Micron Technology Inc. 产品

MT29F512G08EMCBBJ5-6:B.001

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

N25Q064A11EF640F TR

Micron Technology Inc.

IC FLASH NOR 16MX4 VFQFPN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (16M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29C1G12MAAIYAMD-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 130-VFBGA
• Supplier Device Package: 130-VFBGA (8x9)

封装: 130-VFBGA

MT41K256M16HA-125 M:E TR

Micron Technology Inc.

IC SDRAM 4GBIT 800MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (9x14)

封装: 96-TFBGA

MT48H32M16LFB4-75 IT:C

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

MT46H8M32LFB5-6 IT:A TR

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

M29F400BB90N6

Micron Technology Inc.

IC FLASH 4MBIT 90NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

M25P128-VMF6P

Micron Technology Inc.

IC FLASH 128MBIT 50MHZ 16SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 50MHz
• Write Cycle Time - Word, Page: 15ms, 7ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SO W

封装: 16-SOIC (0.295", 7.50mm Width)

MT46V8M16TG-75:D TR

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT46V8M16TG-75:D

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT46V32M16TG-5B:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT48LC4M16A2P-75 IT:G TR

Micron Technology Inc.

IC SDRAM 64MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

MT45W4MW16BBB-708 WT TR

Micron Technology Inc.

IC PSRAM 64MBIT 70NS 54VFBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (6x9)

封装: 54-VFBGA

MT49H32M18SJ-25:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 400MHZ 144FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (32M x 18)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FBGA (18.5x11)

封装: 144-TFBGA

MT41K1G8RKB-107:N TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 8Gb (1G x 8)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

MT29F32G08AFACAWP-ITZ:C TR

Micron Technology Inc.

IC FLASH 32GBIT TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

MT48LC4M32B2P-6A AAT:L

Micron Technology Inc.

IC SDRAM 128MBIT 166MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

MT25QU01GBBB1EW9-0SIT TR

Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 8WPDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 1Gb (128M x 8)
• Memory Interface: SPI
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WPDFN (6x8) (MLP8)

封装: 8-WDFN Exposed Pad

MT41K256M16V00HWC1

Micron Technology Inc.

IC FLASH NAND 32GX8 TSOP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

JS28F256P30BFE

Micron Technology Inc.

IC FLASH 256MBIT 110NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 40MHz
• Write Cycle Time - Word, Page: 110ns
• Access Time: 110ns
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

MT41J256M8DA-125:K TR

Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

MT46V16M16P-5B IT:M TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT29F2G16ABBFAH4:F

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PC28F064M29EWBA

Micron Technology Inc.

IC FLASH 64MBIT 60NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 60ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

MT25QL128ABA8E12-1SIT

Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 24TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

MT53B512M64D8HR-053 WT:B

Micron Technology Inc.

IC DRAM 32G 1866MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (512M x 64)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC32GAPALNA-AIT ES TR

Micron Technology Inc.

IC FLASH 256G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC64GAKAEYF-4M IT

Micron Technology Inc.

IC FLASH 512G MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 512Gb (64G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F4G08ABADAH4-AATX:D

Micron Technology Inc.

IC FLASH 4G PARALLEL FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT25QL256ABA8E12-0AAT

Micron Technology Inc.

IC FLASH 256M SPI 24TPBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: SPI
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 8ms, 2.8ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA