页 473 - Vishay Semiconductor Diodes Division 产品 | 黑森尔电子
联系我们
SalesDept@heisener.com +86-755-83210559 ext. 807

Vishay Semiconductor Diodes Division 产品

记录 39,746
页  473/1,325
图片
零件编号
制造商
描述
封装
库存
数量
VS-GB75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 170A 658W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Power - Max: 658W
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
封装: INT-A-PAK (3 + 4)
库存5,712
VS-GA300TD60S
Vishay Semiconductor Diodes Division

IGBT 600V 530A 1136W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封装: Dual INT-A-PAK (3 + 8)
库存2,144
VS-ST303C12CFK0L
Vishay Semiconductor Diodes Division

SCR 1200V 1180A E-PUK

  • Voltage - Off State: 1200V
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 200mA
  • Voltage - On State (Vtm) (Max): 2.16V
  • Current - On State (It (AV)) (Max): 620A
  • Current - On State (It (RMS)) (Max): 1180A
  • Current - Hold (Ih) (Max): 600mA
  • Current - Off State (Max): 50mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 6690A, 7000A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AB, E-PUK
  • Supplier Device Package: TO-200AB (E-Puk)
封装: TO-200AB, E-PUK
库存2,016
VS-VSKV105/12
Vishay Semiconductor Diodes Division

MODULE THYRISTOR 105A ADD-A-PAK

  • Structure: Common Anode - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1200V
  • Current - On State (It (AV)) (Max): 105A
  • Current - On State (It (RMS)) (Max): 165A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2094A
  • Current - Hold (Ih) (Max): 250mA
  • Operating Temperature: -40°C ~ 130°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ADD-A-PAK (3 + 4)
封装: ADD-A-PAK (3 + 4)
库存4,384
BZT52C12-E3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 12V 410MW SOD123

  • Voltage - Zener (Nom) (Vz): 12V
  • Tolerance: ±5%
  • Power - Max: 410mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 9V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
封装: SOD-123
库存5,760
MMBZ4696-G3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 9.1V 350MW SOT23-3

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±5%
  • Power - Max: 350mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 1µA @ 6.9V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存4,144
BA479S-TR
Vishay Semiconductor Diodes Division

DIODE RF PIN 30V 50MA DO35

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 30V
  • Current - Max: 50mA
  • Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
  • Resistance @ If, F: 50 Ohm @ 1.5mA, 100MHz
  • Power Dissipation (Max): -
  • Operating Temperature: 125°C (TJ)
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
封装: DO-204AH, DO-35, Axial
库存3,376
EGP20CHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-204AC, DO-15, Axial
库存2,064
MBR10H100/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-220-2
库存2,112
hot MBRB1045
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存63,288
VS-305URA250
Vishay Semiconductor Diodes Division

DIODE STD REC 300A DO-9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 2500V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: DO-205AB, DO-9, Stud
库存2,272
VS-ETU3006STRL-M3
Vishay Semiconductor Diodes Division

DIODE ULTRAFAST 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,568
V20150S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 150V TO-220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-3
库存4,224
AS1PGHM3/84A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A DO220

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-220AA
库存4,336
SS23HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AA, SMB
库存3,360
ESH1DHE3_A/H
Vishay Semiconductor Diodes Division

DIODE UFAST 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-214AC, SMA
库存2,272
GL41YHE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1600V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-213AB, MELF (Glass)
库存3,104
BYM07-400-E3/83
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-213AA (Glass)
库存5,712
RMPG06DHE3_A/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: MPG06, Axial
库存6,224
VS-123NQ100PBF
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 100V
  • Capacitance @ Vr, F: 2650pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: D-67 HALF-PAK
库存3,632
MBRB15H50CTHE3/81
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-263AB

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,296
VS-42CTQ030-N3
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存22,020
hot BAW56-E3-08
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 70V 250MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 70V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存93,180
GBLA08-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 800V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封装: 4-SIP, GBL
库存3,424
TMPG06-11HE3/73
Vishay Semiconductor Diodes Division

TVS DIODE 8.92VWM 16.2VC AXIAL

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 8.92V
  • Voltage - Breakdown (Min): 9.9V
  • Voltage - Clamping (Max) @ Ipp: 16.2V
  • Current - Peak Pulse (10/1000µs): 24.7A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
封装: MPG06, Axial
库存2,862
1.5KA43AHE3/73
Vishay Semiconductor Diodes Division

TVS DIODE 36.8VWM 59.3VC 1.5KA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 36.8V
  • Voltage - Breakdown (Min): 40.9V
  • Voltage - Clamping (Max) @ Ipp: 59.3V
  • Current - Peak Pulse (10/1000µs): 25.3A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: 1.5KA
封装: DO-201AA, DO-27, Axial
库存6,714
TPSMB16HE3/52T
Vishay Semiconductor Diodes Division

TVS DIODE 12.9VWM 23.5VC SMB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 12.9V
  • Voltage - Breakdown (Min): 14.4V
  • Voltage - Clamping (Max) @ Ipp: 23.5V
  • Current - Peak Pulse (10/1000µs): 25.5A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMBJ)
封装: DO-214AA, SMB
库存5,022
1.5SMC43CAHE3/57T
Vishay Semiconductor Diodes Division

TVS DIODE 36.8VWM 59.3VC DO214AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 36.8V
  • Voltage - Breakdown (Min): 40.9V
  • Voltage - Clamping (Max) @ Ipp: 59.3V
  • Current - Peak Pulse (10/1000µs): 25.3A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
封装: DO-214AB, SMC
库存4,338
TPSMC7.5AHE3_B/H
Vishay Semiconductor Diodes Division

TVS DIODE 11.3VC 133A DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 6.4V
  • Voltage - Breakdown (Min): 7.13V
  • Voltage - Clamping (Max) @ Ipp: 11.3V
  • Current - Peak Pulse (10/1000µs): 133A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
封装: DO-214AB, SMC
库存4,068
SMF20A-M3-18
Vishay Semiconductor Diodes Division

TVS DIODE 20VWM 32.4VC DO-219AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 20V
  • Voltage - Breakdown (Min): 22.2V
  • Voltage - Clamping (Max) @ Ipp: 32.4V
  • Current - Peak Pulse (10/1000µs): 6.2A
  • Power - Peak Pulse: 200W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 283pF @ 1MHz
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: SMF (DO-219AB)
封装: DO-219AB
库存4,284