封装: PowerPAK? SC-75-6L |
库存1,331,628 |
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Vishay Siliconix |
IC LOAD SWITCH SOT23-6
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 1.2 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3A
- Rds On (Typ): 46 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: Reverse Current
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-23-6
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封装: SOT-23-6 Thin, TSOT-23-6 |
库存25,752 |
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Vishay Siliconix |
IC SCSI 14-LINE TERM SQFP
- Type: SCSI
- Number of Terminations: 15
- Voltage - Supply: 2.7 V ~ 5.25 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存5,104 |
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Vishay Siliconix |
IC SINGLE-ENDED BUS TXRX 8SOIC
- Type: Transceiver
- Protocol: ISO 9141
- Number of Drivers/Receivers: 1/2
- Duplex: Half
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存35,100 |
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Vishay Siliconix |
IC MULTIPLEXER 8X1 18DIP
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 400 Ohm
- Channel-to-Channel Matching (ΔRon): 24 Ohm
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 1.5µs, 1µs
- -3db Bandwidth: -
- Charge Injection: 4pC
- Channel Capacitance (CS(off), CD(off)): 5pF, 25pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 18-CDIP (0.300", 7.62mm)
- Supplier Device Package: 18-CERDIP
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封装: 18-CDIP (0.300", 7.62mm) |
库存4,064 |
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Vishay Siliconix |
IC MUX ANALOG SINGLE 8CH 16DIP
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 1.5 kOhm
- Channel-to-Channel Matching (ΔRon): 90 Ohm
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±4.5 V ~ 18 V
- Switch Time (Ton, Toff) (Max): 250ns, 250ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 5pF, 15pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
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封装: 16-CDIP (0.300", 7.62mm) |
库存6,816 |
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Vishay Siliconix |
IC SWITCH DUAL SPST 14CDIP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 50 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 250ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 30pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
- Current - Leakage (IS(off)) (Max): 1nA
- Crosstalk: -74dB @ 500kHz
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: 14-CDIP (0.300", 7.62mm)
- Supplier Device Package: 14-CERDIP
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封装: 14-CDIP (0.300", 7.62mm) |
库存5,152 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT 16DIP
- Switch Circuit: DPST - NO
- Multiplexer/Demultiplexer Circuit: 2:1
- Number of Circuits: 2
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 100ns
- -3db Bandwidth: -
- Charge Injection: 60pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -90dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
|
封装: 16-DIP (0.300", 7.62mm) |
库存18,540 |
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Vishay Siliconix |
IC ANALOG SWITCH SPDT 16DIP
- Switch Circuit: SPST - NO/NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 45 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): -
- Voltage - Supply, Dual (V±): ±15V
- Switch Time (Ton, Toff) (Max): 150ns, 100ns
- -3db Bandwidth: -
- Charge Injection: 10pC
- Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -90dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-PDIP
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封装: 16-DIP (0.300", 7.62mm) |
库存6,948 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16TSSOP
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 4
- On-State Resistance (Max): 5.3 Ohm
- Channel-to-Channel Matching (ΔRon): 120 mOhm
- Voltage - Supply, Single (V+): 12V
- Voltage - Supply, Dual (V±): ±5 V ~ 15 V
- Switch Time (Ton, Toff) (Max): 118ns, 97ns
- -3db Bandwidth: -
- Charge Injection: 22pC
- Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -85dB @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存2,256 |
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Vishay Siliconix |
IC MUX CMOS ANG DUAL 8CH 16TSSOP
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 100 Ohm
- Channel-to-Channel Matching (ΔRon): 15 Ohm (Max)
- Voltage - Supply, Single (V+): 5 V ~ 36 V
- Voltage - Supply, Dual (V±): ±5 V ~ 20 V
- Switch Time (Ton, Toff) (Max): 150ns, 150ns
- -3db Bandwidth: -
- Charge Injection: 20pC
- Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
- Current - Leakage (IS(off)) (Max): 500pA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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封装: 16-TSSOP (0.173", 4.40mm Width) |
库存8,544 |
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Vishay Siliconix |
IC SWITCH QUAD SPST 16SOIC
- Applications: Video
- Multiplexer/Demultiplexer Circuit: 1:1
- Switch Circuit: SPST
- Number of Channels: 4
- On-State Resistance (Max): 60 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 15 V
- Voltage - Supply, Dual (V±): ±3 V ~ 15 V
- -3db Bandwidth: 500MHz
- Features: RGB, T-Switch Configuration
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.154", 3.90mm Width) |
库存5,424 |
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