页 263 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
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存储器

记录 62,144
页  263/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot DS1220Y-120+
Maxim Integrated

IC SRAM 16K NONVOLATILE 24DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 120ns
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 24-DIP
封装: 24-DIP Module (0.600", 15.24mm)
库存15,900
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Kb (2K x 8)
Parallel
-
120ns
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
24-DIP Module (0.600", 15.24mm)
24-DIP
M58LT256KST8ZA6E
Micron Technology Inc.

IC FLASH 256MBIT 85NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 85ns
  • Access Time: 85ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
封装: 64-TBGA
库存3,792
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
52MHz
85ns
85ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
hot CY62128BNLL-55ZXI
Cypress Semiconductor Corp

IC SRAM 1MBIT 55NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
封装: 32-TFSOP (0.724", 18.40mm Width)
库存242,304
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
CY7C1514AV18-167BZXC
Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封装: 165-LBGA
库存4,656
SRAM
SRAM - Synchronous, QDR II
72Mb (2M x 36)
Parallel
167MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
MT29F4G08AACWC-ET:C TR
Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TSOP
  • Supplier Device Package: 48-TSOP
封装: 48-TSOP
库存7,888
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TSOP
48-TSOP
M29F040B70K6
Micron Technology Inc.

IC FLASH 4MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC (11.35x13.89)
封装: 32-LCC (J-Lead)
库存5,856
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC (11.35x13.89)
MT46V32M16TG-5B:F TR
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
封装: 66-TSSOP (0.400", 10.16mm Width)
库存5,328
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
200MHz
15ns
700ps
2.5 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
hot AT93C56A-10PU-2.7
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8, 128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封装: 8-DIP (0.300", 7.62mm)
库存69,744
EEPROM
EEPROM
2Kb (256 x 8, 128 x 16)
SPI
2MHz
10ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT28C64X-15PI
Microchip Technology

IC EEPROM 64KBIT 150NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-PDIP
封装: 28-DIP (0.600", 15.24mm)
库存5,568
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
1ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
28-DIP (0.600", 15.24mm)
28-PDIP
AT28C17E-15JC
Microchip Technology

IC EEPROM 16KBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200µs
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封装: 32-LCC (J-Lead)
库存4,144
EEPROM
EEPROM
16Kb (2K x 8)
Parallel
-
200µs
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT27C010L-12JC
Microchip Technology

IC OTP 1MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封装: 32-LCC (J-Lead)
库存4,848
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT27BV512-70RC
Microchip Technology

IC OTP 512KBIT 70NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.342", 8.69mm Width)
  • Supplier Device Package: 28-SOIC
封装: 28-SOIC (0.342", 8.69mm Width)
库存2,384
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
70ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
28-SOIC (0.342", 8.69mm Width)
28-SOIC
AT27BV020-90JC
Microchip Technology

IC OTP 2MBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封装: 32-LCC (J-Lead)
库存4,000
EPROM
EPROM - OTP
2Mb (256K x 8)
Parallel
-
-
90ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70V3599S133BC8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
封装: 256-LBGA
库存6,992
SRAM
SRAM - Dual Port, Synchronous
4.5Mb (128K x 36)
Parallel
133MHz
-
4.2ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
7130SA100CB
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 100NS SB48

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 48-DIP (0.600", 15.24mm)
  • Supplier Device Package: 48-SIDE BRAZED
封装: 48-DIP (0.600", 15.24mm)
库存6,544
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
48-DIP (0.600", 15.24mm)
48-SIDE BRAZED
7132LA25J
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
封装: 52-LCC (J-Lead)
库存3,104
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
7140LA55PF
IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
封装: 64-LQFP
库存2,544
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
MT46V16M16CY-5B AIT:M TR
Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (8x12.5)
封装: 60-TFBGA
库存5,632
DRAM
SDRAM - DDR
256Mb (16M x 16)
Parallel
200MHz
15ns
700ps
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-FBGA (8x12.5)
hot AS7C31026C-12JIN
Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封装: 44-BSOJ (0.400", 10.16mm Width)
库存13,104
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
hot 25LC020A-I/P
Microchip Technology

IC EEPROM 2KBIT 10MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封装: 8-DIP (0.300", 7.62mm)
库存9,180
EEPROM
EEPROM
2Kb (256 x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
25LC010A-I/MS
Microchip Technology

IC EEPROM 1KBIT 10MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存4,800
EEPROM
EEPROM
1Kb (128 x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot TC58NVG1S3HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封装: 48-TFSOP (0.724", 18.40mm Width)
库存16,932
EEPROM
EEPROM - NAND
2Gb (256M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
CY15B004Q-SXE
Cypress Semiconductor Corp

IC FRAM MEM SER 4KBIT 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 16MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存10,128
FRAM
FRAM (Ferroelectric RAM)
4Kb (512 x 8)
SPI
16MHz
-
-
3 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
M95512-DFMC6TG
STMicroelectronics

IC EEPROM 512KBIT 5MHZ 8UFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 16MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UFDFPN (2x3)
封装: 8-UFDFN Exposed Pad
库存39,618
EEPROM
EEPROM
512Kb (64K x 8)
SPI
16MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UFDFPN (2x3)
MT53D384M32D2DS-053 AAT:C
Micron Technology Inc.

IC DRAM 12G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,488
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1866MHz
-
-
1.1V
-40°C ~ 105°C (TA)
-
-
-
MT44K16M36RB-093F:B
Micron Technology Inc.

IC DRAM 576M PARALLEL 1067MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (16M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,800
DRAM
DRAM
576Mb (16M x 36)
Parallel
1067MHz
-
7.5ns
1.28 V ~ 1.42 V
0°C ~ 95°C (TC)
-
-
-
CY62136VLL-55BAI
Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 48FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (7x7)
封装: -
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SRAM
SRAM - Asynchronous
2Mbit
Parallel
-
55ns
55 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (7x7)
MB85RC64VPNF-G-JNE1
Fujitsu Semiconductor Memory Solution

64KBIT FRAM WITH I2C SERIAL INTE

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 64Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 550 ns
  • Voltage - Supply: 3V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
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FRAM
FRAM (Ferroelectric RAM)
64Kbit
I2C
1 MHz
-
550 ns
3V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
R1LP5256ESP-5SI-B1
Renesas Electronics Corporation

IC SRAM 256KBIT PARALLEL 28SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.330", 8.40mm Width)
  • Supplier Device Package: 28-SOP
封装: -
库存3,918
SRAM
SRAM
256Kbit
Parallel
-
55ns
55 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
28-SOIC (0.330", 8.40mm Width)
28-SOP
IS42S32400J-6TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 86TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
封装: -
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DRAM
SDRAM
128Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II